IC OZ 9936 Search Results
IC OZ 9936 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 9936/BCA |
|
9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
|
|
|
| D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
|
||
| D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
|
||
| SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
|
||
| SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
|
IC OZ 9936 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IC OZ 9936
Abstract: to262 pcb footprint IRG4BH20K-L AN-994
|
Original |
IRG4BH20K-L O-262 den252-7105 IC OZ 9936 to262 pcb footprint IRG4BH20K-L AN-994 | |
|
Contextual Info: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed |
Original |
IRG4BH20K-L O-262 | |
irg4bc40
Abstract: IRG4BC40W
|
Original |
1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W | |
IRG4BC40W
Abstract: irg4bc40 354 GE
|
Original |
1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE | |
|
Contextual Info: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies |
Original |
1654A IRG4BC40W | |
IRG4BC10SContextual Info: PD - 91786A IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in |
Original |
1786A IRG4BC10S O-220AB O-220AB VG252-7105 IRG4BC10S | |
IRG4BC20U
Abstract: IRG4BC20
|
Original |
91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20 | |
IRG4BC10KContextual Info: PD - 91733A IRG4BC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency |
Original |
1733A IRG4BC10K O-220AB O-220AB Uni252-7105 IRG4BC10K | |
IRG4BC10KContextual Info: PD - 91733A IRG4BC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency |
Original |
1733A IRG4BC10K O-220AB O-220AB IRG4BC10K | |
irg4bc30sContextual Info: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1593A IRG4BC30S O-220AB O-220AB irg4bc30s | |
IRG4BC30SContextual Info: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1593A IRG4BC30S O-220AB O-220AB VG252-7105 IRG4BC30S | |
|
Contextual Info: PD - 91593A IRG4BC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1593A IRG4BC30S O-220AB O-220AB | |
IRG4BC40KContextual Info: PD - 91592B IRG4BC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency |
Original |
91592B IRG4BC40K O-247AC O-220AB IRG4BC40K | |
IC OZ 9936
Abstract: IRG4BC40K
|
Original |
91592B IRG4BC40K O-247AC O-220AB Collector-to-252-7105 IC OZ 9936 IRG4BC40K | |
|
|
|||
IRG4BC20K
Abstract: IRGBC20K IRGBC20M
|
Original |
1600A IRG4BC20K IRG4BC20K IRGBC20K IRGBC20M | |
|
Contextual Info: PD - 91592B IRG4BC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency |
Original |
91592B IRG4BC40K O-247AC O-220AB | |
IRG4BC20S
Abstract: IRG4BC20
|
Original |
1597A IRG4BC20S O-220AB O-220AB IRG4BC20S IRG4BC20 | |
IRG4PC30SContextual Info: PD - 91586A IRG4PC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1586A IRG4PC30S O-247AC O-247AC IRG4PC30S | |
IRG4PH50SContextual Info: PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
-91712A IRG4PH50S O-247AC O-247AC IL252-7105 IRG4PH50S | |
|
Contextual Info: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1602A IRG4BC20F O-220AB O-220AB | |
|
Contextual Info: PD - 91586A IRG4PC30S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1586A IRG4PC30S O-247AC O-247AC | |
|
Contextual Info: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1597A IRG4BC20S O-220AB O-220AB | |
IRG4PC50SContextual Info: PD - 91581A IRG4PC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
1581A IRG4PC50S O-247AC O-247AC ILM252-7105 IRG4PC50S | |
IRG4BC20UContextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91448D IRG4BC20U O-220AB O-220AB IRG4BC20U | |