IC EB 5 Search Results

Contextual Info: A DEGSON P roduct S p e c ific a tio n DEGSON ELECTRONICS CO., LTD. S p e c if ic a t io n M odel 1 Terminal block PCRTK/S-BEN o a (2) End Cover 2-P 3-P 10-P (3) Insertion Bridge (4 ) S e p a r a tin g P la te , th ic k u.ttm m EB 2-8 EB 3-8 EB 10-8 100

Contextual Info: A DEGSON P roduct S p e c ific a tio n DEGSON ELECTRONICS CO., LTD. S p e c if ic a t io n M odel 1 Term inal block PCDK 4 50 D-PCDK 4 50 FBI 10-6 10 EB 2-6 EB 3-6 EB 10-6 100 100 □ (2) End C ove r (3) Fixed Bridge. i o p 2-P 3-P 4-P 10-P (4) Fixed Bridge

Contextual Info: A DEGSON Product S p e c ifica tio n DEGSON ELECTRONICS CO., LTD. S p e c if ic a t io n M odel 1 Term inal b lo ck PC 2.5-RE 50 D-PC 2.5-RE 50 FBRNI 2-5 N FBRNI 3-5 N FBRNI 4-5 N FBRNI 10-5 N EB 2-5 EB 3-5 EB 10-5 10 amd (2) End C over f i t t~i it rri~

Contextual Info: S E M IC O N D U C T O R tm 100350 Low Power Hex D-Latch General Description Features The 100350 contains six D-type latches with true and complement outputs, a pair of common Enables Ea and Eb , and a common Master Reset (MR). A Q output follows its_D input when both Ea and Eb are LOW. When either Ea or Eb

QM100TF-HB

Abstract: QM20TD-H QM20TD-HB QM20KD-HB TX-IA QM30 QM30TB-24 QM30TB-2H QM30TB-2HB QM30TX-H
Contextual Info: 264 - - h ^ i f a - ;U [N P N , a 'i -y v ] I c— 1 A, V eb — 2 V , ft VcBO £ V C EX SUS # ÉPÜVCEX m * V EBO Ic I FM I s (A ) (A ) V i. m ) (A ) (W ) CC) (A ) T .i, Ti (£ 3 ) rc> (V ) % V CE V EB (m A ) ft (V ) (V ) ft * V EB X (V ) (V ) ft /J'

EBN-0550

Abstract: i 7989 ECN125 ECN-0510 step up DC DC 5v converter out 12V ECP-1250 ECN-2425 ECP-1540 EBN-1225 dc/dc converter 5v /power+converter+dc/dc+5/i 7989
Contextual Info: High Efficiency, IC Size Non-Isolated Type DC-DC Converter 20/25/50mA EB Series RoHS Compliance 8pin DIP-IC Size, Non-Isolated Type DC-DC Converter Input: +5V Output: -5V, +12V, -12V, +15V, -15V - High Efficiency Step Up Converter - 8pin DIP-ICSize Ultra Small Size

Contextual Info: A DEGSON Product S p e cification DEGSON ELECTRONICS CO., LTD. Specification 1 Term inal block PC 240 2-P 3-p 10-P (2) Fixed B rid g e SÖBI 00 DD0 EB 2-36/PC EB 3-36/PC 10 10 (4) P ic k -o ff Term inal B lock A (iK 1U-PC 15U/^4U 10 (5) In se rtio n P rofile

Contextual Info: A DEGSON Product S p e c ifica tio n DEGSON ELECTRONICS CO., LTD. S p e c if ic a t io n M odel 1 Fuse Term inal B lock. ¡ Ü ^ e ^ m m * 5* 20 PC 4-HE ISSfISï (2) Fixed B ridge oopooooooo EB 2-8 EB 3-8 AUM AM M (3) In se rtio n Bridge 100 50 10 FRlO-ft

transistor kn3904

Abstract: KN3904 KN3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.

Contextual Info: HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Emitter Voltage ^CEO 140 Collector-Base Voltage ^CBO 6 Emitter-Base Voltage ^EB 50 Collector Current - Continuous Ic 100 - Peak 20 Base Current Ib Total Device Dissipation

2n2907 or similar PNP

Abstract: transistor 2222a to-92 KTN2907 KTN2907A KTN2907 or similar PNP
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KN2907AS

Abstract: KN2907S KN2907S/2907AS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KN3903

Abstract: KN3905
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3903 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : V CE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.

KTN2907AS

Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23
Contextual Info: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM

KN3904

Abstract: KN3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. , @V ce=-30V, V eb=-3V. • Low Saturation Voltage : V CE(sat)=_ 0 .4 V (Max.) @Ic=-50mA, IB=-5mA.

STP5508

Contextual Info: STP5508 HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Em itter Voltage ^CEO 140 Collector-Base Voltage VcBO 6 Emitter-Base Voltage ^EB 50 Collector C u rren t - Continuous Ic 100 - Peak 20 Base C urrent Ib Total Device Dissipation

KN3903S

Abstract: KN3905S
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @ VCe =30V, V eb =3V. • Low Saturation Voltage

2N3906U

Abstract: Scans-00124840
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .

3n108

Abstract: transistor 3N108
Contextual Info: I I 3N108 3N109 3N110 3N111 HIG H V O L T A G E S IL IC O N E P IT A X IA L J U N C T IO N INTEGRATED CHOPPER TRANSISTOR • L O W LEAKAGE • L O W C eb • L O W rEE sat • H IG H V EE & V EB ELECTRICAL DATA ABSOLUTE MAXIMUM RATING _ p a r a m e t e r _

TDA 5890

Abstract: lt 6225 STR 5634 m6845 IR 1838 3v str w 5634 lt 6224 STR 5709 IR 1838 T Pin number MC6846
Contextual Info: U IV IC UM684SE/EA/EB C R T Controller Features No DMA required • Single + 5 volt ±5% power supply ■ Alphanumeric and limited graphics capabilities ■ Fully programmable display (rows, columns, blanking, Pin-compatible with MC6845R Row/column or straight-binary addressing for Video

2n2222 kec

Abstract: 2222a KTN2222 KTN2222A transistor h pn 2222a
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA Max. ; V ce-60V, V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.

EB-1200

Abstract: EB-3110 EB-1111 IC EB 5 EB-3200 EB141
Contextual Info: E-SAN ELECTRONIC CO LTD D sme • 3D37MD2 □□□□□□? 2 ■ ~ / _^ 5 r7^ D C /D C Converter EB Series Features: • 24 Pin IC package • PCB mountable • Economy non-regulated & high stability regulated types available • Thermally conductive encapsulant

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N TELEPHONE: 973 376-2922 (212) 227-0005 FAX-(973) 376-3980 5633 HIGH VOLTAGE-HIGH-POWER NPN SILICON TRANSISTORS "MAXIMUM RATINGS Riling Symbol 2MG633 Unit VCEO 120 Vdc VCB V EB ic 120 Vdc 7,0 Vdc Collector-emitter Voltage

ei-33

Abstract: KN3903 KN3905 EI33
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3905 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x=-50n A M ax. , @ V ce =-3 0 V , V eb = -3 V . • Low Saturation Voltage : V CE(sat)=_ 0 .4 V (M ax.) @Ic=-50mA, IB=-5mA.