INDUCTOR 73 MH Search Results

Contextual Info: TYPE Surface Mount Inductors D63LCB 73 TYPE D63LCB Frequency Range: 10kHz -1 MHz Inductance Range: 1 -1 50pH Recommended patterns: Features • • • • • Low profile 3.0mm max. Ideal for a variety of DC-DC converter inductor applications Magnetically shielded

Contextual Info: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C

Contextual Info: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C

Contextual Info: SMT PLANAR POWER INDUCTOR SERIES ! W E N Height: .290" Max Footprint: .78" x .75" Current Range: 9 A to 73 A Inductance Range: .45 µH to 6.2 µH Maximum Energy Storage: 2.4 mJ Low Power Loss Ratings: .16 to 2.25 W Frequency Range: 100 kHz to 2 MHz Electrical Specifications @ 25°C — Operating Temperature -40°C to +100°C

Contextual Info: HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

HMC617

Abstract: HMC376LP3 HMC376LP3E HMC617LP3 H376 112580
Contextual Info: HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

HMC376LP3

Abstract: HMC376LP3E HMC382LP3
Contextual Info: HMC376LP3 / 376LP3E v00.1005 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

Contextual Info: HMC376LP3 / 376LP3E v00.1005 AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

3g amplifier

Abstract: mobile rf power amplifier transistor HMC376LP3 HMC376LP3E HMC382LP3
Contextual Info: HMC376LP3 / 376LP3E v00.1005 LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

Contextual Info: Anam PA.25a Specification Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Efficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G |

Contextual Info: Anam PA.25a Speciication Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Eficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G | page 1 of 21

capacitor 10kpf

Abstract: Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification SR703 BN-43-202
Contextual Info: 17 TB-113 RF TEST DATA RECORD TEST SPECIFICATION - SR703 AMP REVISED VDS - 28 V UNIT # Fq MHz 1 2 3 4 5 6 7 8 9 10 11 100 110 120 130 140 150 160 170 180 190 200 IDQ - 4.0 A Pin (WATTS) INPUT RT LOSS (DB) Pout (WATTS) OPERATOR - KM ID (AMPS) -17 -19 -21

D400 transistor

Abstract: MS21 D400 transistor pin layout microwave antenna 1500 MHz Schaffer transistor d400 AN025 BAR63 BAR63-03W BAR65
Contextual Info: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 5 1400 - 1600 MHz PIN-Diode Transmit-Receive Switch R F & P r o t e c ti o n D e v i c e s Edition 2006-10-20 Published by Infineon Technologies AG 81726 München, Germany

Contextual Info: AWB512 AWB512 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB512, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

Contextual Info: AWB519 AWB519 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB519, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

Contextual Info: IHLP-6767GZ-01 Vishay Dale Low Profile, High Current IHLP Inductor FEATURES • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Saturation and

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

IHLP-6767GZ-01

Contextual Info: IHLP-6767GZ-01 Vishay Dale Low Profile, High Current IHLP Inductor FEATURES • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Saturation and

A01 MMIC

Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
Contextual Info: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level

PA25A

Abstract: antenna CDMA GPRS gsm short whip 1820MHz gsm module 1145MHz helix antenna PA-25
Contextual Info: Specification Model No. : PA.25 Anam Part No. : PA.25a Product Name : Features Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA / UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz : High Efficiency Multi-Band SMD Antenna 35*6*5mm RoHS  Photo Version

DECT transmitter siemens

Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Contextual Info: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the

sod343

Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

IC pt 2399 CIRCUIT DIAGRAM

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB G A