IF TRANSFORMER 21.4 MHZ Search Results

315PV

Abstract: 68314 370-PH
Contextual Info: MODEL: EVEREST / NETPHY-1 LT 17M T Page 1 of 7 ELECTRO MA GNETIC TEST\ INC. 1547 P ly m o u th Street, M o u n tain V iew , C A 94043 Tel: 650 9 6 5 -4 0 0 0 Fax: (650) 9 6 5 -3 0 0 0 REPORT NO.: DATE: IA O IT I IX -I FCC PART 68 (PARTIAL TESTING) MEASUREMENT FORMS

application MOSFET transmitters fm

Abstract: TOROIDS Design Considerations mrf141g
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

TOROIDS Design Considerations

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141G

Abstract: TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter CO-AX mosfet HF amplifier motorola AN211A MRF141G data sheet AN211A
Contextual Info: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: Whol HEWLETT mLUM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150 MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage,

MSK5044RH

Contextual Info: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 http://www.mskennedy.com/ MSK Web Site: Application Note 014 MSK5044RH Evaluation Board User's Guide By Bob Abel & Paul Musil, MS Kennedy Corp.; Revised 9/19/2013

Contextual Info: Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150 MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage, high-gain silicon bipolar amplifier

Contextual Info: AVANTÉK INC ' M4E D H lim ih b 0007=133 3 S A V A UTO/UTC 104 Series Thin-Film Cascadable Amplifier 10 tO 150 MHz Æ R /A N T E K FEATURES APPLICATIONS • • • • • • • Low Frequency IF Stages • Medical Instruments: Ultra-Sound, Magnetic Resonance

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 150 MHz Technical Data UTO/UTC 104 Series Features Description Pin Configuration • Frequency Range: 10 to 150␣MHz UTO—TO-8T • High Efficiency or Battery Powered Systems The 104 Series is a single-stage,

ADL5534

Abstract: 1008CS-471XJLC AD9640 ADL5531 ADL5534ACPZ-R7 AN-772 MO-220-VHHB ADT2-1T-1P
Contextual Info: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 13 RFOUT1 15 NC 14 NC 16 RFIN1 FUNCTIONAL BLOCK DIAGRAM 12 CLIN1 NC 1 NC 3 BIAS ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 4 NC = NO CONNECT 06836-001 NC 2 RFIN2 5 Fixed gain of 20 dB Operation up to 500 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 13 RFOUT1 15 NC 14 NC 16 RFIN1 FUNCTIONAL BLOCK DIAGRAM 12 CLIN1 NC 1 BIAS NC 2 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 4 NC = NO CONNECT 06836-001 NC 3 ADL5534 RFIN2 5 Fixed gain of 20 dB Operation up to 500 MHz

LTC5590

Abstract: LTC5591 LTC5592 LTC5593 LTC5541 GSM1800 LTC5591IUH N4000-13 j364 LTE bandpass filter
Contextual Info: LTC5591 Dual 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer Description Features n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 1950MHz IIP3: 26.2dBm at 1950MHz Noise Figure: 9.9dB at 1950MHz 15.5dB NF Under 5dBm Blocking High Input P1dB 47dB Channel-to-Channel Isolation

Contextual Info: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 Data Sheet 13 RFOUT1 15 NC 16 RFIN1 12 CLIN1 NC 1 BIAS NC 2 NC 3 ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 6 RFIN2 5 NC 4 NC = NO CONNECT 06836-001 Fixed gain of 20 dB Operation up to 500 MHz Input/output internally matched to 50 Ω

Contextual Info: 20 MHz to 500 MHz Dual IF Amplifier ADL5534 Data Sheet 13 RFOUT1 15 NC 16 RFIN1 12 CLIN1 NC 1 BIAS NC 2 NC 3 ADL5534 BIAS 11 NC 10 NC 9 NC RFOUT2 8 CLIN2 7 NC 6 RFIN2 5 NC 4 NC = NO CONNECT 06836-001 Fixed gain of 20 dB Operation up to 500 MHz Input/output internally matched to 50 Ω

Contextual Info: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters IFGM IFOP IFON PWDN LEXT 20 19 18 17 16

Contextual Info: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters IFGM IFOP IFON PWDN LEXT 20

RO3003

Abstract: ADL5357ACPZ-R7
Contextual Info: 500 MHz to 1700 MHz Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun ADL5357 FEATURES APPLICATIONS Cellular base station receivers Transmit observation receivers Radio link downconverters FUNCTIONAL BLOCK DIAGRAM IFGM IFOP IFON PWDN LEXT 20 19 18 17 16

AD8342

Abstract: 400M 700M AD8351 AD8369
Contextual Info: Active Receive Mixer LF to 500 MHz AD8342 Broadband RF port: LF to 500 MHz Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Single-supply operation: 5 V @ 98 mA

MRF141G

Abstract: u 172 954 zener AN211A
Contextual Info: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

SU 179 transistor

Abstract: Motorola ic 1036 Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

arco 403

Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this