IC-176 & MATCHING IC Search Results

TOKO IF COIL

Abstract: BKXN-K4636BJF toko 455khz if transformer 166NNF-10264AG 166NNF10264AG toko 10k coil BKACS-K586HM 614AG-0145GW TOKO quad coil LM1865
Contextual Info: 176 r&TOKO Application Notes Application Notes The following listings are provided to help you find the appropriate coils and filters that compliment certain IC’s. Additional listings are developed over time so if you do not find matching devices to IC’s you are using, please contact your nearest TOKO sales

IC51-1604-845-4

Abstract: IC51-1284-1788
Contextual Info: IC51- 064 4- 038 • 1 III! I ‘ Socket Series Insulation Resistance: Characteristics" 1,000MQminimum at 500 VDC Withstanding Voltage: 700 VAC for 1 minute Contact Resistance: 30mQ max. at 10mA/20mV (Initial) PES/PEI -55"C - +170*C Operating Temperature:

OC1016

Abstract: SFE 1730 LTE21025R LTE21050R
Contextual Info: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R

EVAL-08/UJA1066TW/5V0/T,51-datasheet

Contextual Info: Product Description SXH-1 Stanford M icrodevices’ SXH-1 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-1 offers significant advantages with higher gain and higher linearity than existing com petitive

Contextual Info: Product Description SXH-189 Stanford M icrodevices’ SXH-189 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-189 offers significant advantages with higher gain and higher linearity than existing competitive

T 402 transistor

Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP

Contextual Info: QFP, PQFP, & LCC IC51/IC53 Series FEATURES • Any kind of SMT type or IC package type SOP & QFP Available. • High reliability, durability and temperature range. • Custom made also available for high pin count and fine-pitch packages. CHARACTERISTICS

Contextual Info: Nom inal diam eter WitfKkaw. Rated force current 4 mm 32 A Safely Jumpers 4 m ir Type Part No SKS 4 -19 L 24.0023-2' Contact resistance 0.3 mQ Safety male jum per 4 mm .160 in dia., plug spacing 19 mm (.750 in), one piece machined brass, bent and gold plated with MC -Multi lam . Polyamide insulated.

TPM1919

Abstract: TPM1919-40
Contextual Info: TPM1919-40 FEATURES: • H IG H PO W ER ■ PARTIALLY M A T C H E D TYPE ■ H E R M E T IC A LL Y SEA LED PACKAGE P-idB = 46. 0 dB m at 1. 9 G H z ■ H IG H GAIN GidB = 13 dB 3t 1. 9 G H z RF PERFO RM AN CE SPEC IFIC A TIO N S Ta = 25 °C C H A R A C TE R IS T IC S

Contextual Info: Nom inal diam eter Withrfraw. Rated current force 4 mm Contact resistance .itiSfr MutUUm" 0.5 mQ 32 A is Jumpers • 4 mm Type Part No KS 4 -1 9 L 24.002C S -K S 4 - 1 9 L 24.5051 Male jumper 4 mm .160 in dia., plug spacing 19 mm (.750 in), one piece machined brass, bent,

IC51-1844-1148

Abstract: IC51-128 IC51-1964-1952 IC51-1284-1433 IC201 ic51-0804-795 IC51-1014 IC51-1284-1788 IC51-0804-711 IC51-1764-1505-5
Contextual Info: QFP, PQFP, TQFP Clamshell IC51 Series IC51- 064 4- 038 Insulation Resistance: Withstanding Voltage: Contact Resistance: Operating Temperature: Socket Series No. of Leads No. of Sides with Contacts Design No. Characteristics 1,000M½minimum at 500 VDC 700 VAC for 1 minute

NP351

Abstract: NP351-064-148 NP351-180-139 212207 NP351-21653 NP351-064-227 X3640 np351-532 AC-28179 ac14425
Contextual Info: Series NP351 BGA / CSP 0.80mm Pitch TH - Open Top Specifications Part Number (Details) Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: Mating Cycles: 1,000MΩ min. at 100V DC 100V AC for 1 minute

2.45 GHz single chip transmitter

Abstract: Lowpass Filter 3 GHz atr2406 transmitter circuit ATR2406 "application note" antenna 50 ohm 2 ghz Antenna Power Transisitor 100V 2A RF MODULE atr2406 receiver circuit
Contextual Info: PCB-Design Guidelines This application note provides information and guidelines to the user for making it very easy and convenient to develop a compliant RF-System with the ATR2406 Single-Chip Low-IF Transceiver IC. The reference layout of the application board is a close to production design,

176L

Abstract: Calex 2492 resistor
Contextual Info: Models 176 and 178 F ea tu res * • D rifts to <0 .2 5 |j V /oC ■ Input Im pedance >100 M il ■ C M R : 120 dB @ G = 1000 ■ G ain Linearity of +.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit

15J02

Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen­

NP351-064-148

Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Contextual Info: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

Calex

Abstract: 176J 176L
Contextual Info: Model 176 and 178 DC Amplifiers Features* ! Drifts to <0.25µV/°C ! Input Impedance >100 MΩ ! CMR: 120 dB @ G = 1000 ! Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit

ISO 18000-6D

Abstract: 18000-6D rfid reader 915MHZ EPC gen2 953MHz passive rfid tag circuit diagram 18000-6C 125 kHz RFID tag antenna EM iso/rfid "write sensitivity"
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C / ISO 18000-6D TOTAL RFID IC Description Features EM4124 is a Class-1 Generation-2 (Gen2) IC compliant with ISO/IEC 18000-6:2010 Type C & Type D (TOTAL) as TM well as EPC Class-1 Generation-2. TOTAL is a tag-talkonly protocol designed for fast moving objects and

Calex

Contextual Info: Models 176 & 178 DC Differential Amplifiers Features* Description n Drifts to <0.25µV/°C n Input Impedance >100 MΩ n CMR: 120 dB @ G = 1000 n Gain Linearity of ±.005% The 176 all versions and the 178 are general purpose differential input DC amplifiers. The best all-around unit is the

Contextual Info: Models 176 and 178 Features* • Drifts to <0.25|jV/oC ■ Input Impedance >100 M£2 ■ CMR: 120 dB @ G = 1000 ■ Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C RFID IC Features Description TM EM4124 is a certified EPC Class-1 Generation-2 Gen2 IC and compliant with ISO/IEC 18000-6:2010 Type C.   ISO 18000-6C compliant EPC Class-1 Gen-2 certified

ISO 18000-6C

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4124 EPC C-1 G-2 / ISO 18000-6C RFID IC Description Features TM EM4124 is a certified EPC Class-1 Generation-2 Gen2 IC and compliant with ISO/IEC 18000-6:2010 Type C.   ISO 18000-6C compliant EPC Class-1 Gen-2 certified

Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR TNM2600-7 TECHNICAL DATA FEATURES : • H IG H PO W ER ■ H IG H G AIN ■ H E R M E T IC A LL Y SEALED PA C K A G E PidB = 39-5 dB m at 2.6 G H z G-|cib = 8-5 dB at 2.6 G H z RF PERFORMANCE SPECIFICATIONS Ta = 25°C