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    IGBT MG50J2YS40 Search Results

    IGBT MG50J2YS40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    GT40J322
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 40 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT MG50J2YS40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mg50j2ys40

    Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
    Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)


    OCR Scan     		2YS40 MG50J2YS40) 35//S 2-94D1A MG50J2YS40 MG50J2YS40 2VS40) IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 PDF

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45 PDF