IGBT 45 F 122 Search Results
IGBT 45 F 122 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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TLP5702H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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TLP5705H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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IGBT 45 F 122 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CM75TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT NX-Series Module 75 Amperes/1200 Volts A E F Q K G K K K K AA AB C K K K M J AE AF AD M M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 |
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CM75TX-24S Amperes/1200 | |
K3029
Abstract: CM75TX-24S
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CM75TX-24S Amperes/1200 CM75TX-24S K3029 | |
DATASHEET OF IC 741
Abstract: INVERTER 50 kW V23990-P86 flowPACK function of igbt inverter schematic latest INVERTER DESIGN PDF DATASHEET Power INVERTER schematic circuit
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V23990-P863-F49/F48-PM 00V/20A V23990-P863-F49-PM: V23990-P863-F48-PM: DATASHEET OF IC 741 INVERTER 50 kW V23990-P86 flowPACK function of igbt inverter schematic latest INVERTER DESIGN PDF DATASHEET Power INVERTER schematic circuit | |
ACPL-5160
Abstract: smd transistor t1A 93 TRANSISTOR SMD MARKING CODE t2a smd transistor t1A 66 smd transistor t1A 59 TRANSISTOR SMD MARKING CODE 3K TF0123 5161 common anode 516X ion gold detector
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ACPL-5160, ACPL-5161 MIL-PRF-38534 AV02-3964EN ACPL-5160 smd transistor t1A 93 TRANSISTOR SMD MARKING CODE t2a smd transistor t1A 66 smd transistor t1A 59 TRANSISTOR SMD MARKING CODE 3K TF0123 5161 common anode 516X ion gold detector | |
Contextual Info: V23990-P860-F49/F48-PM preliminary datasheet flowPACK 0 3rd gen 1200V/35A Features flow0 housing Ɣ 2 clip housing in 12mm and 17mm height Ɣ Trench Fieldstop IGBT4 technology Ɣ Compact and low inductance design Ɣ Built-in NTC Target Applications Schematic |
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V23990-P860-F49/F48-PM 200V/35A V23990-P860-F49-PM: V23990-P860-F48-PM: | |
full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
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FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
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D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd | |
FS450R12KE3 S1
Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
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E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 | |
Contextual Info: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x . |
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CM75MXA-24S UL1557, E323585 | |
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
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DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor | |
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
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4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 | |
Contextual Info: Power Module 600V 100A IGBT Module MG06100S-BR1MM RoHS Features • Ultra Low Loss • P ositive Temperature Coefficient • High Ruggedness • W ith Fast Free-Wheeling Diodes • H igh Short Circuit Capability Applications • SMPS and UPS • Converter |
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MG06100S-BR1MM E71639 | |
Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 4 ,- . $ 4 +?- . $;B ,-.! * "22 +@- % A2 . +-2 % :22 % C ,2 4 +-2 . " 7 ,- . +-2 % A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?- |
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145GB066D 11Typ. | |
Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 4 ,- . $ 4 +?- . $;B ,-.! * "22 +@- % A2 . +-2 % :22 % C ,2 4 +-2 . " 7 ,- . +-2 % A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?- |
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145GB066D 11Typ. | |
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145GB066DContextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 4 ,- . $ 4 +?- . $;B ,-.! * "22 +@- % A2 . +-2 % :22 % C ,2 4 +-2 . " 7 ,- . +-2 % A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?- |
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145GB066D 11Typ. 145GB066D | |
Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 4 ,- . $ 4 +?- . $;B ,-.! * "22 +@- % A2 . +-2 % :22 % C ,2 4 +-2 . " 7 ,- . +-2 % A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?- |
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145GB066D 11Typ. | |
Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 4 ,- . $ 4 +?- . $;B ,-.! * "22 +@- % A2 . +-2 % :22 % C ,2 4 +-2 . " 7 ,- . +-2 % A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?- |
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145GB066D 11Typ. | |
Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES |
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VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE 600 V VCES |
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VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES |
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VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
145GB066D
Abstract: SKM145GB066D Semitrans Semikron
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145GB066D 145GB066D SKM145GB066D Semitrans Semikron | |
RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
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0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 | |
145GB066D
Abstract: SKM145GB066D
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145GB066D 11Typ. 145GB066D SKM145GB066D | |
torque for SELF TAPPING SCREWContextual Info: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x . |
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CM75MXA-24S UL1557, E323585 torque for SELF TAPPING SCREW |