IGBT 600V 15A Search Results

IGBT 600V 15A Result Highlights (5)

Part	Manufacturer	Description
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS

IGBT 600V 15A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
600v 15a Abstract: igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A	Original	15LS-060 600v 15a igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A	PDF
600v Abstract: igbt igbt 600V Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 972 733-1700 - www.fujisemiconductor.com	Original	15LS-060 600v igbt igbt 600V	PDF
igbt 600V Abstract: 15LS-060 6MBI 15LS-060 Contextual Info: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com	Original	15LS-060 igbt 600V 15LS-060 6MBI 15LS-060	PDF
Contextual Info: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A	Original	SIGC14T60NC Q67050-A4135A001 7232-M,	PDF
Contextual Info: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A	Original	SIGC14T60NC Q67050-A4135A001 7232-M,	PDF
Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3	Original	APTGV30H60T3G	PDF
APT0406 Abstract: APT0502 APTGV30H60T3G Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter	Original	APTGV30H60T3G APT0406 APT0502 APTGV30H60T3G	PDF
IXGH36N60B3C1 Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES	Original	IC110 IXGH36N60B3C1 100ns 40kHz O-247 36N60B3C1 IXGH36N60B3C1	PDF
75N60 Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR	Original	IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60	PDF
Contextual Info: Preliminary SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives	Original	SIGC14T60NC Q67050-A4135sawn 7232-M,	PDF
7232-E Contextual Info: Preliminary SIGC14T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60N 600V This chip is used for: • IGBT Modules G Applications: • drives	Original	SIGC14T60N Q67041-A4689A001 320es 7232-E, 7232-E	PDF
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR	Original	IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3	PDF
IXGH36N60B3C1 Abstract: IF110 g36n60b3c1 Schottky Diode 400V 15A Contextual Info: Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES	Original	IXGH36N60B3C1 IC110 100ns 40kHz O-247 36N60B3C1 IXGH36N60B3C1 IF110 g36n60b3c1 Schottky Diode 400V 15A	PDF
SIGC14T60NC Contextual Info: Preliminary SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives	Original	SIGC14T60NC Q67050-A4135A001 3200in 7232-M, SIGC14T60NC	PDF

APT0406 Abstract: APT0502 NTC 10 thermistor Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies	Original	APTCV60TLM24T3G APT0406 APT0502 NTC 10 thermistor	PDF
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 IC110 O-263 O-220 36N60A3 7-03-08-A	PDF
ixgh48n60c3c1 Abstract: IXGH48N60 48n60 IF110 48N60C3 Contextual Info: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings	Original	IXGH48N60C3C1 IC110 100kHz O-247 IF110 48N60C3C1 ixgh48n60c3c1 IXGH48N60 48n60 IF110 48N60C3	PDF
g36N60a Abstract: diode fr 307 IF110 Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR	Original	IXGH36N60A3D4 IC110 O-247 IF110 8-06B g36N60a diode fr 307 IF110	PDF
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.4V IXGH36N60A3D4 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR	Original	IC110 IXGH36N60A3D4 O-247 IF110 8-06B	PDF
mig15j Abstract: 15j80 Contextual Info: TOSHIBA TENTATIVE M IG 15J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 15A/600V IGBT	OCR Scan	15J805 MIG15J805 5A/600V 961001EAA1 mig15j 15j80	PDF
Contextual Info: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600	Original	IXGH48N60C3C1 IC110 100kHz O-247 IF110 48N60C3C1	PDF
50N60C3 Contextual Info: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C	Original	IXXH50N60C3D1 IC110 O-247 IF110 50N60C3	PDF
GV 265 diode Abstract: CM15MD-12H E80276 Contextual Info: MITSUBISHI IGBT MODULES CM15MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM15MD-12H ¡IC . 15A ¡VCES . 600V ¡Insulated Type	Original	CM15MD-12H E80276 E80271 GV 265 diode CM15MD-12H E80276	PDF
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	IC110 IXXH75N60C3D1 O-247 IF110 75N60C3	PDF

IGBT 600V 15A Search Results

IGBT 600V 15A Result Highlights (5)

IGBT 600V 15A Datasheets Context Search

600v 15a

600v

igbt 600V

APT0406

IXGH36N60B3C1

75N60

7232-E

IXGH36N60B3C1

SIGC14T60NC

APT0406

ixgh48n60c3c1

g36N60a

mig15j

50N60C3

GV 265 diode