IC EB 729 Search Results

130171

Abstract: 292d 11-01-0122 20 Pin Molex Mini-Fit Jr J031 MOLEX 39-00-0038 j104 pin 21-130198-TAB D10116 39-00-0038
Contextual Info: P R O P R IE T A R Y " D A TA : V A dM M D EB t REVISIONS tafSEnBUK DIZCtBlML ic f& ra L p d b T 'v t f l i o i p n r r f lir r f p n Dt lE S IC D B ECO REV DATE APPROVED 258 A PRODUCTION R EL EA SE 3/14/94 RBD 482 A1 CHG PIN 1 LOCATION ON J3 12/21/95 RBD

Westinghouse module

Abstract: kd32 KD32451
Contextual Info: 7294621 P OWEREX 100 Amperes 450 /1 000 Volts INC " bS DE-fl T E T M b S l a 0 D C H 3 0 D f D T-33-35 M odu,ls DARLINGTON Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150 + .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max 3.660+.020

KS621K3010

Abstract: powerex ks62 14B21
Contextual Info: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3

D60T1520

Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200
Contextual Info: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE |? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:

Thomson-CSF amplifier

Abstract: CO-422 118-136-MHz
Contextual Info: S G S-TH O M SO N Ü4C D | □ □ □ G IG I 7 - 3$ - *7 ? S O L ID STATE M IC R O W A V E S D 1 222-5 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661 -7299 V H F C O M M U N I C A T I O N S T R A N S IS T O R

K723

Abstract: KT234520 transistor 236 bipolar power transistor vce 600 volt
Contextual Info: 7294621 POWEREX INC I O H E R E _ D E I 7 2 i MbSI 0D0SD3b fl D KT234520 K Powemi, Inc., Hlllla Street, ibungwood, Pennsylvania 15697 412 925-7272 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

SD1301

Abstract: THOMSON-CSF MICROWAVE TRANSISTORS
Contextual Info: Q5C D I 7 ^ 2 3 7 S G S-THOM SON DGGGSOQ M |~ T W / - AT" SOLID STATE MICROWAVE SD1300 SD1301 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie, P A 18936 • 215 362-8500 ■ TWX 510-661-7299 NPN SMALL SIGNAL TRANSISTOR .357 .353 DESCRIPTION: This line o f NPN silicon transistors are designed primarily for applica­

westinghouse DIODES

Abstract: WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor
Contextual Info: 7294621 POWEREX INC PE | 7BT4b5:L □ 0 □ 0 •=]15 4 Dual Darlington TRANSISTOR Modules Dim A B C D E F Q H J Inches. 2.76 1.06 2.36 ±0.01 2.17 1.02 .59 .43 .181 .315 |~~5 _ qf T-33-35 20 Amperes 450 Volts Millimeters 70 27 60±0.3 5.5 26 15 11 4.6 8

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2EC!"38  4C6C#$%&'9 %  %

10A 600 VOLT DIODE

Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Contextual Info: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes

Westinghouse diode

Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
Contextual Info: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4

QM100TX1HB

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE 1 INSULATED TYPE ! I QMÍ00TX1-HB • lc • • • • Collector current. 1O0A V cex Collector-emitter voltage.6 00V hre DC current gain. 750

RCDL56ACF

Abstract: rcvdl56acfw RCVDL56ACF/SP schematic circuit board satellite modem data circuit schematics satellite connector 4 MHz crystal KDS 2K SDS Relay 30338 RCVDL56ACFW/SP KDS 28.224 MHZ crystal
Contextual Info: RCVDL56ACF/SVD, RCV56ACF/SVD, and RCV336ACF/SVD Modems Designer's Guide Preliminary Order No. 1105 Rev. 1, March 6, 1997 RCVDL56ACF/SVD, RCV56ACF/SVD, and RCV336ACF/SVD Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no

Contextual Info: SILICON NPN EPITAXIAL TYPE RN1307RN1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 I.25±0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

Darlington 30A

Abstract: KD221K0310 kd2245
Contextual Info: 7294621 POWEREX INC 3 0 Amperes 4 5 0 /1 0 0 0 Volts ^2 D E Í 7 S T M b 2 1 D G D m i ñ 0 |~~ q \ T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+.020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max

data circuit schematics satellite connector

Abstract: 30338 RCDL56ACF HB 8406 rc336 WCLA SDS Relay r6765 LM386 BLOCK DIAGRAM kds 97 45
Contextual Info: RCVDL56ACFL/SP, RCV56ACFL/SP, and RCV336ACFL/SP Modem Device Set Designer's Guide Preliminary Order No. 1121 May 15, 1997 RCVDL56ACFL/SP, RCV56ACFL/SP, and RCV336ACFL/SP Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no

Contextual Info: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier

2SA984

Abstract: 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F
Contextual Info: Ordering number: EN465G 2SA984/2SC2274 N0.465G PNP/NPN Epitaxial Planar Silicon Transistors SAXYO AF Power Amp Applications Features • High breakdown voltage Vceo—50V . • High current (Ic = 500mA). • Low saturation voltage. ( ) : 2SA984 A bsolute Maximum R atings at T a = 25°C

Contextual Info: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5

R1SG

Abstract: D60T454010 D62T454010 D60T4050 transistor 667 7A young D60T4040 D60T4060 D62T MLLB-1
Contextual Info: 729 4 82 1 P Ô v r ë R E X - l M c ““ ^ mmuEx ' • ~D D60T/D62T_ 40 D60T/D62T_5Q D60T/D62T_ 60 ív' Powerex, Inc., H IIIÌ3 S treet, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching Transistors 40-50-60 Amperes 400-500Vòlts

ks52

Abstract: TNU 175 KS524505 A60e KS221K0510
Contextual Info: 729* £ ? i PUW EREX IN C ~ ^ D lF | T S T M b Z l OOODÖTS 5 Single Darlington T R A N S IS T O R M odules Dim A B C D E F G H J K L Inches 2.09 Max 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± .0 0 8 .216 Dia Millimeters 53 Max 36 22 5.5 3 5 7 9 8 43.3 ± .2

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

CA3252

Contextual Info: CA3252 S E M I C O N D U C T O R Quad Gated Non-Inverting Power Driver March 1998 Features Description • Four 600mA Non-Inverting Power Output Drivers The CA3252 is used to interface low-level logic to high current loads. Each Power Driver has four inverting switches

243P

Contextual Info: HARRIS S E M I C O N D U C T O R CD74FCT543T, CD74FCT544T, CD74FCT2543T Ê '* w ^ ' ,7 # '* w ' ^ ' ,7 Fast CMOS Latched Transceivers Decem ber 1996 Description Features • Advanced 0.8 micron CMOS Technology The d evices a re 8 -bit w id e non-inverting