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    IC 5201/019/05 SOC5551SW Search Results

    IC 5201/019/05 SOC5551SW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 5201/019/05 SOC5551SW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original
    PDF 2N5551HR 2N5551HR

    2N5551UB

    Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original
    PDF 2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1

    2n5551 smd

    Abstract: 2N5551HR
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original
    PDF 2N5551HR 2N5551HR 2n5551 smd

    2N5551UB

    Abstract: package LCC-3
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original
    PDF 2N5551HR 2N5551HR 2N5551UB package LCC-3