IGBT FLASH Search Results

IGBT

Abstract: IC FOR FLASHER MITSUBISHI IGBT 8f diode CY20AAJ-8F mitsubishi SOP
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8F CY20AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V

strobe IGBT

Abstract: CY25AAJ-8
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V

igbt CY25AAJ-8F

Abstract: IC for electronic flasher strobe trigger strobe IGBT 8f diode IGBT application notes CY25AAJ-8F IC FOR FLASHER
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V

CY20AAJ-8

Abstract: strobe IGBT
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8 CY20AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V

strobe IGBT

Abstract: IGBT 2000 strobe trigger CY25AAJ-8 MITSUBISHI IGBT
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY25AAJ-8 CY25AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm

strobe IGBT

Abstract: camera flasher CY20AAJ-8 igbt mitsubishi
Contextual Info: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY20AAJ-8 CY20AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm

TTRN-3825H

Contextual Info: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%

4kv flash trigger coil 4 pin

Abstract: toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822
Contextual Info: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%

Contextual Info: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.

"IGBT Driver"

Abstract: igbt driver Diagram igbt flash igbt protection circuit diagram xenon driver -flash circuit diagram for igbt driver igbt flash POWER SUPPLY FOR XENON LAMP MM3456 trigger coil
Contextual Info: MITSUMI Photoflash Charge IC with a built-in IGBT driver MM3456 Photoflash Charge IC with a built-in IGBT driver Monolithic IC MM3456 Outline This IC is a photoflash charge IC with a built-in IGBT driver, which has functions to charge photoflash capacitors and flash xenon tubes of digital still cameras and cell phones.

Contextual Info: NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is

KG3B-35-5

Abstract: WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1
Contextual Info: Mounting Instructions and Application Notes for IGBT modules V1.0 ESD handling instructions SEMiXTM IGBT modules are devices sensitive to electrostatic discharge on the gates. To avoid electrostatic discharge on the gate which could destroy the IGBT-MOS gate, the module is

Contextual Info: NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is

3b0565

Abstract: KIT_XC2785X_SK TC1167
Contextual Info: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing

Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

25N120FL

Contextual Info: NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

11n120

Abstract: g11n120 G11N120CN SC-15 11N120C TA49291 11n120* data sheet HGTP11N120CN HGT1S11N120CNS HGT1S11N120CNS9A
Contextual Info: HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

G40N120FL2

Contextual Info: NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited