IGBT G Search Results
IGBT G Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS |
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IGBT G Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IGBT Guide | International Rectifier | IGBT Selection Guide | Original | 83.04KB | 11 |
IGBT G Price and Stock
onsemi SECO-LVDCDC3064-IGBT-GEVBEVAL BOARD FOR NCV3064 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SECO-LVDCDC3064-IGBT-GEVB | Box | 1 |
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SECO-LVDCDC3064-IGBT-GEVB | Bulk | 111 Weeks | 17 |
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SECO-LVDCDC3064-IGBT-GEVB |
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SECO-LVDCDC3064-IGBT-GEVB | Bulk | 1 | 1 |
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Infineon Technologies AG EVALM7HVIGBTPFCINV4TOBO1Power Management IC Development Tools iMOTION MADK evaluation board for TRENCHSTOP RCD2 IGBT |
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EVALM7HVIGBTPFCINV4TOBO1 | 6 |
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Infineon Technologies AG EVALM7HVIGBTPFCINV1TOBO1Power Management IC Development Tools iMOTION MADK evaluation board for TRENCHSTOP RCD2 IGBT |
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EVALM7HVIGBTPFCINV1TOBO1 | 4 |
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Infineon Technologies AG EVALM5IGBT7TOBO1Power Management IC Development Tools 650 V TRENCHSTOP IGBT 7 T7 evaluation board optimized for GPD / Servo drives and aircon PFC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EVALM5IGBT7TOBO1 | 3 |
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Infineon Technologies AG EVALM7HVIGBTINVTOBO1Power Management IC Development Tools iMOTION MADK Evaluation board for TRENCHSTOP RCD2 IGBT |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EVALM7HVIGBTINVTOBO1 |
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IGBT G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Technische Information / technical information FD600R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter |
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FD600R17KF6C | |
55F32
Abstract: FD1600 1200R ulw diode
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FD1600/1200R17KF6C 55F32 FD1600 1200R ulw diode | |
IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
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FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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FZ800R17KF6CB2
Abstract: KF6C
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
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FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r | |
FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
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FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 | |
diode 1700v
Abstract: FZ800R17KF6CB2
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Insulated Gate Bipolar Transistors
Abstract: igbt
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Contextual Info: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2 |
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10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A | |
SCR InverterContextual Info: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. |
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SPM1003 SCR Inverter | |
Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
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fz1200r33kf2c-b5
Abstract: tk 69 FZ1200R33KF2C uv1800 k4369
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FZ1200R33KF2C fz1200r33kf2c-b5 tk 69 uv1800 k4369 | |
40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
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O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 | |
j2kl
Abstract: kc 60 6C12 FZ1000R33HL3 p605
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FZ1000R33HL3 j2kl kc 60 6C12 FZ1000R33HL3 p605 | |
75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
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OCR Scan |
30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044 | |
diode 12A3
Abstract: 7512a3
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OCR Scan |
page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3 | |
Y1600
Abstract: FS800R06A2E3
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FS800R06A2E3 Y1600 FS800R06A2E3 | |
FF200R12KT3
Abstract: FF200R12KT3_E
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FF200R12KT3 FF200R12KT3_E | |
FF300R12KT3
Abstract: FF300R12KT3_E
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FF300R12KT3 FF300R12KT3_E | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 | |
calculation of IGBT snubber
Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
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00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module |