MMBT6427 Search Results

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

MMBT6427

Contextual Info: MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead Pb -Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 M AXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol Value Unit Vdc Vdc v CEO 40 C o llecto r-B ase Voltage VC B O 40

Contextual Info: M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage v EBO 12 Vdc *C 500 m Adc Collector Current — Continuous MMBT6427LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB Collector 3

SOD123

Abstract: marking pa sot-363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO

BCV47

Contextual Info: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C

Contextual Info: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel

NPN 300 VOLTS vce POWER TRANSISTOR

Abstract: SMMBT6427LT1G
Contextual Info: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP

Contextual Info: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features_ • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 H : h-A T TOR VIEW Mechanical Data • • • • •

MMBT6427LT1

Abstract: 50K MARKING SOT23
Contextual Info: ON Semiconductort Darlington Transistor MMBT6427LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc IC 500

2N6427

Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14
Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

J-STD-020D

Abstract: MMBT6427 MMBT6427-7-F
Contextual Info: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Lead, Halogen and Antimony Free, RoHS Compliant

MMBT6427

Contextual Info: MMBT6427 v isH A Y NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 -H : h~A TOR VIEW Case: SO T-23, Molded Plastic

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys

MMBT6427

Contextual Info: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-23, Molded Plastic

Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous

Contextual Info: MMBT6427LT1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k

Contextual Info: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: 2N6427 MMBT6427 C E C B TO-92 SOT-23 E B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings*