1S131 Search Results

2SK785

Contextual Info: 64 27 52 5 N E C ELEC TR ON IC S INC 98D 18931 D T " J f - 3 w üg¡ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU RES B E | t 4 E7 S a S D D 1S131 3 2SK785 | The 2SK785 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.

diode oa202

Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

1S1311

Abstract: hydraulic B00508G REV01 locator
Contextual Info: Hydraulic Crimp Tool 1368 Crimping Instructions The 1368 Hydraulic crimp tool is recommended for use with contact sizes #4 through 4/0 AWG. For specific contact recommendations and locators refer to tooling chart for Hydraulic tooling located on the APP website

Contextual Info: NOTES: 1. PUSH OUT FORCE SHALL BE 2 lb. MIN. 2. A REPRESENTS A CRITICAL DIMENSION 3 . ALL DIMENSIONS IN BRACKETS [ ] TO BE IN MILLIMETERS. 4. NOTE 4 DELETED 5. NOTE 5 DELETED. 6. NOTE 6 DELETED. 7. FOR NON - L C te - A , USE 2T S -X X -D . 8. COPLANARITY TO INCLUDE INSULATOR.

Contextual Info: UNLESS OTHERWISE NOTED REVISION M DIMENSIONS ARE IN INCHES - NO. OF POS. x .0 7 8 7 4 + .2 4 2 6 REF [NO. OF POS. x 2.0 + (6.16) REF] ONE PLACE DECIMALS: TWO PLACE DECIMALS: -N O . OF PO S x .0 7 8 7 4 + (.1726) R E F [NO. OF POS. x 2.0 + (4 .3 8) REF]

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: UNLESS OTHERWISE NOTED REV. DIMENSIONS ARE IN INCHES ONE PLACE DECIMALS TWO PLACE DECIMALS ^ 2mm TERMINAL STRIP ASSEMBLY TOLERANCES ARE: ± .1 [2 .5 ] THREE PLACE DECIMALS ± .0 0 5 [.1 3 ] ± .0 1 [.2 5 ] FOUR PLACE DECIMALS ± .0 0 2 0 [.0 5 ] ANGLES