Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA965 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Complementary to 2SC2235 z Power Amplifier Applications 2. COLLECTOR 3. EMITTER
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O-92MOD
2SA965
92MOD
2SC2235
-10mA
-120V
IC-100mA
-500mA
-50mA
-100mA
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c3072
Abstract: line filter 6.8mH C307-2
Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]
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C3072
C3072
016REF
10kHz,
100mVAC,
100mADC,
100kHz,
line filter 6.8mH
C307-2
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transistor d 4515
Abstract: Transistor 4515 2-21F1C GT20D101
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201
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GT20D101
GT20D201
2-21F1C
transistor d 4515
Transistor 4515
2-21F1C
GT20D101
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MA3232
Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCBO-100V
BVCE0-80V
BVEBO-15V
BVCBO-60V
BVCEO-40V
BVCB0-80V
BVCE0-60V
BVCB0-100V
MA3232
BF123
CA3036
FT4017
2n1613 replacement
A431
BF121
DIODE SJ 98
DM01B
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
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2TX750
Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V
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ZTX750
ZTX751
2TX750
ZTX751
300fis.
2TX750
VCS-60V
ZTX752
ZTX753
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KTN2369AU
Abstract: KTN2369U
Text: KEC KOflEA ELECTRONICS CO.LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369U/AU EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCe=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.
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KTN2369U/AU
500MHz
100MHz,
KTN2369AU
KTN2369U
100mA,
100MHz
KTN2369AU
KTN2369U
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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Untitled
Abstract: No abstract text available
Text: BC237S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTE0NICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS a t Tan*=25*C Symbol Rating Characteristic Collector-Emitter Voltage Colfector-Eoatter Voltage
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BC237S
OT-23
100uA
125gC
100mA
10inA
Ic-100mA
100mA
100uA
10VIe
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transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
transistor k1502
dr 25 germanium diode
DIODE 10N 40D
2N3379
CA3036
K1502
K1501
2N5513
darlington 12V 6.2A
P1029
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2n2709
Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
2n2709
C621
2N4411
c643
OC44
400M
BSV55AP
BSV55P
T072
GM300
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BAL0105-100
Abstract: J3315 Scans-00115697
Text: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved
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BAL0105-100.
J05-100â
560mW
BAL0105-100
J3315
Scans-00115697
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 ISSU E 4 - OCTOBER 1995_ FEATURES * 400 Volt V,CEO Low saturation voltage CO M PLEM ENTARY TYPE PARTMARKING DETAIL - FZT758 FZT658 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OT223
FZT658
FZT758
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BC182L complementary
Abstract: BC212L BC182 BC212 8C132 BC182L 1C10
Text: BC182 BC182L BC212 BC212L //SJSJW/SStMfS/S&SSSS/SSSSr/fS/f'SS.'SSSSS/.'YS* D E S C R IP T IO N The B C 182, BC1S2L NPN & BC212, BC212L (PNP) ÍH are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as
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BC182,
BC212,
BC212L
BC182
BC182L
BC212
BC212L
BC182.
BC182L complementary
8C132
1C10
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acrian inc
Abstract: Acrian acrian ic
Text: 0182, 99.8 ACRIAN: INC, T7 DEI OlflETTfl □□D13t,2 S ACRIAN INC GENERAL 9B S E 2 D E S C R IP T IO N 2 WATTS * 22 VOLTS 960 MH2 The 9BSE2 is a common emitter, silicon bipolar transistor capable of providing 2 watts of output power at 960 MHz. The device is designed for cellular base station applications
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D13ti5
150Volts
Ic-100mA
acrian inc
Acrian
acrian ic
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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DIODE SJ 98
Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
DIODE SJ 98
CA3036
silicon epitaxial mesa diode microwave switch
V405T
DARLINGTON 3A 100V npn array
2n1613 replacement
A431
MT726
MT869
MT995
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18200T
Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
18200T
germanium low power 150mW
460MSA
2N2097A
C621
LM 18200T
P1004
RT1116
2SC814
transistor C633
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acrian RF POWER TRANSISTOR
Abstract: capacitor 47pf 3 pin TRIMMER capacitor 10J capacitor acrian RF resistor acrian inc acrian
Text: 0182998 G EN ER A L ACRI AN INC“t ? DE j D l f l H T l ñ O O Ol Q f l l T - 3 3 -t/ fi | 0 9 1 2 - 7 7 WATTS - 50 VOLTS 960-1215 MHz D E S C R IP T IO N The 0912-7 is an internally matched, common base transistor providing 7 watts of pulsed RF output power
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T-33-11
acrian RF POWER TRANSISTOR
capacitor 47pf
3 pin TRIMMER capacitor
10J capacitor
acrian RF resistor
acrian inc
acrian
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power amplifier 88-108
Abstract: acrian inc B3-28 FM150 FM150-2 FM Amplifier 300w
Text: 0 1 8 2 9 9 8 ACRI AN GENERAL INC ~T? 0Ü01S14 2 | D T-33-15_ DESCRIPTION The FM 150 is specifically designed for Class C operation in the VHF FM broadcast band. Acrian’s advanced design and process technologies insure rugged and reliable performance. FM BROADCAST
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0001S14
T-33-15
-65to
power amplifier 88-108
acrian inc
B3-28
FM150
FM150-2
FM Amplifier 300w
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S2818
Abstract: S2818 equivalent
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2818.2818A COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES : . High Voltage . Low Saturation Voltage . High Speed Unit in mm 025.0 MAX. VCES=1500V vCE sat =lv (Max.)(S2818A) tf=0.7,as (Typ.) . Built-in Damper Type.
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S2818
S2818A)
S2818A
200mA,
IC-100mA,
S2818 equivalent
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transistor A431
Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
MA3232
UD1001
A431 transistor
FT4017
MT42a
20C26
DM01B
SAC42
L29a
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TRANSISTOR A104
Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general
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BCY58
Ic-10â
R2-700ohm
TRANSISTOR A104
BCY59C
BCY 85
A104
Transistor BCY58
BCY59D
A104 transistor
BCY 68
CEB15
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KTN2369A
Abstract: J 2N2369 KTN2369 2369A
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics.
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KTN2369/A
500MHz
100MHz,
KTN2369/2369A
2N2369/2369A.
KTN2369A
KTN2369
100mA,
KTN2369A
J 2N2369
KTN2369
2369A
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