IC 933 BD Search Results

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

bdw 93

Contextual Info: NPN SILICON POWER DARLINGTON BDW93 SERIES • 80 W at 25 °C Case Temperature • 12 A Rated Collector Current • Min hpg of 750 @ 5 A /3 V mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted BDW 93 BD W 93A BDW 93B

mallory 150 series

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

L031

Abstract: 1G2D B103 B152 B545
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR ALL C O P Y R IG H T - By 2 P U B L IC A T IO N R IG H T S LOG RESERVED. D IS T G - R E V IS IO N S 4 p LTR D E S C R IP T IO N G2 D SERRATIONS REVISED PER D ATE EC O -1 1-00491 7 INSULATION

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

HN3C14

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.8 -0 .3 Including Two Devices in SM6 Super Mini Type with 6 Leads t-0.2 - EE MAXIMUM RATINGS (Ta = 25°C)

BD136

Abstract: MJD47 MRF20030R
Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

Motorola 946

Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

DBT134

Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

zt158

Abstract: BD 149 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

VA-PC 10

Abstract: rf DIRECT with qpsk modulation AN6494NSA B3255
Contextual Info: Panasonic Mobile Communication AN6494NSA Digital Communication Orthogonal Modulator IC • Overview The AN6494NSA is an orthogonal modulator 1C for dig­ ital cellular telephones. It incorporates a phase shifter and an APC circuit for indirect modulation in the 1.5GHz

Contextual Info: Panasonic Mobile Communication AN6494NSA Digital Communication Orthogonal Modulator 1C • Overview The AN6494NSA is an orthogonal modulator 1C for dig­ ital cellular telephones. It incorporates a phase shifter and an APC circuit for indirect modulation In the 1.5GHz

40107

Abstract: 40107B BM025 hcg resistor
Contextual Info: n n r w u r s fi b U o / H lu o INTEGRATED CIRCUIT s-thohson 07C t I 7=i23a_3j?_npisg5s_5_ hcc/hcfwbi 1 _ 14iC09116 S SEMICONDUCTOR CORP J o '1r9-Z-2.i 7929225 S G DUAL 2-INPUT NAND BUFFER/DRIVER • 32 T IM E S S T A N D A R D B - S E R IE S O U T P U T C U R R E N T D R IV E S IN K IN G C A P A B IL IT Y -136 mA

4069U8

Abstract: 40107B 40107 dc motor 5v 2watt IC 2030 schematic diagram HCF40107 S-3411 s3411
Contextual Info: nnrwur s fi s - t h o h s o n 07C t I 7=i23a_3j?_npisg5s_5_ b U o /H lu o 1 INTEGRATED CIRCUIT hcc/hcfwbi J _ 14iC 09116 S G S SEMICONDUCTOR CORP o '1 r 9 - Z - 2 .i 7929225 DUAL 2-INPUT NAND BUFFER/DRIVER • • • • • • 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DR IVE SINKING C A PAB ILITY -136 mA

diode t25 4 L5

Abstract: celeron 600 mobile MOTHERBOARD CIRCUIT diagram agtl manual mobile 478 SOCKET PIN LAYOUT
Contextual Info: R Mobile Intel Celeron® Processor 0.18µ in Micro-FCBGA and Micro-FCPGA Packages at 933 MHz, 866 MHz, 800A MHz, and 733 MHz Datasheet October 2001 Order Number: 298514-001 ® ® Mobile Intel Celeron Processor (0.18µ) in Micro-FCBGA and Micro-FCPGA Packages

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

RH80536

Abstract: RJ80536 910GM Micro-FCPGA
Contextual Info: R Mobile Intel Celeron® Processor 0.18µ in Micro-FCBGA and Micro-FCPGA Packages at 933 MHz, 866 MHz, 800A MHz, and 733 MHz Datasheet October 2001 Order Number: 298514-001 ® ® Mobile Intel Celeron Processor (0.18µ) in Micro-FCBGA and Micro-FCPGA Packages

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

1583 Series

Abstract: 362d 766d
Contextual Info: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

ci 7445

Abstract: ibm usa 2001 P6 MOTHERBOARD ibm usa 2001 P6 MOTHERBOARD SERVICE MANUAL Ibm 865 MOTHERBOARD pcb CIRCUIT diagram ic 7455
Contextual Info: Advance Information MPC7455EC Rev. 4, 9/2003 MPC7455 RISC Microprocessor Hardware Specifications The MPC7455 and MPC7445 are implementations of the PowerPC microprocessor family of reduced instruction set computer RISC microprocessors. This document is primarily