IN4149
Abstract: 1N4149 ic 1N4148 diodes IN4148 1N4148 IN4148 DO-35 716-0422
Contextual Info: IN4148, IN4149 • G EN ERA D E S C R IP T IO N O U T L IN E D R A W IN G The fam ily of 1N4148, 1N4149 are the silicon epitaxial planar diodes that provide low capacitance, high conductance, and fast reverse recovery. W ith these features, the devices are
|
OCR Scan
|
IN4148,
IN4149
1N4148,
1N4149
DO-35
188/TELEX
1N4148
1N4149
IN4149
ic 1N4148
diodes IN4148
1N4148 IN4148 DO-35
716-0422
|
PDF
|
CV9637
Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
Contextual Info: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
|
OCR Scan
|
DO-35
BS9300
IN914
DO-35
CV8790
IS922
CV9637
IN4448
cv8617
is920 equivalent
IS920
cv7332
DO35 DIODE Is44
CV7040
CV7875
IN4149
|
PDF
|
IN4148
Abstract: IN4148 specifications IN4148 diode specifications IN4148 equivalent
Contextual Info: BURR — BROLJN CORP H E I d I 7 3 i 3 b 5 o o m g g ^ T - s S - o Y " B U R R -B R O W N E g | \ REF200 3 DUAL CURRENT SOURCE o o CM U_ LU DC FEATURES APPLICATIONS • COMPLETELY FLOATING: No Common Connection • HIGH ACCURACY: lOOfiA ±0.5% • LOW TEMPERATURE COEFFICIENT:
|
OCR Scan
|
REF200
25ppm/Â
REF200
17313kl5
IN4148
IN4146
IN4149
IN4148
IN4148 specifications
IN4148 diode specifications
IN4148 equivalent
|
PDF
|
TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
|
OCR Scan
|
2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
|
PDF
|
IN4152
Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.
|
OCR Scan
|
IS960
IS961
DO-35
IN4152
IN4606
in4447
IN916B
IN4608
IN917
IN4150
in914b
IN4149
IN4164
|
PDF
|
IN4149
Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.
|
OCR Scan
|
CV8790
IS922
DO-35
CV9637
IN4448
DS59-61/03/302
BAY71
DS59-61/03/303
IN4149
CV7040
Diode BAY 61
IS923
IN917
CV8617
texas is920
IS920
|
PDF
|
IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
|
Original
|
|
PDF
|
GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
|
OCR Scan
|
|
PDF
|
IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
|
OCR Scan
|
3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
|
PDF
|
CV7040
Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7
|
OCR Scan
|
1S111
1S113
1S120
1S121
1S130
1S131
1S132
1S134
1S920
DO-35
CV7040
cv8790
OA202 equivalent
BY 225 diode
IS920
DO-35 silicon Rectifier diodes
CV8617
CV7875
CV7332
10 35 DIODE
|
PDF
|