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    IGBT 12N60A4 Search Results

    IGBT 12N60A4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 12N60A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT 12n60a4D

    Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. IGBT 12n60a4D 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTG*N60A4D ta49337

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original
    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGTG12N60A4D TB334

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS HGT1S12N60A4DS9A
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS9A

    12N60A4D

    Abstract: IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 HGTP12N60A4D TA49335 HGT1S12N60A4DS HGT1S12N60A4DS9A HGTG12N60A4D
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original
    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 TA49335 HGT1S12N60A4DS9A HGTG12N60A4D

    12N60A4D TRANSISTOR

    Abstract: No abstract text available
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original
    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D TRANSISTOR

    12n60a4

    Abstract: IGBT 12n60a4 12n60a HGTG12N60A4 12n60a4 pdf datasheet g12n60a4 HGT1S12N60A4S9A C110 HGT1S12N60A4S HGTP12N60A4
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


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    PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a 12n60a4 pdf datasheet g12n60a4 HGT1S12N60A4S9A C110 HGTP12N60A4

    12N60A4

    Abstract: IGBT 12n60a4 C110 HGT1S12N60A4S HGT1S12N60A4S9A HGTG12N60A4 HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet August 2002 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


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    PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12N60A4 IGBT 12n60a4 C110 HGT1S12N60A4S9A HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent

    12n60a4

    Abstract: 12n60a4 pdf datasheet IGBT 12n60a4 HGT1S12N60A4S G12N60A4 HGT1S12N60A4S9A C110 HGTG12N60A4 HGTP12N60A4 TA49335
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet November 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


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    PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 12n60a4 pdf datasheet IGBT 12n60a4 G12N60A4 HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335

    12n60a4

    Abstract: IGBT 12n60a4 HGT1S12N60A4S HGTG12N60A4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


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    PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334

    12n60a4

    Abstract: IGBT 12n60a4 12n60a4 pdf datasheet HGT1S12N60A4S9A HGTG12N60A4 HGTG12N60A4 equivalent 12n60a C110 HGTP12N60A4 LD26
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


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    PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A HGTG12N60A4 HGT1S12N60A4S9A 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a4 pdf datasheet HGTG12N60A4 equivalent 12n60a C110 HGTP12N60A4 LD26

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12n60a4

    Abstract: IGBT 12n60a4 12n60a TA49335 hgtg12n60a4 SS LSE 0530 T1S12N60A4S
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S D ata S h eet M ay 1999 F ile N u m b er 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    PDF HGTP12N60A4, HGTG12N60A4, T1S12N60A4S HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 12n60a TA49335 SS LSE 0530 T1S12N60A4S

    IGBT 12n60a4D

    Abstract: No abstract text available
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS TA49335. TA49371. 1-800-4-HARRIS IGBT 12n60a4D

    12n60a4

    Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    PDF TP12N60A4, 12N60A4, T1S12N60A4S HGTP12N60A4, HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 TP12N60A4 12n60a 12N60 transistor BT 139 F applications note