isplsi device layout
Abstract: No abstract text available
Text: bäE J> L A TT IC E S E M I C O N D U C T O R Lattice S 3 ûticm ,i GGQSt .71 fc,b4 p L S r and ispLSI 1048C Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High-Speed Global Interconnects — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers
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1048C
-isp1048C
1048C
128-Pin
1048C-70LQ
1048C-50LQ
1048C-50LQI
isplsi device layout
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Untitled
Abstract: No abstract text available
Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type
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fl23b32Q
GG1722S
SMBT2907
Q68000-A4336
Q68000-A4337
Q68000-A6501
Q68000-A6474
1/CE-20V
23b32Q
A23b32G
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NEC C959
Abstract: 7KIP C959 2SD1701 PA33 T092 Nec b 616 n471 TN59
Text: '> > ; = ] > Y = ÿ > i> 7 .^ S ilic o n T r a n s is to r 2SD1701 41 m i t 800 m A Î t ' W f l h F E f ^ ^ & « s ìè t t o y — ± : mm 5.2 MAX. h Y 7 4 7" 'J > F > f ê W o Î É V CE (s a t)T "to i ( t a = 25 ° c) a »& s -f- S Ÿ§- -¥• \ÎL
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2SD1701
SC-43B
OttOt07-
NEC C959
7KIP
C959
2SD1701
PA33
T092
Nec b 616
n471
TN59
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TRANSISTOR BJ 033
Abstract: 2SB1068 JAN 5751 m5ss
Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm
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2SB1068
o2SD15131
PWS10
TRANSISTOR BJ 033
2SB1068
JAN 5751
m5ss
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2SB1094
Abstract: TC-5916 2SD1585
Text: -y — 5 7 . h ✓<'7 — Silicon P o w e r Tran sistor 2SD 1585 N P N = m f ë if c 7fc '> V = l > t ë m & ï â w t im m m L t t ê 1 0 . 5 MA X. l t t o V ceo^60 V, V eboS7.0 V, I c do ^3.0 A Jc — i / K ' ' e,y ^ o ^ g i i c t & i i J: t / ' f - Ê î t ' / v f> >
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2SD1585
2SB1094
-XFe81|
T-C0T-I0C01DCM
2SB1094
TC-5916
2SD1585
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Untitled
Abstract: No abstract text available
Text: i NICHT VER M A SST E KANTEN K O A X ST EC K V E R B IN D E R NACH CECC 22220 I ÄNDERUNGEN DIE DEM TECH GEGEN STECKER/KONTAKT: MATED WITH: NISCHEN FORTSCHRITT DIENEN, SIND NICHT M AßSTÄBLICH COAX CONNECTOR COMPLIES WITH SPEC. CECC 22220 □ Q REV. COPYRIGHT 1994
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82980fc-1
12-JUL-N
12-JUL-M
667A-1
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TT 2222
Abstract: DBA150 DBA150C DBA150G 75Ai
Text: Ordering number: EN 2222B _ DBA150 Silicon Diffused Junction Type 15.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure. • High reliability attained by glass passivation, • Peak reverse voltage : Vrm = 200 to 600V. • Average rectified cu rren t: I q = 15A.
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2222B
DBA150
DBA150C
DBA150G
X270X
TT 2222
DBA150
75Ai
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ic SE 135
Abstract: 00jT K49H
Text: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •
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PWS10
CycleS50
ic SE 135
00jT
K49H
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Untitled
Abstract: No abstract text available
Text: 10 MB . NOTES tt M AT E RI A L J \ 0 ' j y 0 ‘ : PPHS, U L94V-0 2-S sO P :P'JOraffl t = 0 . 2 , O'lMOTift SS0*2222 2 0 H O S - B R O .( t =O.Z), T IN - B I S M U S T H OVER NICKEL PLA T IN G HOUSING : PPHS, U L 9 4 V - 0 TE RM IN AL # 7 4 : U V it im ( t = 0 .
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L94V-0
15MAX.
SD-52975-014
EN-02JA
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uPA500T
Abstract: uPA501t s 452-2 IC-8180 PA501T PA501 upa500 TN 0749
Text: NEC i — S 7 ’ S /— h '> IJ =1 > = 7 h > S ilic o n T r a n s is to r / P N P x ,u PA 5 0 1 T ! i , + 1 J =1 > ¿ P A 5 5 \ î > 2 0 S& b ^ ( ^ - { î : mm) t 'ÿ y - ^ X ^ ÿ ^ S S ;IÎW IP ]± , | g 3 X h c o H f i J M d ìì iK .0.16 Îg;i, L^ -t„
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uPA500T
uPA501t
s 452-2
IC-8180
PA501T
PA501
upa500
TN 0749
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Untitled
Abstract: No abstract text available
Text: 1_ A ^ — • P Ip U , lilv . .tJ tU f jf _ . POWER Specialists 1601 N. Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex Num ber: 4994462 Cable Address: "TRIMAG" TSP2 SERIES 1-2 W a tt DC-DC CONVERTER SIP Type FEATURES • •
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transistor w bh 212
Abstract: SK FN 521 sol 4011 be 2SD1779 TN-6014 TN60 hia 51
Text: •7 s— "S7 • S ' — h - NEC ^ Silicon T ran sisto r 2SD1779 & m M M o « h FE -0 L * ' i f& V CE, „ t) f t w ^ - f i ^ mm) t - f - ' l $1 t L T f t i S T 'i - o hKE= 8 0 0 ~ 3 2 0 0 (a t V CE = 5 .0 V, Ic = 1 .0 A ) V CE(sat) = o / J '^ T * f F
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2SD1779
transistor w bh 212
SK FN 521
sol 4011 be
2SD1779
TN-6014
TN60
hia 51
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stk8250
Abstract: af772 50Wmin STK8
Text: STK8250 Na 9 6 7 2222 50Wmin A F ' < 1 - 7 SAN YO 2 9 ¡S « « i • b 9 ^ * r v r ^ ’STig?) x -r v-?- > r u - /t 7 - a t ^ -f r X □ V h □ - ^ % -tía a ¿ ir ^ y . #5X1/ ^ • / W 7 a ’f c if t O l ít lE f r ^ g J f C T í f *í ? - t ' - X *3
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50Wmin
rtZ43ff&
20kHz
TMG-200*
2222Y0
STK8250
stk8250
af772
STK8
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HT - 0886
Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2
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PWS10
CycleS50
HT - 0886
HT 0886
g3je
ht 9366
MARKING LE50
T108
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th 2190
Abstract: 2SD1020 IC 4011 MA 7824 T460-8525 LM011 IC700 tl 7824
Text: :F — S7 • S/— S '> • ; = ] > S ilic o n h T r a n s is t o r 2SD1020 N P N x t ° ^ + '> 7 ,' ; P î ^ '> «J □ ft » > h =7 > î > 7 > 9 * m ffl, 'ÎS * Œ * t it lB S i i7 ) i — 9 K 7 -i 7 ', -?■c o f t g - f f K v 4 7 ' m W i 4.0 ± 0 . 2
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2SD1020
O2SB810
PWS10
D13524JJ4V0DS00
TC-5499B)
th 2190
2SD1020
IC 4011
MA 7824
T460-8525
LM011
IC700
tl 7824
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la 5531
Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£
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PWS10
la 5531
TC6116
TC-6116
TC 6116
fn1a3q
FA1A3
Transistor L83
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Untitled
Abstract: No abstract text available
Text: M e ta llize d P o lyeste r C a p a cito r for M otor Running ECWJJfc ECWJ Series A c o m p a c t , lig h t-w e ig h t c a p a c it o r s u ita b le fo r m o to r • fiffctcy ^ 7 ^ X 1 - ' # IJ i x f ^ 7 ru n n in g . N o n - in d u c tiv e ty p e u s in g m e ta lliz e d p o ly e s te r
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35155JC
35205JC
35255JC
I05JC
430VAC,
43I55JC
43205JC
43255JC
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BA1A4M-T
Abstract: BA1A4M 3773A T108 ptc T108 t0429
Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]
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PWS10
CycleS50
i0992
BA1A4M-T
BA1A4M
3773A
T108 ptc
T108
t0429
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Untitled
Abstract: No abstract text available
Text: |_ _ A 1601 N. Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex Number: 4994462 Cable Address: "TRIMAG" | IK . .A llf V ° POWER Specialists L. 975ZW SERIES 15 W a tt DC-DC CONVERTER 2:1 W id e R a n g e In p u t FEATURES PCB M o u n t a b l e
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975ZW
975ZW24T02
975ZW24T03
975ZW48T02
975ZW48T03
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ic ntp- 3000
Abstract: IIH13 Scans-0088096
Text: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o
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IEI-620)
PWS10
TC-6083A
ic ntp- 3000
IIH13
Scans-0088096
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70 U 20 A
Abstract: No abstract text available
Text: A 1601 N. Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex Number: 4994462 Cable Address: "TRIMAG" |n « lllv a ^ yQ „ . . POWER Specialists 980 Z X SERIES 3 0 Watt DC-DC CONVERTER 4:1 W ide Range In p u t FEATURES • • • • •
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X24T01
980ZX24T02
980ZX24T03
X48T01
980ZX48T02
980ZX48T03
70 U 20 A
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Untitled
Abstract: No abstract text available
Text: ♦ ^ ^ 1601 N. Clancy, Visalia, CA 93291 209 651-2222 Fax (209) 651-0188 ITT Telex Number: 4994462 Cable Address: "TRIMAG" TRI-MAG, Inc. ^ y O H * POWER Specialists 972ZX SERIES 15 W a tt L o w P r o f ile DC-DC CONVERTER 4 :1 W id e R a n g e In p u t FEATURES
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972ZX
X48T01
972ZX48T03
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Transistor BC 227
Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
Text: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o
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Ta-25
CycleS50
Transistor BC 227
TRANSISTOR BC 456
TRANSISTOR BC 413
AA1A4M
PA33
T108
transistor BC 247
TRANSISTOR BC 413 b
3ete
ATT 1177
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stk 2155
Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
Text: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f
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2SA1460
stk 2155
stk 490 110
2SC3733
transistor NPN 2sc3733
N50M
2sa1460-t
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