IC DARLINGTON Search Results

Contextual Info: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel

D40C1

Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
Contextual Info: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

2SD1796

Abstract: relay 12v 3a datasheet FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A

LT 6724

Abstract: MPS6724 MPS6725
Contextual Info: M~6724 M~6725 ONE WAU NPN S!LICON DARLINGTON 1 AMPLIFIER TRANSISTORS . collector-Emitter Breakdown voltage — V BR CES= 40 Vdc (Min) @ Ic = 1.0 mAdc MPS6724 50 Vdc (Min) @ Ic = 1.0 mAdc MPS6725 o High Current CapabiliW, IC of 1.0 Amp. ‘,!kg ,!: :,$, ,.

Contextual Info: 7 cìtì7Q7b GG1S0SÔ 5TM O rdering num ber: EN 535B l SA \ YO LB1274 N0.535B Monolithic Digital IC i 6-Unit, Darlington Transistor Array Circuit structure of this IC is a 6-u nit Darlington transistor array w ith NPN transistors. The IC is ideal for driving

KST14

Abstract: KST63 BC516 equivalent KSP13 BCV27 KST13 MMBT6427 MMBTA13 MMBTA14 NZT7053
Contextual Info: Discrete Small Signal Darlington Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration PZTA14 30 30 10 1.2 20000 - 5 100 1.5 100 0.1 PZTA28 80 80 12 0.8 10000

LB1274

Contextual Info: Ordering number:ENN535C Monolithic Digital IC LB1274 6-Unit, Darlington Transistor Array Overview Package Dimensions Circuit structure of this IC is a 6-unit Darlington transistor array with NPN transistors. The IC is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages when designing circuits

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

2SD2015

Abstract: FM20
Contextual Info: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

Contextual Info: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

BDX53E

Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000

BUB06

Abstract: ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B BDW24C
Contextual Info: Î989963 CENTRAL SEMI C O N D U C T OR bï de I TYPE 61C 00195'^ T-33-29 oocmns a T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = _ NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0

l5109

Abstract: IR3500 IR3500MPBF IR3500MTRPBF IR3505 VR11 VRD11 rectifier circuit board ESR 48 td301
Contextual Info: IR3500 DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500 Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

Contextual Info: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

ZTX705

Abstract: ZTX704 DSA003774
Contextual Info: ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. ZTX705 MAX. MIN. 3K 3K 3K 2K UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition

11n800

Abstract: thyrister speed control of 3 ph I M equivalent transistor bc 649 2d npn smd thermistor ntc 50k
Contextual Info: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

EL 14v 4c

Abstract: IR3500 IR3505 VR11 VRD11 thyrister SCR PIN Bf b9 L5109
Contextual Info: IR3500A DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500A Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system

TD5 THERMISTOR

Abstract: l5109 IR3500 IR3500MPBF IR3500MTRPBF IR3505 VR11 VRD11 thyrister SCR PIN 12v 5a dc dc boost converter
Contextual Info: IR3500 DATA SHEET XPHASE3TM VR11.0 & AMD PVID CONTROL IC DESCRIPTION TM The IR3500 Control IC combined with an xPHASE3 Phase IC provides a full featured and flexible way to implement a complete VR11.0 or AMD PVID power solution. The Control IC provides overall system