IDD8 Search Results
IDD8 Price and Stock
Analog Devices Inc LT3650IDD-8.4-PBFIC BATT CHG LI-ION 2CELL 12DFN |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LT3650IDD-8.4-PBF | Tube | 121 | 1 |
|
Buy Now | |||||
Analog Devices Inc LT3650IDD-8.2-PBFIC BATT CHG LI-ION 2CELL 12DFN |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LT3650IDD-8.2-PBF | Tube | 121 |
|
Buy Now | ||||||
Analog Devices Inc LT3650IDD-8.4-TRPBFIC BATT CHG LI-ION 2CELL 12DFN |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LT3650IDD-8.4-TRPBF | Cut Tape | 1 |
|
Buy Now | ||||||
Analog Devices Inc LT3650IDD-8.2-TRPBFIC BATT CHG LI-ION 2CELL 12DFN |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LT3650IDD-8.2-TRPBF | Reel | 2,500 |
|
Buy Now | ||||||
Analog Devices Inc LT3650IDD-8.2#PBFBattery Management Hi V 2 Amp Mono 2-Cell Li-Ion Bat Chr |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LT3650IDD-8.2#PBF | 222 |
|
Buy Now | |||||||
![]() |
LT3650IDD-8.2#PBF | 2,420 |
|
Buy Now | |||||||
![]() |
LT3650IDD-8.2#PBF | 121 |
|
Buy Now |
IDD8 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
---|---|---|---|
mpc5566
Abstract: MPC5566MZP80 mpc5566mzp132 MPC5566MVR144 spc5566 mpc5566mzp144 MPC5566M MPC5566 instruction set MPC556 G38-87
|
Original |
MPC5566 MPC5566MZP80 mpc5566mzp132 MPC5566MVR144 spc5566 mpc5566mzp144 MPC5566M MPC5566 instruction set MPC556 G38-87 | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology |
Original |
PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 PD48288236 | |
Contextual Info: Preliminary User’s Manual V850ES/JF3-L 32-bit Single-Chip Microcontrollers Hardware PD70F3735 μPD70F3736 Document No. U18952EJ1V0UD00 1st edition Date Published February 2008 N 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U18952EJ1V0UD |
Original |
V850ES/JF3-L 32-bit PD70F3735 PD70F3736 U18952EJ1V0UD00 U18952EJ1V0UD G0706 | |
Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. |
Original |
M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72 | |
Contextual Info: Preliminary User’s Manual V850ES/SG2 32-Bit Single-Chip Microcontroller Hardware µPD703262HY µPD703263HY µPD70F3263HY µPD703272HY µPD703273HY µPD70F3273HY µPD703282HY µPD703283HY µPD70F3283HY Document No. U17644EJ1V0UD00 1st edition Date Published September 2005 N CP(K) |
Original |
V850ES/SG2 32-Bit PD703262HY PD703263HY PD70F3263HY PD703272HY PD703273HY PD70F3273HY PD703282HY PD703283HY | |
Contextual Info: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual |
Original |
240-Pin MT18KDF51272PDZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83aa70c0 kdf18c512x72pdz | |
Contextual Info: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module |
Original |
240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz | |
MICRON BGA PART MARKINGContextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate |
Original |
288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING | |
SpecTek
Abstract: S16008 IDD8 S80016LK7TW-8A 54-PIN S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232
|
Original |
128Mb: SymS80016LK7 S16008LK9 54-pin 60-ball PC100 PC133 S80016LK7TW-8A 09005aef807827f6 SpecTek S16008 IDD8 S80016LK7TW-8A S16008LK9 S40032LK8 S80016LK7 54pin TSOP SDRAM MA3232 | |
ba1sContextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data |
Original |
IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s | |
Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010E *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V. |
Original |
MN101C457 QFP044-P-1010E | |
PA120
Abstract: PC123 Series COM161 NJU6825
|
Original |
NJU6825 162COMMON 128RGB 096-COLOR NJU6825 832-bit 32-grayscale PA120 PC123 Series COM161 | |
MTI BDContextual Info: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A, MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • 184-pin dual in-line memory module DIMM • Utilizes 100 MHz and 133 MHz DDR SDRAM |
Original |
MT9VDDT872A, MT18VDDT1672A 184-pin 128MB MTI BD | |
k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
|
Original |
K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA | |
|
|||
MPC5533
Abstract: mpc5554 emios MPC500 MPC5500 MPC5534 MPC565
|
Original |
MPC5533 MPC5534 MPC5533 mpc5554 emios MPC500 MPC5500 MPC565 | |
Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. |
Original |
M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64 | |
Contextual Info: TinyPowerTM A/D Type Smart Card OTP MCU with DAC, ISO 7816 and USB Interfaces HT56RB27 Revision: 1.20 Date: April 26, 2013 Contents Table of Contents Technical Document .7 Features .7 |
Original |
HT56RB27 | |
Contextual Info: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU |
Original |
HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 | |
Contextual Info: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM |
Original |
HT67F30/HT67F40/HT67F50/HT67F60 | |
NUC100LE3AN
Abstract: NuMicroTM NUC100 series Technical Reference Manual NUC100RE3AN NUC100LD1BN NUC100RC1BN ARMv6-M NUC100LD2BN NUC100RD1BN 5 pin LDO IC - pd11 NUC100LC1BN
|
Original |
NUC100 32-BIT NUC100LE3AN NuMicroTM NUC100 series Technical Reference Manual NUC100RE3AN NUC100LD1BN NUC100RC1BN ARMv6-M NUC100LD2BN NUC100RD1BN 5 pin LDO IC - pd11 NUC100LC1BN | |
NUC122ZC1AN
Abstract: LQFP-64 footprint NUC122LD2AN QFN footprint
|
Original |
NUC122 32-BIT NUC122ZC1AN LQFP-64 footprint NUC122LD2AN QFN footprint | |
SGCT
Abstract: sgm switch MSM7586-01TS-K MSM7586-03TS-K P600 P900 TQFP100-P-1414-0 mcu dtmf generator
|
Original |
E2U0034-28-82 MSM7586-01/03 MSM7586 TQFP100-P-1414-0 SGCT sgm switch MSM7586-01TS-K MSM7586-03TS-K P600 P900 mcu dtmf generator | |
LA 7673
Abstract: amplifier b7 6368 LA 7830 k 717 PA120 NJU6825 NJU6825CJ 128xR display 7 seg
|
Original |
NJU6825 162-common 4096-Color NJU6825 4096-color. 128xRGB 832-bit 16-gradation LA 7673 amplifier b7 6368 LA 7830 k 717 PA120 NJU6825CJ 128xR display 7 seg | |
Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4 |
Original |
W94AD6KB W94AD2KB A01-004 |