IGBT GATE Search Results
IGBT GATE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS |
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IGBT GATE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Insulated Gate Bipolar Transistors
Abstract: igbt
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Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
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Insulated Gate Bipolar TransistorsContextual Info: n ix Y S HIPerFASÎ IGBT 0-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 1 X Ki: |
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
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O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 | |
75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
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30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044 | |
diode 12A3
Abstract: 7512a3
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page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3 | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 | |
IGBT Guide
Abstract: KA3160 IGBT gate drivers igbt KA3161 DIP8
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KA3160 KA3161 KA3162 IGBT Guide IGBT gate drivers igbt DIP8 | |
4mbi400vg
Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
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4MBI400VG-060R-50 4mbi400vg 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. FEATURES * A high current can directly drive IGBT |
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UA8316 UA8316 -200mA UA8316L-G07-T UA8316G-G07-T QW-R122-010 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode. |
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IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles) | |
IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
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FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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FZ800R17KF6CB2
Abstract: KF6C
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FF400R17KF6CB2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values |
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
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FZ800R17KF6CB2 IGBT module FZ 1200 KF6C FZ800R17KF6CB2 | |
diode 1700v
Abstract: FZ800R17KF6CB2
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IGBT parallel
Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
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CHMC IC
Abstract: CHMC D8316 D8316 chmc LTAGE D831 chmc si1 chmc so2 si103
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D8316 D8316 -200mA 5600pF V/50kHz CHMC IC CHMC D8316 chmc LTAGE D831 chmc si1 chmc so2 si103 | |
FP15R12W1T4Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage |
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FP15R12W1T4 | |
FP10R12W1T4Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage |
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FP10R12W1T4 | |
IGPT CIRCUIT
Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
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HCPL-3160 HCPL-3160 SO-16 IGPT CIRCUIT IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT | |
IGBT Gate Drive Optocoupler
Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
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HCPL-3160 HCPL-3160 SO-16 IGBT Gate Drive Optocoupler IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL316 |