IGBT I RMS 45A Search Results

ixgq90n27

Abstract: IXGQ90N27PB IXgq90n TO-3P package
Contextual Info: Preliminary Technical Information PolarTM VCES = = ICP VCE sat ≤ IXGQ90N27PB IGBT for PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM TO-3P 270 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICPEAK I C(RMS) TJ ≤ 150°C, tp ≤ 1 s, D ≤ 1%

Contextual Info: r z 7 s g s -th o m s o n “ 7# l * ^ m [ E O T Q * S S T T A 9 0 1 2 T ( V ) 1 /2 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 45A V rrm 1200V trr (typ) 65ns V f (max) 1.85V STTA9012T(V)1 STTA9012T(V)2

mosfet 1200V 40A

Abstract: smps 45 watts
Contextual Info: STTA9012T V 1/2  TURBOS WITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012T(V)1 STTA9012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

STTA9012TV1

Abstract: STTA9012TV2
Contextual Info: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

STTA9012TV1

Abstract: STTA9012TV2 fr diode 205
Contextual Info: STTA9012TV1/2  TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

STTA9012TV1

Abstract: STTA9012TV2
Contextual Info: STTA9012TV1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012TV1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

stta9012tv2

Abstract: STTA9012TV1
Contextual Info: STTA9012TV1/2  TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: APT45GR65B2DU30 APT45GR65B2DU30 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: STTA9012TV1 STTA9012TV2 TRANSISTOR mosfet k2
Contextual Info: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: £ ÿ j SGS-THOMSON n o œ ilL IO rae Q ïlB C i S T T A 9 0 1 2 T V 1/2 TURBOSW ITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av ) 45A V rrm 1200V PRELIMINARY DATA K2 O if K1 trr (typ) 65ns V f (max) 1.85V K1 A2 TÜ ZJA1

mosfet 600V 50A

Contextual Info: rz7 SGS-THOMSON Ä 7# M ûœ ËŒ O T «® S T T A 9 0 1 2 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 45A I f (a v ) V (typ) 65ns Vf (max) 1.85V K2 A2 K1 A1 A2 Kl IE O 1200V rrm trr PRELIM IN ARY DATA

Contextual Info: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

data sheet IC 7447

Abstract: ic 7447 IC 7447 data sheet IC 7447 A 7447 ic datasheet 7447 IC 7447 DATASHEET IC 7447 specification IC 7447 data sheet free DATA SHEET 7447
Contextual Info: APT11GP60BDQB APT11GP60BDQB TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

ic 7445

Abstract: APT45GP120JDQ2 IC 7445 datasheet APT10035LLL max3995
Contextual Info: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT45GP120B2DF2

Abstract: APT30DF120
Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT30DF120

Contextual Info: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC 7432

Abstract: Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432
Contextual Info: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES 1200VAPT15GT120B_SRDQ1 G APT15GT120BRDQ1 APT15GT120SRDQ1 APT15GT120BRDQ1G* APT15GT120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

Contextual Info: TYPICAL PERFORMANCE CURVES 1200VAPT15GT120B_SRDQ1 G APT15GT120BRDQ1 APT15GT120SRDQ1 APT15GT120BRDQ1G* APT15GT120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

3000 0442

Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
Contextual Info: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT15GT120BRDQ1G

Abstract: APT10078BLL APT15GT120BRDQ1
Contextual Info: APT15GT120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT15GT120BRDQ1 APT15GT120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

APT15GT60BRDQ1

Abstract: APT15GT60BRDQ1G APT6017LLL
Contextual Info: TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1 G 600V APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast