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    IGBT QUALIFICATION CIRCUIT Search Results

    IGBT QUALIFICATION CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    IGBT QUALIFICATION CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability


    Original     		PDF IRG7RA13UPbF IGBJESD47F JSTD020D

    50b60pd

    Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E 50b60pd 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER

    Untitled

    Abstract: No abstract text available
    Text: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		PDF AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible

    IGBT 4000V

    Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
    Text: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K AUIRGSL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		PDF AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET


    Original     		PDF 6306A AUIRGP50B60PD1 AUIRGP50B60PD1E

    Untitled

    Abstract: No abstract text available
    Text: DR3 Final Version Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features • • • • • • • • • Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout


    Original     		PDF AUIR08152S AUIR08152

    Untitled

    Abstract: No abstract text available
    Text: Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features •         Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout Full time ON capability


    Original     		PDF AUIR08152S AUIR08152

    Untitled

    Abstract: No abstract text available
    Text: PD - 96306 AUTOMOTIVE GRADE AUIRGP50B60PD1 WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ


    Original     		PDF AUIRGP50B60PD1

    AUGP4063D

    Abstract: AUIRGP4063D IGBT 4000V AU406
    Text: PD - 97629 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF AUIRGP4063D AUIRGP4063D-E AUGP4063D IGBT 4000V AU406

    irgp4086

    Abstract: IRGP4086PBF igbt display plasma IRFPE30
    Text: PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


    Original     		PDF IRGP4086PbF O-247AC irgp4086 IRGP4086PBF igbt display plasma IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features • Low VCE ON Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics


    Original     		PDF IRGR2B60KDPbF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF AUIRGP4063D AUIRGP4063D-E

    cii 117 q

    Abstract: ic 5657
    Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA


    Original     		PDF IRGP4078DPbF IRGP4078D-EP IRGP4078D-EPbF O-247AC O-247AD JESD47F) cii 117 q ic 5657

    100A6

    Abstract: IRGP4078DPBF
    Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA


    Original     		PDF IRGP4078DPbF IRGP4078D-EP IRGP4078DPbF/EP O-247AC O-247AD JESD47F) 100A6

    IRGP4085

    Abstract: No abstract text available
    Text: PD - 97286 IRGP4085DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


    Original     		PDF IRGP4085DPbF O-247AC IRGP4085

    Untitled

    Abstract: No abstract text available
    Text: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGP4055DPbF O-247AC

    IRGP4055DPBF

    Abstract: igbt display plasma TO-247AC Package igbt
    Text: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGP4055DPbF O-247AC IRGP4055DPBF igbt display plasma TO-247AC Package igbt

    tc 97101

    Abstract: IRGP4065D IRFPE30 igbt qualification circuit l200h
    Text: PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


    Original     		PDF IRGP4065DPbF O-247AC tc 97101 IRGP4065D IRFPE30 igbt qualification circuit l200h

    tc 97101

    Abstract: igbt display plasma IRFPE30 IRGP4065DPBF
    Text: PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability


    Original     		PDF IRGP4065DPbF O-247AC tc 97101 igbt display plasma IRFPE30 IRGP4065DPBF

    IRGP4065PBF

    Abstract: No abstract text available
    Text: PD - 97208 IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGP4065PbF O-247AC IRGP4065PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97059A IRGB4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF 7059A IRGB4065PbF O-220AB

    igbt display plasma

    Abstract: No abstract text available
    Text: PD - 97207 IRGP4055PbF PDP TRENCH IGBT Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGP4055PbF O-247AC igbt display plasma

    pdp driver

    Abstract: IRGI4055PbF
    Text: PD - 97186 IRGI4055PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGI4055PbF O-220AB pdp driver IRGI4055PbF

    igbt display plasma

    Abstract: ge 915
    Text: PD - 97058 IRGB4055PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRGB4055PbF O-220AB igbt display plasma ge 915