IGBT 1200V 40A Search Results
IGBT 1200V 40A Result Highlights (5)
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Description |
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| GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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| GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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| GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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| TLP5702H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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| TLP5705H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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IGBT 1200V 40A Datasheets Context Search
Catalog Datasheet |
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Contextual Info: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter |
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V23990-P629-L99-PM 200V/40A | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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IC110 IXYH40N120B3D1 183ns O-247 IF110 | |
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Contextual Info: Preliminary Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXYH40N120B3D1 IC110 183ns O-247 IF110 062in. | |
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Contextual Info: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between |
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APT40GR120B2DU30 | |
QR30Contextual Info: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 062in. QR30 | |
IXYH40N120C3Contextual Info: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 062in. IXYH40N120C3 | |
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Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode MMIX1Y100N120C3H1 VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 3.5V 110ns C G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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MMIX1Y100N120C3H1 IC110 110ns IF110 MMIX1Y100N120C3H1 | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 | |
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Contextual Info: Preliminary Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH40N120B3 IC110 183ns O-247 062in. 40N120B3 A-C91) | |
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Contextual Info: Advance Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH40N120B3 IC110 183ns O-247 062in. 40N120B3 A-C91) | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXYH40N120B3 183ns O-247 40N120B3 A-C91) | |
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Contextual Info: Advance Technical Information IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120B3D1 IC110 183ns O-247 IF110 062in. | |
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Contextual Info: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter |
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V23990-P629-L59-PM 200V/40A | |
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Contextual Info: V23990-P629-F73-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter |
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V23990-P629-F73-PM 200V/40A | |
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Contextual Info: July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • • Low saturation voltage: VCE sat , typ = 2.0V @ IC = 25A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction |
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FGA25N120ANTD/FGA25N120ANTD | |
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Contextual Info: Preliminary Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
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IXYR50N120C3D1 ISOPLUS247TM IF110 | |
IXYR50N120C3D1Contextual Info: Advance Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
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IF110 IXYR50N120C3D1 ISOPLUS247TM IXYR50N120C3D1 | |
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Contextual Info: IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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IXYH40N120B3 IC110 183ns O-247 40N120B3 A-C91) | |
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Contextual Info: IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
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IXYH40N120C3D1 O-247 IF110 13/1030A, | |
Ultra fast diodeContextual Info: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH20N120C3D1 IC110 108ns O-247 IF110 062in. Ultra fast diode | |
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Contextual Info: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN50N120C3H1 VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 |
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IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A | |
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Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IC110 IXYH20N120C3D1 108ns O-247 IF110 | |
ixgn50n120c3h1
Abstract: g50n IF110 g50n120c3
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IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A ixgn50n120c3h1 g50n IF110 g50n120c3 | |
IXGN82N120B3H1
Abstract: IXGN82N120 IF110 IXGN82N120B3H
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IXGN82N120B3H1 IC110 OT-227B, E153432 IF110 82N120B3H1 IXGN82N120B3H1 IXGN82N120 IF110 IXGN82N120B3H | |