IC M 224 TO 220 Search Results

VC10F 270

Contextual Info: Series VC Material Specilications C oating C onform al vitreous enam el Core C eram ic Term inals T inned leads, solderable to M IL -R -26 standards W eight V C3D VC5E VC10F 3 w att .032 oz. .896 gm s. 5 w att .096 oz. 2.69 gms. 10 w att .224 oz. 6.27 gms.

IC M 224

Abstract: ASE SiP
Contextual Info: in»«« clcklfOflik 2 3 A ttachable h eatsink Rth [K/W] art. no. FK 220 SA 220 25 TO 220 surface: black anodised Rth [K/W] art. no. FK 224 . P SIP Rth [K/W] art. no. FK FK FK FK 224 224 224 224 . 218 . 218 . 220 . 220 P SIP H 1 2 1 2 ple ase indicate:

BJ3159AC

Abstract: raychem 10602 wire TAI-173
Contextual Info: m m u m o rig in al DASH NO -201 -202 -203 -204 -205 -206 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -218 -219 -220 -221 -222 -223 -224 -225 CABLES ACCOMMOOATEO Ml 1 / 176-00002 TWC-78-1 TWC-124-1A 10602,RAYCHEM TWAC-78-1F2 782600130,RAYCHEM 83310 BELDEN

lc 5013

Contextual Info: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • HIGH SPEED SWITCHING : tf = 0.1us Typ • WIDE SOA ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Rating Unit VcBO 800 V CEO 500

Contextual Info: 6 TH IS D R A W IN G IS U N P U B L I S H E D . C O P Y R IG H T RELEASED B Y TYCO E L E C T R O N IC S C O R P O R A T IO N , FOR 5 4 2 4 P U B L IC A T IO N A LL R IG H TS RESERVED. 1 RAISED CAVITY IDENTIFICATION NUMBER LOC DIST D DO R E V IS IO N S P

74hc294

Abstract: SN74HC294 C294 5-12FR
Contextual Info: HIGH-SPEED CM OS LOGIC TYPES SN54HC292, SN54HC294, SN74HC292. SN74HC294 PROGRAMMABLE FREQUENCY DIVIDERS/DIGIT AL TIMERS D 2 80 4, M A R C H 1984 • Count Divider Chain • Digitally Programmable from 22 to 231 for 'H C2 9 2 or 215 for HC294 SN 5 4 H C 2 9 2 . . . J P A C K A G E

IRL640

Contextual Info: IRL640 A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

IRL640A

Contextual Info: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

74LS 219

Contextual Info: TYPES SN54LS292, SN54LS294, SN74LS292, SN74LS294 PROGRAMMABLE FREQUENCY DIVIDERS/DIGITAL TIMERS D 2 6 2 8 , J A N U A R Y 1 9 8 1 -R E V iS E D D E C E M B E R 1983 SN54LS292 . J OR W PACKAGE J OR N PACKAGE SN74LS292 • * OP VIEW Count Divider Chain Digitally Programmable from 22 to 2n

Contextual Info: TO SHIBA TC74HC7292AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT Tr7AHr77Q7AP m M m m m m/F m ma g SILICON MONOLITHIC TC7Ú. UC7 7 QJ A P m a m m m m m ma PROGRMMABLE DIVIDER/TIM ER The TC74HC7292A is a high speed CMOS PROGRAMMABLE DIVIDER / TIMER fabricated with silicon gate C2MOS

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR D E S C R IP T IO N 0,040 + ,003 [1,02 + 0,08]

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR 0,040 + ,003 [1,02 + 0,08] TYP D E S C R IP T IO N

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC DF R E S ER VE D . -2 1 2 3 SEE DETAIL K 0,040 + ,003 [1,02 + 0,08] TYP R E V IS IO N S D IS T AO LTR D E S C R IP T IO N

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T N /A By FO R P U B L IC A T IO N RIG HTS 5 6 4 3 2 , N /A LOC -2 1 2 3 SEE DETAIL K R E V IS IO N S D IS T DF R E S ER VE D . AO LTR 0,030 + ,003 [ , 7 6 + 0,08] TYP D E S C R IP T IO N

SM 933

Contextual Info: M U LTILA Y E R CERAM IC CHIP CAPACITORS • INTRODUCTION The Multilayer Ceram ic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceram ic dielectric materials and firing into a concrete monolithic body, then com pleted by

Belden 1670

Abstract: BL1242 BL-1242 til 216 red B-3310 14949 TAI-206 178-00002
Contextual Info: RED INDICATES ORIGINAL DWG pat* UC DASH NO -201 -202 -203 -204 -205 -205 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -21B -219 -220 -221 -222 -223 -224 -225 TABLE 1 CABLES ASSEMBLE ACCOMMODATED PER M17/176-00002 TWC-7B-1 TWC-124-1A 10502, RAYCHEM

fusible Am

Abstract: oma0207
Contextual Info: EIN UNTERNEHMEN VON METAL FILM Fusible type NMA.SÎ D R i^ p R IC " F e a tu re s 9 fusible function at constant current load Ri> 6 i2 for R n < 10 H; Ri > 1 Q for RN > 10 Q 4fcU» • high positive T.C. • defined cut-off behaviour • current limit Style

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

74hc7294

Abstract: 74HC7292 ic 7294 HC7294 74hc729 C7292 74*7292 PHL 218 74h 132 2416H
Contextual Info: SGS-THOMSON M 54/74H C 7292 M 54/74H C 7294 PROGRAMMABLE DIVIDER/TIMER • LOW POWER DISSIPATION IC C = 4 MAX. at TA = 25°C ■ H IG H N O IS E IM M U N IT Y V n ih = V n il = 28»/o V CC (M IN .) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

P140

Abstract: uPD78F1500 VT-200
Contextual Info: 78K0R/Lx3 24-Feb-09 Evaluation of a Low Frequency Clock Oscillation Circuit VT-200-FL 6.0pF uPD78F1505GC-16BT [LQFP 14x14 0.5mm pitch] Measurement conditions : 3.0V New Model VT-200-FL Vdd=1.8 to 5.5V :VT-200-FL IC Frequency :Fo=32.768kHz Frequency tolerance

Contextual Info: TOSHIBA LOGIC/MEMORY IME 0 | l O T O M S DQlai.32 1 | i _ TC74HC7292P TC74HC7294P TC74HC7292P TC74HC7294P PROGRAMMABLE DIVIDER/TIMER PROGRAMMABLE DIVIDER/TIMER ^ T - 4 ^ - z V 3 S The TC74HC7292 and TC74HC7294 are high speed CMOS PROGRAMMABLE DIVIDER/TIMER

BD2428

Abstract: HEP transistors
Contextual Info: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations Limited, UK JU N E 1973 - REVISED M ARCH 1997 D esigned for Complementary U m with the BD241 Series T 0-220 PA C KA G E TOP VIEW 40 W at 25°C C ase Temperature

3483-1R5M

Abstract: 3483-3R3M
Contextual Info: Series 3483 & S3483 Surface Mount Power Inductors j SERIES 3483 - UNSHIELDED mi 3483-1 ROM 3483-1R5M 3483-2R2M 3483-3R3M 3483-4R7M 3483-6R8M 3483-100M 3483-120M 3483-150M 3483-180M 3483-220M 3483-270M 3483-330M 3483-390M 3483-470M 3483-560M 3483-680M 3483-820M

BLV31

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV31 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: 45 -^ -C BLV31 is Designed for use in VHF amplifiers r~v B