IRG4BC40 Search Results
IRG4BC40 Datasheets (44)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC40 | International Rectifier | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V | Original | 168.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40F | International Rectifier | Fast Speed IGBT | Original | 168.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40F | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40F with Standard Packaging | Original | 172.55KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40F | International Rectifier | Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR | Original | 261.89KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40FPBF | International Rectifier | Original | 168.35KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40FPBF | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40F with Lead Free Packaging | Original | 172.55KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40K | International Rectifier | IGBT INSULATED GATE BIPOLAR TRANSISTOR | Original | 169.01KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40K | International Rectifier | 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40K with Standard Packaging | Original | 158.65KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40K | International Rectifier | Insulated Gate Bipolar Transistor | Original | 155.67KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40KPBF | International Rectifier | 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40K with Lead Free Packaging | Original | 158.65KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40KPBF | International Rectifier | Original | 155.66KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40S | International Rectifier | 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC40S with Standard Packaging | Original | 161.81KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40S | International Rectifier | Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR | Original | 259.97KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40S | International Rectifier | Insulated Gate Bipolar Transistor | Original | 157.62KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRG4BC40SD | International Rectifier | Fit Rate / Equivalent Device Hours | Original | 94.4KB | 35 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40SPBF | International Rectifier | 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC40S with Lead Free Packaging | Original | 161.81KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40SPBF | International Rectifier | Original | 157.62KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40U | International Rectifier | IGBT | Original | 170.32KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40U | International Rectifier | 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40U with Standard Packaging | Original | 174.51KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC40U | International Rectifier | UltraFast Speed IGBT | Original | 266.43KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG4BC40 Price and Stock
Rochester Electronics LLC IRG4BC40KPBFIRG4BC40 - DISCRETE IGBT WITHOUT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC40KPBF | Bulk | 9,723 | 150 |
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Buy Now | |||||
Rochester Electronics LLC IRG4BC40UPBFIGBT 600V 40A TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC40UPBF | Bulk | 151 | 151 |
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Rochester Electronics LLC IRG4BC40UPBF-INFULTRAFAST SPEED IGBT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC40UPBF-INF | Bulk | 64 | 64 |
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Rochester Electronics LLC IRG4BC40W-LPBFIGBT 600V 40A TO-262 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC40W-LPBF | Bulk | 16 | 16 |
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Infineon Technologies AG IRG4BC40UIGBT 600V 40A TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC40U | Tube | 200 |
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IRG4BC40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter |
Original |
5429A IRG4BC40WPbF 150KHz 4BC40WPbF O-220AB | |
3000 0442Contextual Info: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies |
Original |
95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. 3000 0442 | |
IRG4BC40W
Abstract: irg4bc40 354 GE
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Original |
1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE | |
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Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z |
OCR Scan |
IRG4BC40S | |
IRG4BC40SContextual Info: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91455B IRG4BC40S O-220AB O-220AB V252-7105 IRG4BC40S | |
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Contextual Info: PD - 95788 IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies |
Original |
IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. | |
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Contextual Info: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91455B IRG4BC40S O-220AB O-220AB | |
IRG4BC40KContextual Info: PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency |
Original |
IRG4BC40K O-247AC O-220AB IRG4BC40K | |
IRG4BC40S
Abstract: TO-220AB IRG4BC40S
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Original |
IRG4BC40S O-220AB O-220AB IRG4BC40S TO-220AB IRG4BC40S | |
IRG4BC40FContextual Info: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91454B IRG4BC40F O-220AB O-220AB C252-7105 IRG4BC40F | |
irg4bc40
Abstract: IRG4BC40W
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Original |
1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W | |
IRG4BC40UContextual Info: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91456E IRG4BC40U O-220AB O-220AB IRG4BC40U | |
IOR 451Contextual Info: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
OCR Scan |
IRG4BC40F T0-220AB IOR 451 | |
J 420 GContextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies |
OCR Scan |
pd-9165 IRG4BC40W --600V J 420 G | |
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Contextual Info: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove |
OCR Scan |
IRG4BC40W --600V | |
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Contextual Info: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91454B IRG4BC40F O-220AB O-220AB | |
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Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies |
Original |
IRG4BC40WS IRG4BC40WL EIA-418. | |
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Contextual Info: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91456E IRG4BC40U O-220AB O-220AB | |
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Contextual Info: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter |
Original |
5429A IRG4BC40WPbF 150KHz O-220AB | |
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Contextual Info: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies |
Original |
5788A IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. | |
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Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
IRG4BC40FPbF O-220AB O-220AB O-220AB. | |
ic c 838
Abstract: IRG4BC40S
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Original |
91455B IRG4BC40S O-220AB O-220AB ic c 838 IRG4BC40S | |
rectifier d 355 n 2000
Abstract: transistor iqr
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OCR Scan |
IRG4BC40K O-247AC rectifier d 355 n 2000 transistor iqr | |
15 3cv secContextual Info: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V |
OCR Scan |
IRG4BC40K O-247AC O-22C1AB 15 3cv sec | |