IGBT WITH V-I CHARACTERISTICS Search Results

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

10N100U1

Abstract: RG150
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: SGH13N60UFD FEATURES N-CHANNEL IGBT TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 1.95 V (@ lc=6.5A) * High Input Impedance ’ CO-PAK, IGBT with FRD : Trr = 37nS (typ.) i APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters

SGU1N60XFD

Contextual Info: Preliminary IGBT CO-PAK SGU1N60XFD FEATURES I-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.5 V (@ Ic=0.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 50nS (typ.) APPLICATIONS C * General Purpose Inverters * Lamp Ballast G E

3 phase UPS block diagram using IGBT

Abstract: 1ED020I12-F EiceDRIVER SOLAR INVERTER infineon igbt power solar inverter 1ED020I12F H9218 single phase inverter IGBT driver 1ED020I12FA IGBt driver 1ed020I12-F
Contextual Info: Product Brief EICEDRIVER Single Channel IGBT Driver I n f i n e o n E I C E D R I V E R™ 1 E D 0 2 0 I 1 2 - F a Applications is a single channel IGBT Driver IC providing galvanic isolation and bidirectional • Industrial drive signal transmission with high ambient temperature capability. It enables extremely

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

G20N60

Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48

Contextual Info: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30

Contextual Info: Power Module 1200V IGBT Family MG12300D-BN3MM Series 300A Dual IGBT RoHS Features • H  igh short circuit capability,self limiting short circuit current • IGBT CHIP 1200V NPT technology • V  CE(sat) with positive temperature coefficient • F  ast switching and short

Contextual Info: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ

Contextual Info: Power Module 1200V IGBT Family MG12300D-BN2MM Series 300A Dual IGBT RoHS Features • H  igh short circuit capability,self limiting short circuit current • F  ast switching and short tail current • IGBT3 CHIP Trench+Field Stop technology • V  CE(sat) with positive

50N60AU1

Contextual Info: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90

DIM400XCM33-F000

Contextual Info: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A

IRGPH40KD2

Abstract: CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
Contextual Info: P D - 9.1250 International I IR e c t i f i e r IRGPH40KD2 Provisional Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • S h o rt circu it - 1 0 |js @ 125°C , V GE = 10V V c e s = 1200V

DIM300XCM45-F000

Contextual Info: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A

IGBT 7000V

Abstract: ge traction motor DIM200KSM65-K000 CC4400 IGBT 6500v L 3005 TRANSISTOR STK411-550G datasheet
Contextual Info: DIM200KSM65-K000 Single Switch IGBT Module DS5819-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23680)

ge traction motor

Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)

ge traction motor

Abstract: DIM400XSM65-K000
Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.1 October 2005 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN24289)

DIM800ECM33-F000

Abstract: KW transistor
Contextual Info: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.2 January 2009 LN26568 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V 800A

DIM800XSM33-F000

Contextual Info: DIM800XSM33-F000 Single Switch IGBT Module PDS5906 1.2 January 2009 LN26569 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V

Contextual Info: Preliminary Data Sheet International [iör]Rectifier IRGPC40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • PD - 9.1084 V ces = 600V Short circuit rated -10ps @ 125°C, V qe = 15V

DIM800NSM33-F000

Contextual Info: DIM800NSM33-F000 Single Switch IGBT Module PDS5615-4.1 January 2009 LN26570 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V

DS5820-1

Abstract: 4400 transistor
Contextual Info: DIM2400ESM17-E100 Single Switch IGBT Module DS5820-1.0 November 2004 FEATURES High Thermal Cycling Capability Soft Punch Through Silicon ✁ Isolated MMC Base with AlN Substrates ✁ KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23687)