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    IGBT PNP Search Results

    IGBT PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet
    TTA014
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold Datasheet

    IGBT PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h PDF

    Application Note 91

    Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
    Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect


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    24-Oct-11 Application Note 91 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp PDF

    bsm 25 gd 1200 n2

    Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
    Contextual Info: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich


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    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Contextual Info: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


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    20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging PDF

    igbt inverter welder schematic

    Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
    Contextual Info: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated


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    IGBT-01 UL94VO, igbt inverter welder schematic inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure PDF

    siemens igbt chip

    Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
    Contextual Info: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional


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    MITSUBISHI CM300

    Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
    Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    20kHz MITSUBISHI CM300 MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt PDF

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Contextual Info: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


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    AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840 PDF

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Contextual Info: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


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    AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S PDF

    MG100J2YS40

    Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
    Contextual Info: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n


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    shockley diode

    Abstract: shockley diode application diode shockley shockley shockley diode datasheet inverter circuits explained IGBT inverter calculation mosfet triggering circuit for inverter Semiconductor Group igbt shockley diode high voltage and high current
    Contextual Info: The Reverse Behavior of the NPT-IGBT in its On-State 1 Reverse States of the IGBT in Inverter Circuits Causes for Reverse States The use of the IGBT in inverter circuits does not come without its problems. During the switching cycle the signs of current and voltage applied to the switching device change


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    INT-944

    Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
    Contextual Info: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


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    AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v PDF

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Contextual Info: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


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    AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983 PDF

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


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    a316j

    Abstract: HCPL-316J hcpl 316j dc motor control a-316j IGBT motor DRIVER SCHEMATIC hcpl IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE 316J E55361 BYV99
    Contextual Info: 2.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Technical Data HCPL-316J Features • “Soft” IGBT Turn-off • Integrated Fail-Safe IGBT Protection – Desat (VCE) Detection – Under Voltage Lock-Out


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    HCPL-316J SO-16 5968-5854E 5989-0784EN a316j HCPL-316J hcpl 316j dc motor control a-316j IGBT motor DRIVER SCHEMATIC hcpl IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE 316J E55361 BYV99 PDF

    a316j

    Abstract: VUVLO10 IGBT DRIVER SCHEMATIC hcpl IGBT motor DRIVER SCHEMATIC hcpl HCPL-316J nf 750 5989-0784EN A 316J
    Contextual Info: 2.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Technical Data HCPL-316J Features • “Soft” IGBT Turn-off • Integrated Fail-Safe IGBT Protection – Desat (VCE) Detection – Under Voltage Lock-Out


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    SO-16 HCPL-316J 5968-5854E 5989-0784EN a316j VUVLO10 IGBT DRIVER SCHEMATIC hcpl IGBT motor DRIVER SCHEMATIC hcpl HCPL-316J nf 750 5989-0784EN A 316J PDF

    316j

    Abstract: HCPL-316J HP 316J A 316j pi150 a316j a-316j IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE E55361
    Contextual Info: 2.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Technical Data HCPL-316J Features • “Soft” IGBT Turn-off • Integrated Fail-Safe IGBT Protection – Desat (VCE ) Detection – Under Voltage Lock-Out


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    HCPL-316J SO-16 5966-2496E 5968-5854E 316j HCPL-316J HP 316J A 316j pi150 a316j a-316j IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC 3 PHASE E55361 PDF

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U PDF

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT PDF

    FOD8316

    Abstract: FOD8318 FOD8332
    Contextual Info: FOD8332 Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, and Active Miller Clamp Features Description • Input LED Drive Facilitates Receiving Digitally The FOD8332 is an advanced 2.5 A output current IGBT


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    FOD8332 FOD8332 SOIC-16L FOD8316 FOD8318 PDF

    ACPL-332J

    Abstract: optocoupler ic HCPL-316J Q912 HCPL316J mossfet driver 332j A 332J AIR FLOW DETECTOR CIRCUIT DIAGRAM pcb layout the calculation of the power dissipation for the IGBT
    Contextual Info: Gate Drive Optocoupler Basic Design for IGBT / MOSFET Applicable to All Gate Drive Optocouplers Application Note 5336 Introduction IGBT/MOSSFET Gate Resistor This application note covers the topic of calculating gate driver power and thermal dissipation of the gate drive


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    AV02-0421EN ACPL-332J optocoupler ic HCPL-316J Q912 HCPL316J mossfet driver 332j A 332J AIR FLOW DETECTOR CIRCUIT DIAGRAM pcb layout the calculation of the power dissipation for the IGBT PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


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    AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    HP 316J

    Abstract: A 316J HP-316J HCPL-316J application note HCPL-316J 316J 316j application 788J HCPL-316J #500 1N4004 1N4007
    Contextual Info: 2.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Technical Data HCPL-316J Features • “Soft” IGBT Turn-off • Integrated Fail-Safe IGBT Protection – Desat (VCE ) Detection – Under Voltage Lock-Out


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    HCPL-316J SO-16 5965-8275E HP 316J A 316J HP-316J HCPL-316J application note HCPL-316J 316J 316j application 788J HCPL-316J #500 1N4004 1N4007 PDF

    a316j

    Abstract: HCPL-316J A 316j 316j application IGBT DRIVER SCHEMATIC hcpl 316j dc motor control IGBT motor DRIVER SCHEMATIC hcpl 316J E55361 hcpl316j
    Contextual Info: 2.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Technical Data HCPL-316J Features • “Soft” IGBT Turn-off • Integrated Fail-Safe IGBT Protection – Desat (VCE ) Detection – Under Voltage Lock-Out


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    HCPL-316J SO-16 5989-0784EN 5989-2143EN a316j HCPL-316J A 316j 316j application IGBT DRIVER SCHEMATIC hcpl 316j dc motor control IGBT motor DRIVER SCHEMATIC hcpl 316J E55361 hcpl316j PDF