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    IGBT G Search Results

    IGBT G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J341
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IGBT G Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IGBT Guide
    International Rectifier IGBT Selection Guide Original PDF 83.04KB 11
    SF Impression Pixel

    IGBT G Price and Stock

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    onsemi SECO-LVDCDC3064-IGBT-GEVB

    EVAL BOARD FOR NCV3064
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SECO-LVDCDC3064-IGBT-GEVB Box 1
    • 1 $39.73
    • 10 $39.73
    • 100 $39.73
    • 1000 $39.73
    • 10000 $39.73
    Buy Now
    Avnet Americas SECO-LVDCDC3064-IGBT-GEVB Bulk 111 Weeks 17
    • 1 -
    • 10 -
    • 100 $39.46
    • 1000 $38.00
    • 10000 $38.00
    Buy Now
    Mouser Electronics SECO-LVDCDC3064-IGBT-GEVB
    • 1 $39.73
    • 10 $39.73
    • 100 $39.73
    • 1000 $39.73
    • 10000 $39.73
    Get Quote
    Newark SECO-LVDCDC3064-IGBT-GEVB Bulk 1 1
    • 1 $38.92
    • 10 $38.92
    • 100 $38.92
    • 1000 $38.92
    • 10000 $38.92
    Buy Now

    Infineon Technologies AG EVALM7HVIGBTPFCINV4TOBO1

    Power Management IC Development Tools iMOTION MADK evaluation board for TRENCHSTOP RCD2 IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALM7HVIGBTPFCINV4TOBO1 6
    • 1 $68.75
    • 10 $68.75
    • 100 $68.75
    • 1000 $68.75
    • 10000 $68.75
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    Infineon Technologies AG EVALM7HVIGBTPFCINV1TOBO1

    Power Management IC Development Tools iMOTION MADK evaluation board for TRENCHSTOP RCD2 IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALM7HVIGBTPFCINV1TOBO1 4
    • 1 $68.75
    • 10 $68.75
    • 100 $68.75
    • 1000 $68.75
    • 10000 $68.75
    Buy Now

    Infineon Technologies AG EVALM5IGBT7TOBO1

    Power Management IC Development Tools 650 V TRENCHSTOP IGBT 7 T7 evaluation board optimized for GPD / Servo drives and aircon PFC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALM5IGBT7TOBO1 3
    • 1 $760.10
    • 10 $760.10
    • 100 $760.10
    • 1000 $760.10
    • 10000 $760.10
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    Infineon Technologies AG EVALM7HVIGBTINVTOBO1

    Power Management IC Development Tools iMOTION MADK Evaluation board for TRENCHSTOP RCD2 IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALM7HVIGBTINVTOBO1
    • 1 $69.00
    • 10 $69.00
    • 100 $69.00
    • 1000 $69.00
    • 10000 $69.00
    Get Quote

    IGBT G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Technische Information / technical information FD600R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FD600R17KF6C PDF

    55F32

    Abstract: FD1600 1200R ulw diode
    Contextual Info: Technische Information / technical information FD1600/1200R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter


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    FD1600/1200R17KF6C 55F32 FD1600 1200R ulw diode PDF

    IGBT FF 300

    Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    FF400R17KF6CB2

    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    FZ800R17KF6CB2

    Abstract: KF6C
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    FF400R17KF6CB2

    Abstract: IGBT FF 300 igbt ff 75 r
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r PDF

    FF400R17KF6CB2

    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    eupec igbt

    Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    IGBT module FZ 1200

    Abstract: KF6C FZ800R17KF6CB2
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 PDF

    diode 1700v

    Abstract: FZ800R17KF6CB2
    Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


    Original
    PDF

    Insulated Gate Bipolar Transistors

    Abstract: igbt
    Contextual Info: SCSOA IGBT S-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated


    Original
    PDF

    Contextual Info: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2


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    10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A PDF

    SCR Inverter

    Contextual Info: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.


    Original
    SPM1003 SCR Inverter PDF

    Insulated Gate Bipolar Transistors

    Abstract: igbt transistors IGBT ixys igbt
    Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1


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    PDF

    fz1200r33kf2c-b5

    Abstract: tk 69 FZ1200R33KF2C uv1800 k4369
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C_B5 Gehäuse vom 6,5kV Modul housing from 6,5kV Module Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    FZ1200R33KF2C fz1200r33kf2c-b5 tk 69 uv1800 k4369 PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


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    O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF

    j2kl

    Abstract: kc 60 6C12 FZ1000R33HL3 p605
    Contextual Info: Technische Information / technical information FZ1000R33HL3 IGBT-Module IGBT-modules IGBT3 mit Feldstopp und Trench im IHM-B Gehäuse IGBT3 with field stop and trench in IHM-B housing IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data


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    FZ1000R33HL3 j2kl kc 60 6C12 FZ1000R33HL3 p605 PDF

    75-06A7T

    Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
    Contextual Info: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT


    OCR Scan
    30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044 PDF

    diode 12A3

    Abstract: 7512a3
    Contextual Info: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160


    OCR Scan
    page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3 PDF

    Y1600

    Abstract: FS800R06A2E3
    Contextual Info: Technische Information / technical information FS800R06A2E3 IGBT-Module IGBT-modules HybridPACK2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter


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    FS800R06A2E3 Y1600 FS800R06A2E3 PDF

    FF200R12KT3

    Abstract: FF200R12KT3_E
    Contextual Info: Technische Information / technical information FF200R12KT3_E IGBT-Module IGBT-modules 62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values


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    FF200R12KT3 FF200R12KT3_E PDF

    FF300R12KT3

    Abstract: FF300R12KT3_E
    Contextual Info: Technische Information / technical information FF300R12KT3_E IGBT-Module IGBT-modules 62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values


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    FF300R12KT3 FF300R12KT3_E PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


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    PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


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    00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module PDF