IRL640 Search Results
IRL640 Price and Stock
Vishay Intertechnologies IRL640STRLPBFLOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRL640STRLPBF) |
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IRL640STRLPBF | Reel | 800 | 12 Weeks | 800 |
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IRL640STRLPBF | 993 |
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IRL640STRLPBF | 4,800 | 800 |
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IRL640STRLPBF | 4,800 | 25 Weeks | 800 |
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IRL640STRLPBF | Reel | 800 | 800 |
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IRL640STRLPBF | Reel | 1,600 | 800 |
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IRL640STRLPBF | 796 | 1 |
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IRL640STRLPBF | 1,600 |
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IRL640STRLPBF | 13 Weeks | 800 |
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Vishay Intertechnologies IRL640PBF-BE3N-CHANNEL 200V - Rail/Tube (Alt: IRL640PBF-BE3) |
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IRL640PBF-BE3 | Tube | 12 Weeks | 1,000 |
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IRL640PBF-BE3 | 7,086 |
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IRL640PBF-BE3 | Tube | 1,000 |
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Vishay Intertechnologies IRL640SPBFPower MOSFET, N Channel, 200 V, 17 A, 0.18 ohm, TO-263 (D2PAK), Surface Mount - Rail/Tube (Alt: IRL640SPBF) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRL640SPBF | Tube | 12 Weeks | 1,000 |
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IRL640SPBF | 5,007 |
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IRL640SPBF | 1,035 | 9 |
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IRL640SPBF | 1,035 | 25 Weeks | 1 |
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IRL640SPBF | Bulk | 633 | 1 |
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IRL640SPBF | Tube | 600 | 50 |
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IRL640SPBF | 122 | 1 |
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IRL640SPBF | 247 |
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IRL640SPBF | 50 | 13 Weeks | 50 |
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Vishay Intertechnologies IRL640STRRPBFLOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRL640STRRPBF) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRL640STRRPBF | Reel | 12 Weeks | 800 |
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IRL640STRRPBF | 1,445 |
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IRL640STRRPBF | Reel | 800 |
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IRL640STRRPBF | 13 Weeks | 800 |
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Vishay Intertechnologies IRL640SLOGIC MOSFET N-CHANNEL 200V - Bulk (Alt: IRL640S) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRL640S | Bulk | 111 Weeks | 1,000 |
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IRL640 Datasheets (34)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL640 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 |
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Advanced Power MOSFET | Scan | 153.02KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 | International Rectifier | N-CHANNEL HEXFET Power MOSFET | Scan | 252.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 | International Rectifier | HEXFET Power MOSFET | Scan | 252.69KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 17A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 | Unknown | FET Data Book | Scan | 46.6KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640 |
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N-Channel Logic Level MOSFETS | Scan | 253.68KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640A |
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Advanced Power MOSFET | Original | 229.45KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640A |
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Advanced Power MOSFET | Scan | 153.33KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640L | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-262 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640L | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRL640PBF | International Rectifier | 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | Scan | 252.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640S |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640S | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 17A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640S |
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Advanced Power MOSFET | Scan | 154.29KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640S | International Rectifier | N-CHANNEL HEXFET Power MOSFET | Scan | 268.78KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640S | International Rectifier | HEXFET Power MOSFET | Scan | 268.78KB | 8 |
IRL640 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRL640
Abstract: SiHL640 SiHL640-E3
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IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL640 SiHL640-E3 | |
Contextual Info: IRL640_RC, SiHL640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRL640 SiHL640 AN609, CONFIGURATIp-10 4514m 1503m 9659m 8331m | |
IRL640S
Abstract: SMD-220 S10 SMD MARKING
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IRL640S, SiHL640S SMD-220 2002/95/EC 11-Mar-11 IRL640S SMD-220 S10 SMD MARKING | |
Contextual Info: PD- 95585 IRL640SPbF Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306 |
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IRL640SPbF 08-Mar-07 | |
SiHL640S
Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
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IRL640S, SiHL640S SMD-220 SMD-220 18-Jul-08 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c | |
IRL640
Abstract: IRL640 equivalent SiHL640 SiHL640-E3
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IRL640, SiHL640 O-220 O-220 18-Jul-08 IRL640 IRL640 equivalent SiHL640-E3 | |
Contextual Info: IRL640S A d v a n c e d Power MOSFET FEATURES B V dss = 200 V ^ D S o n = 0 .1 8 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature |
OCR Scan |
IRL640S | |
Contextual Info: PD-9.1089 International k ?r Rectifier IRL640 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling • Simple Drive Requirements |
OCR Scan |
IRL640 O-220 | |
Contextual Info: PD - 94964 IRL640PbF • Lead-Free 1 IRL640PbF 2 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) |
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IRL640PbF O-220AB O-220AB. | |
Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated |
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IRL640, SiHL640 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
R/1RL640AContextual Info: IRL640A A d van ced Power MOSFET FEATURES BV,DSS = 200 V • ■ ■ ■ ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max. @ VOS= 200V |
OCR Scan |
IRL640A O-220 1RL640A R/1RL640A | |
Contextual Info: PD - 94964 IRL640PbF • Lead-Free www.irf.com 1 01/30/04 IRL640PbF 2 www.irf.com IRL640PbF www.irf.com 3 IRL640PbF 4 www.irf.com IRL640PbF www.irf.com 5 IRL640PbF 6 www.irf.com IRL640PbF www.irf.com 7 IRL640PbF TO-220AB Package Outline Dimensions are shown in millimeters inches |
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IRL640PbF O-220AB O-220AB. | |
Contextual Info: PD- 95585 IRL640SPbF Lead-Free Document Number: 91306 07/20/04 www.vishay.com 1 IRL640SPbF Document Number: 91306 www.vishay.com 2 IRL640SPbF Document Number: 91306 www.vishay.com 3 IRL640SPbF Document Number: 91306 www.vishay.com 4 IRL640SPbF Document Number: 91306 |
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IRL640SPbF 12-Mar-07 | |
R/IRL640AContextual Info: IRL640A N-Channel Logic Level A-FET 200 V, 18 A, 180 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize |
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IRL640A R/IRL640A | |
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IRL640AContextual Info: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area |
OCR Scan |
IRL640A IRL640A | |
IRL640Contextual Info: IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.18 Available Qg (Max.) (nC) 66 • Logic-Level Gate Drive Qgs (nC) 9.0 • RDS(on) Specified at VGS = 4 V and 5 V |
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IRL640, SiHL640 O-220 O-220 12-Mar-07 IRL640 | |
AN609
Abstract: IRL640S
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IRL640S SiHL640S AN609, 8292m 0633m 4369m 5016m 2686m 2196m 8257m AN609 | |
Contextual Info: PD - 94964 IRL640PbF • Lead-Free Document Number: 91305 01/30/04 www.vishay.com 1 IRL640PbF Document Number: 91305 www.vishay.com 2 IRL640PbF Document Number: 91305 www.vishay.com 3 IRL640PbF Document Number: 91305 www.vishay.com 4 IRL640PbF Document Number: 91305 |
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IRL640PbF O-220AB 12-Mar-07 | |
Contextual Info: $GYDQFHG 3RZHU 026 7 IRL640 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.18Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area |
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IRL640 O-220 | |
Contextual Info: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature |
OCR Scan |
IRL640S | |
IRL640
Abstract: IRF1010 IRL640A 91089
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OCR Scan |
IRL640 O-220 T0-220 200Vas I0B83) D-6380 IRL640 IRF1010 IRL640A 91089 | |
irfl640
Abstract: IRL640 part marking ab SiHL640 SiHL640-E3
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IRL640, SiHL640 O-220 O-220 18-Jul-08 irfl640 IRL640 part marking ab SiHL640-E3 | |
Contextual Info: PD- 95585 IRL640SPbF Lead-Free www.irf.com 1 07/20/04 IRL640SPbF 2 www.irf.com IRL640SPbF www.irf.com 3 IRL640SPbF 4 www.irf.com IRL640SPbF www.irf.com 5 IRL640SPbF 6 www.irf.com IRL640SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations |
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IRL640SPbF EIA-418. | |
Contextual Info: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area |
OCR Scan |
IRL640A T0-220 IRLW/I640A 71b4142 003b32fl 3b321 00M1N 71b414E DD3b33D |