IGBT DIE 1200V Search Results

Contextual Info: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and

5SMY 86M1730

Abstract: ac130
Contextual Info: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

for IR IGBT die

Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
Contextual Info: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C

BUP213

Abstract: SIGC25T120C
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

bup213

Abstract: BUP21
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

L7151

Contextual Info: SIGC42T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 314 C Applications:  drives G Chip Type VCE IC Die Size

Contextual Info: SIGC42T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 314 C Applications:  drives G Chip Type VCE IC Die Size

IRGC100B120UB

Abstract: 1kA IGBT
Contextual Info: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

2 SK 0243

Contextual Info: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.

POWER MODUL SEMIKRON

Abstract: infineon igbt3 1200v 1200-V-Versionen 1200V-IGBT 400GD MiniSKiiP 1 Package semikron IGBT skiip Semikron Semitop 3 footprint semikron skim 1200VIGBT
Contextual Info: low profile – high power – less parts to deal with SKiM - ein neuer Industriestandard für IGBT-Module in SKiiP-Technologie Autor: Rickmer Heubeck, SEMIKRON International Abstract Für die Aufbau- und Verbindungstechnik von Leistungshalbleiter-Modulen werden hohe

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

IRGC25B120KB

Abstract: 1kA IGBT
Contextual Info: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

IRGC100B120KB

Abstract: 4kA IGBT
Contextual Info: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

IRGPS60B120KD

Abstract: IRGC49B120KB
Contextual Info: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

SK 5207

Contextual Info: PD - 94562 IRGC16B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

IRGC75B120KB

Abstract: 0443 IC HA-1370S
Contextual Info: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

Contextual Info: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

IRGC50B120KB

Contextual Info: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

NGT 05

Abstract: 300c motor 300C IRGC5B120KB
Contextual Info: PD - 94314 IRGC5B120KB IRGC5B120KB IGBT Die in Wafer Form Features • GEN5 Non Punch Through NPT Technology • Low VCE(on) • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient Benefits • Benchmark Efficiency for Motor Control

300C

Abstract: IRGC8B120UB
Contextual Info: PD -94317 IRGC8B120UB IRGC8B120UB IGBT Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology UltraFast 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient 1200 V IC(nom) = 8A VCE(on) typ. = 3.63V @