IGBT 300V Search Results

4mbi400vg

Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Contextual Info: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

PM15CMA060

Abstract: PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram
Contextual Info: International [regjRectifier provisional PD912£ PM15CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 2kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED"™ LHtrafast, Soft Recovery

pm20cma060

Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
Contextual Info: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery

4MBI300VG-120R-50

Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
Contextual Info: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

MITSUBISHI CM400

Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low

GAE75BA60

Contextual Info: IGBT MODULE GAE75BA60 UL;E76102 M SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.

7463

Abstract: APT32GU30B T0-247
Contextual Info: APT32GU30B 300V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

GAE75BA60

Contextual Info: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.

GAE100BA60

Abstract: GAE150BA60 GAE75BA60 sanrex IGBT GH-039 GH-038
Contextual Info: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.

7465

Abstract: APT83GU30B APT83GU30S UJ 45A diode
Contextual Info: APT83GU30B APT83GU30S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

ultrafast n channel 600v 20a IGBT

Contextual Info: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,

APT26GU30B

Abstract: T0-247 432F
Contextual Info: APT26GU30B APT26GU30B TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.

Contextual Info: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:

432F

Abstract: APT26GU30K APT26GU30SA
Contextual Info: APT26GU30K_SA APT26GU30K APT26GU30SA TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT TO-220 D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

igbt 150v 30a

Abstract: 7464 ic datasheet 60A 150V IGBT
Contextual Info: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: MIG150J202H TOSHIBA Integrated IGBT Module Silicon N Channel IGBT MIG150J202H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current,

IGBT full bridge

Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
Contextual Info: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:

IPM1560

Abstract: high side IGBT driver optocoupler
Contextual Info: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.

Contextual Info: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications

74hc06

Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Contextual Info: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路

Contextual Info: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 20A/600V IGBT