LB53T31 Search Results

OC1016

Abstract: SFE 1730 LTE21025R LTE21050R
Contextual Info: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R

BUK637-500B

Abstract: BUK637-500A BUK637-500C
Contextual Info: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 *7 -is* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: N AMER PHILIPS/DISCRETE = TOD D 0800160 AMPEREX, 90D 10652 D • ^ 5 3 1 3 1 OOlQbSS S SLATERSVILLE t-03-M PHSD51 JV SCHOTTKY-BARRIEB RECTIFIER DIODE High-efficiency rectifier diode in a DO—5 metal envelope, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. It is intended for use in low

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

7Z66

Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Contextual Info: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.

1521 n-p-n

Abstract: BSR17A IEC134 BSR17A equivalent
Contextual Info: • bbS3T31 N AMER 0025577 7 50 H A P X PHILIPS/DISCRETE b7E BSR17A D _y v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon tran sisto r in a m ic ro m in ia tu re plastic envelope intended fo r sw itching and linear applii tio n s in th ic k and th in -film circuits.

Contextual Info: D EVELO PM EN T DATA L b S a ^ l aoiatas m 5 B U P22B F B U P 2 2C F This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T - 33 - 0 ? S IL IC O N D IFFU S E D P O W E R T R A N S IS T O R S

BLY93A

Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Contextual Info: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

PHILIPS MOSFET MARKING

Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.

SOT-23 MARKING T36

Abstract: BSR19 BSR19A BSR20 BSR20A
Contextual Info: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.

BU826

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application.

BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Contextual Info: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

BUP22C

Abstract: BUP22BF BUP22CF
Contextual Info: D E V EL O P M EN T DATA l 1^53=131 GGlöböS s T his data sheet contains advanca information and specifications are subject to change w ithout notice. BUP22BF BUP22CF 25E D N AMER PHILIPS/DISCRETE T - 3 3 - O ? SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistor in a SO T199 envelope intended for use

557 sot143

Abstract: PHILIPS 557 SOT143 BFG505 BFRS05 LG 631 TV LG t51 0194 asm 1442
Contextual Info: Philips Semiconductors AMER bbS3T31 ODSHTb? P H IL IP S /D IS C R E T E NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. SMfl ^ Product specification

transistor bt 808

Abstract: d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331
Contextual Info: • bbS3131 00B5211 D15 H A P X Philips Semiconductors N AMER Product specification PHILIPS/DISCRETE b ?E D NPN 9 GHz wideband transistor FEATURES BFR505 e PINNING • High power gain PIN • Low noise figure 2 DESCRIPTION 1 Code: N30 • High transition frequency

BYV33-35

Abstract: BYV33-40A m0811 BYV33 BYV33-40 BYV33-30 S 0319
Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl 0011351 7 BYV33 SERIES T-03-19 SCHOTTKY—BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in

Contextual Info: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA

G022

Abstract: M1239 ALPS 102 alps 103 b BYV30 BYV30-400U
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • 1^53*131 0022S37 T ■ BYV30 SEHItS 7 ^ 0 3 - /7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO— 4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

42t SOT23

Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40
Contextual Info: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.