50N60BD3 Search Results

50N6

Abstract: xs 004 a
Contextual Info: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600

BD3 diode

Abstract: 50N60BD2 w a2a
Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75

Contextual Info: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ

Contextual Info: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 v CE sat = 600 V = 75 A = 2.5 V Buck configuration •V• - Preliminary data sheet t- BQ Symbol Test Conditions V CES Tj = 25° C to 150° C v CGR T.J V ¥ ges À Maximum Ratings 600 V 600 V Continuous

Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: m yY V C •■¡I O jl IXGN 50N60BD2 IXGN 50N60BD3 HiPerFAST IGBT with HiPerFRED V CES ^C25 V CE sat t Buck & boost configurations = 600 V = 75 A = 2.5 V = 150 ns IGBT .BD2 Symbol TestC onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR

BD3 diode

Abstract: IXSN50N60BD2 IXSN50N60BD3 50N60
Contextual Info: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

IGBT 60A

Abstract: ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn
Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: HiPerFASTTM IGBT with HiPerFRED VCES IC25 VCE sat tfi IXSN 50N60BD2 IXSN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

50N60BD3

Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30

Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

b1113

Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Contextual Info: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

2QN60

Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01