IC EPROM 32K X 16 Search Results

Contextual Info: S E M IC O N D U C T O R January 1998 tm FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM27C256 is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS pro­ cess technology enabling it to operate at speeds as fast as

Contextual Info: January 1998 S E M IC O N D U C T O R FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM. II is m anufactured using an advanced CM OS pro­ cess technology enabling it to operate at speeds as la s t as

27C080

Abstract: EPROM 27c010 AT 27C040 die 27C256 General Semiconductor 27C256-70 27C256-45 FM27C256 NM27C256 27C512 UV 27c512 smd
Contextual Info: S E M IC O N D U C T O R January 1998 tm FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM . It is m anufactured using an advanced C M OS pro­ cess technology enabling it to operate at speeds as fast as

PROGRAM 27128

Abstract: 27256
Contextual Info: NMC27C32B F jA IR G H IL D s e m ic o n d u c t o r NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description Features The N M C27C32B is a 32k UV erasable and ele ctrica lly reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power

Contextual Info: 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

CP1202

Contextual Info: 27HC256 M ic ro c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS • High speed performance — 55ns access time available 256K bit (electrically) Programmable Read Only Memory. CMOS technology for low power consumption

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

Contextual Info: 27LV256 M ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance - 200 ns access time available at 3.0V • CMOS Technology for low power consumption - 8 mAActive current at 3.0V

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available

Contextual Info: $ 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM PACKAGE TYPE FEATURES TSOP • High speed performance .2 8 / ' 27 / 26 25 24 23 22 - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current

Contextual Info: $ M ic r o c h ip 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM PACKAGE TYPES FEATURES • Wide voltage range 3.0V to 5.5V PDIP • High speed performance - 200 ns access time available at 3.0V • CMOS Technology for low power consumption - 8 mA Active current at 3.0V

Contextual Info: 27LV256 M ic r o c h ip 256K 32K x 8 Low Voltage CMOS EPROM FEATURES PIN CONFIGURATIONS • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 8 mA Active current at 3.0V

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance - 90 ns access tim e available • CMOS Technology for low pow er consumption - 20 mA Active current - 100 nA S tandby current • Factory program m ing available

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES • • • • • • • PIN CONFIGURATIONS High speed performance — 55 ns access time available CMOS technology for low power consumption — 55m A active current — 100 nA standby current (low power option)

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High-Speed CMOS EPROM FEATURES PACKAGE TYPE DIP • High speed performance - 55 ns access time available • CMOS Technology for low power consumption - 55 mA Active current Vpp E • 1 A12C 2 A7C 3 A6 C 4 A5C 5 A4 Z 6

A327A

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High-Speed CMOS EPROM PACKAGE TYPE FEATURES • High speed performance DIP - 55 ns access time available VppQ • 1 • CMOS Technology for low power consumption 2 8 H V cc 2 27 D A 1 4 A7 C 3 26 ] A 1 3 A12C A6 C 4

Contextual Info: M 27LV256 ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPES PDIP • Wide voltage range 3.0V to 5.5V Vpp C • 1 A12 C 2 • High speed performance 26 H Vcc 27 DA14 26 JA 1 3 25 HAS A7 E 3 - 200 ns access time available at 3.0V A6 C 4

Contextual Info: SGS-1H0MS0N ¡[L IM fflO ig S M 87C 257 ADDRESS LATCHED CMOS 256K 32K x 8 UV EPROM and OTP ROM • INTEGRATED ADD RESS LATCH ■ VERY FAST ACC ESS TIM E: 100ns ■ C O M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “C M O S” CONSUMPTIO N:

DA1020

Abstract: tce 1994 a13ja
Contextual Info: $ 27HC256 M ic r o c h ip 256K 32K x 8 High Speed CMOS EPROM PIN C O N F IG U R A T IO N S FEATURES • • • • • • • High speed performance — 55 ns access time available CMOS technology for low power consumption — 55 mA active current — 100 nA standby current (low power option)

Contextual Info: 27LV256 M ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPE • W ide voltage range 3.0V to 5.5V PDIP V pp Q • 1 • High speed perform ance A 12C 2 A 7C 3 A 6C 4 - 200 ns access tim e available at 3.0V • CMOS Technology tor low power consum ption

Contextual Info: M 27LV256 ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPE • Wide voltage range 3.0V to 5.5V P D IP Vpp C »1 A12 C 2 A7C 3 • High speed performance - 200 ns access time available at 3.0V 26 J A13 A 6C 4 ASE 5 • CMOS Technology for low power consumption

m27c2568

Abstract: SGS M27C256B M27C256B M27C2568-15 PDIP28 PLCC32
Contextual Info: r Z J SGS-THOMSON ^7 # M27C256B R iflD 0 ® IIL ll© in S ® E !lD g i CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACC ESS TIM E: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “C M O S” CONSUMPTIO N:

Contextual Info: M ic r o c h ip 27LV256 256K 32K x 8 Low Voltage CMOS EPROM FEATURES PIN CONFIGURATIONS PDIP 17 3 05 16 3 0 4 15 3 0 3 S í- Î 3 8 < < > Z > 5j!S_ / 5“ 6* 7~ 8* 9* » 26 27 26 A6 A5 A4 A3 A2 A1 AO M NC 12 0 0 13 PLC C o o 1 i 8 iS » 23 a ¡ó. s lía 1

fairchild 27C64

Abstract: eprom 27c64 PROGRAMMER CIRCUIT eprom 27C16 J24AQ NMC27C32B NMC27C32BQ NMC27C32BQ150 NMC27C32BQ200 NMC27C32BQE200 2764 memory chip
Contextual Info: E M I C O N D U C T D R tm NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description The NM C27C32B is a 32k UV Features e r a s a b le and e le c tr ic a lly • L o w C M O S p o w e r c o n s u m p tio n re p ro g ra m m a b le C M O S E P R O M , id ea lly s u ite d fo r a p p lic atio n s