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    IF9220 Datasheets Context Search

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    if9220

    Abstract: TC227 irfu9220 IRFR9220 TB334
    Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		IRFR9220, IRFU9220 TA17502. if9220 TC227 irfu9220 IRFR9220 TB334 PDF

    if9220

    Abstract: TC227 irfu9220 IRFR9220
    Contextual Info: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model


    Original     		IRFR9220, IRFU9220 O-251AA IRFU9220 IRFR9220 170e-12 1e-30 73e-6) 95e-3 if9220 TC227 PDF

    TC227

    Abstract: irfu9220 IF9220 IRFR9220 TB334
    Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		IRFR9220, IRFU9220 TA17502. TC227 irfu9220 IF9220 IRFR9220 TB334 PDF

    TC227

    Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		IRFR9220, IRFU9220 TA17502. TC227 PDF

    TC227

    Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs


    Original     		IRFR9220, IRFU9220 TA17502. TC227 PDF

    TC227

    Abstract: TC1327 IF9220
    Contextual Info: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­


    OCR Scan     		IRFR9220, IRFU9220 05e-3 28e-5) 170e-12 1e-30 10TOX 73e-6) 95e-3 TC227 TC1327 IF9220 PDF