IC T 4A 8 Search Results

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

R704A

Abstract: r52 hp 6A125VAC
Contextual Info: — I 14,0 54 2.0 4,0 1 I =o 5,0 IE =o . 19,2 H Panel P a rt 82710025 -o.i 21,5 h ” 1 2 .9 +0,1 T h ic k n e s s N um ber = ,75 t o U L/CSA 1,25 r a t in g R52 6A/125VAC 4A/250V AC 1/10 HP, 125 & 250 VA C 12,5 VDE R70 4A 1A in d u ctiv e / 2 5 0 V A C

kta124

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1243 e p it a x ia l p la n a r pnp t r a n s i s t o r STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 Vce=-2V, Ic=-0.5A . • hFE=70(Min.) (Vce=-2V, Ic=-4A). • Low Collector Saturation Voltage.

Contextual Info: POWER PRODUCTS P o w e r M O SFET D riv er S in g le D ual F e a tu re s Ip e a k r on T r /T f V SUPPLY P ackage P - P in s N = P D IP s - S O IC M = SO L EL7104C N o n -In v ertin g 4A 3i! 20 n s/2 0 ns 16.5V 8P-N-S EL7114C In v e rtin g / Iso-D rains 4A

D-733

Abstract: D733 2SC2913 AC74 I0A10
Contextual Info: í ó s h í b Sb T T d is c r é t e / op t o> 9097250 TOSHIBA DE | T m ? 2 S D 56C <D IS C R E T E /O P T O 2SC2913 features INDUSTRIAL APPLICATIONS Unit in nun C O N V ERT ER A P P L IC A T IO N . : . Excellent Switching Times : tr= l .0/is Max.) , tf=1.0/ts(Max.) at IC=4A

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1241 e p it a x ia l p la n a r pnp t r a n s i s t o r STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • h FE= 1 00 ~ 32 0 V ce=-2V , Ic=-0.5A . • hFE=70(Min.) (V ce=-2V , Ic=-4A). • Low Collector Saturation Voltage.

2SD1555

Abstract: 2SD1555 equivalent
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE CO LO R TV H O R I Z O N T A L O U T P U T A P P L I C A T I O N S . FEATURES: . High Voltage :Vggo= T500V . Low Saturation Voltage: . High Speed sat = 5V(M a x .)(Ic=4A , I b = 0 .8A) :tf = 1.0(js(Max .) . Built-in Damper Type

PJ1386

Abstract: PJB1386 PJB1386CY
Contextual Info: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )

power transistor d2498

Abstract: d2498 transistor D2498 power transistor d2498 test circuit TV d2498 2SD2498
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR T O SH IB A TECHNICAL 2SD2498 DATA SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • Low Saturation Voltage : VCE(sat) = 5V(Max.)(IC = 4A, IB = 0.8A) High Speed 3.0 ±0.3 p-

jec amplifier

Contextual Info: HIGH VOLTAGE POW ER O PERATiO NAL AM PLIFIER Apè* ÏT cT T r e cT T oT oT " » PA92 h t t p ://W W W .A P EX M IC R O T E C H .C O M 800 546-A PEX (800) 546-2739 FEATURES • • • • HIGH VOLTAGE — 400V (±200V) LOW QUIESCENT CURRENT — 10mA HIGH OUTPUT CURRENT — 4A

Contextual Info: r T 'l PAI9 • PA19A A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • VERY FAST SLEW RATE — 900 V/ns POWER MOS TECHNOLOGY — 4A peak rating

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Unit : mm Package : 2F D4F60 + 600V 4A Ü 43 f i 2.5 PyHa-t W • B s t t ic f f ln s f lis t t 6.1 Date code Standard soldering pad O iS I fsm C0.8 («fiLtCDSnîEOLYCB:, }£EP tt«£C !B 18<

RLP-30

Abstract: buz11 application note BUZ11 SMD equivalent TRANSISTOR BC337 SMD buz11 r5 transistor SMD v1 MOSFET operational amplifier discrete schematic bc33* high power mosfet SMD V1 SMD TRANSISTOR N8
Contextual Info: DISCRETE AND STANDAR D ICs GROUP LPR30 by T. Sampieri Standard Circuit Product Marketing LOW DROP VOLTAGE REGULATOR DRIVER FOR AN EXTERNAL MOSFET N1 LP 4A R3 A6 0N 14 The LPR30 is a very Low Dropout Regulator 8 Controller in a single IC solution for very TO GATE OF

Contextual Info: MITSUBISHI ASTTLs M74AS1808P HEX 2-IN PU T AND DRIVER DESCRIPTION The M 7 4A S 1 808 P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW consisting of six 2-input positive-logic A N D buffer gates, usable as n egative-log ic OR buffer gates.

Contextual Info: DESCRIPTION The M 7 4A S 1 832 P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW consisting of six 2-input positive-logic O R buffer gates, IN P U T 5 B —•[ 7 OUTPUT 6 Y — |T usable as n e g ative-log ic A N D buffer gates. f 6a^GE

2SC1172 TOSHIBA

Abstract: A8A Transistor TRANSISTOR T-03 2sc1172 Toshiba 2SC1172 AC42C BA RV
Contextual Info: 2 s c 1172 SILICON NPN T R IP L E D IFFU SE D MESA TRANSISTOR II t \yií*f filetti tlfñ O Unit in mm o Color TV Horizontal Output Applications • M Œ T t ; i f 02SOMÄX. <¡>2lÆMAxI t S V0B0= 1500V v 0E sat = 5V (Max.) : +a o9 xo -a o 3 (Ic = 4A, Ib =Q8A)

GJ1386

Contextual Info: ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 P NP EP ITAX I AL S ILI CO N T RANSI STOR Description The GJ1386 is designed for low frequency applications. Features Low VCE sat =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions

Contextual Info: 2SB1386 PNP SILICON TRANSISTOR LOW FREQU EN CY PN P T RAN SI ST OR 1 ̈ FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ̈ SOT-89 ORDERI N G I N FORM AT I ON Order Number Lead Free Halogen Free

A-1B-2A-28

Abstract: DS9622 SN54ALS38
Contextual Info: T Y PE S SN54ALS38, S N 7 4A L S3 8 QUADRUPLE 2 INPUT POSITIVE NAN D BUFFERS M O TO R O LA WITH O P E N -C O LLE C T O R O U T P U T S 000220 i3 / in d e p e n d e n t 2-inp u t >c.J ' d esc rip tio n T he s e d e v ic e s NAND buffer c o n t a in gates four

Contextual Info: F-205-1 S" T .0 2 5 Mates w ith: SSW, SSQ, SSM, BSW, ESW, ESQ, BCS, SLW, CES, IDSS, IDSD, HLE TER M IN A L STR IPS s o T IW Iy H IC 5>IVI 1 II 1 SPECIFICATIONS LEAD STYLE N 0 - PINS PER ROW AMBIENT TEMPERATURE CURRENT RATING 20°C 7A 40°C 6A 60°C 4A 80°C

GM1386

Contextual Info: CORPORATION GM1386 ISSUED DATE :2004/02/09 REVISED DATE :2005/08/24B PNP E PITAX I AL P L ANAR T RANS ISTO R Description The GM1386 is an epitaxial planar type PNP silicon transistor. Features Low collector saturation voltage : VCE sat = -0.35V(Typ.) @ IC/IB=-4A/-0.1A

Contextual Info: t^T T E IC AN6295NK AN6295NK T= l7 1 Hi-Fi Dual Hi-Fi VTR Peak-Noise-Reduction Circuit • fit 9 Unit : mm A N 6 2 9 5 N K !i, - ' O r - I V T B v' -i X i) r ? 1^-7 7 ' T - X t r - f f - 5 ■/ ? > > i D30 D29 D28 D27 D26 D>25 D24 D23 1a !> ¥ * « 2a 3a 4a

74AC11158

Abstract: 74AC11158D 74AC11158N 74ACT11158 74ACT11158D 74ACT11158N
Contextual Info: P h ilip s C o m p o n e n t s — S ig n e t ic s 7 4A C / A C T 11158 Docum ent No. 853-1507 E C N No. 00733 Date of Issue O ctober 17, 1990 Status Product Specification Quad 2-input multiplexer, INV A C L P r o d u c ts QUICK R E F E R E N C E D A T A FEATURES

37732S4AFP

Contextual Info: I • ^24=1020 Ü G l S b 7 b 27=5 ■ M I T 4 M ITSUBISHI M IC RO CO M P U T ERS M 37732S 4F P ,M 37732S 4A F P M 37732S 4B FP M IT S U B IS H I¡H IC M P T R /M IP R C H E » . DESCRIPTION 16-BIT CMOS M ICROCOM PUTER PIN CONFIGURATION TOP VIEW) The M 37732S4FP is a single-chip microcomputer designed