INFINEON IGBT3 RG Search Results

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

igbt infineon

Abstract: Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt
Contextual Info: 600 V IGBT³-Technology in New Low Cost Modules for Consumer Drives Applications P. Kanschat1, T. Stolze1, T. Passe1, H. Rüthing2, F. Umbach2, O. Hellmund3 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany Infineon Technologies AG, St. Martin-Str. 76, D-81541 München, Germany

6.5kV IGBT

Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Contextual Info: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany

3rd Generation of 1200V IGBT Modules

Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Contextual Info: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings

IGBT DRIVER SCHEMATIC chip

Abstract: The field stop IGBT FS IGBT infineon igbt3 1200v IGBT3 infineon IGBT DRIVER SCHEMATIC AN2003-03 igbt3 rg EICEDRIVER 4kA IGBT IGBT CHIP 1700V
Contextual Info: APPLICATION NOTE Seite 1 von 6 Datum:2003-04-08 AN-Nummer: AN2003-03 Switching behavior and optimal driving of IGBT3 modules 1. Chip Technology The IGBT chip of the third generation IGBT3 has a trench structure and combines the advantages of PT and NPT technologies thanks to an additional n-doped layer, known as the Field Stop (FS) layer, within the NPT

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

IGD515EI

Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Contextual Info: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q3 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C Application Q1 CR1 Trench & Field Stop IGBT3 Q1, Q3:

Contextual Info: SIGC186T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC186T170R3E VCE IC 1700V 150A This chip is used for: • power modules

tsc 1003

Contextual Info: SIGC101T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power modules C Applications: • drives

Contextual Info: IGC82T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • power modules C Applications: • drives G Chip Type

Contextual Info: SIGC12T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G Chip Type

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: IGC114T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses and saturation losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC114T170S8RH VCE IC 1700V 100A This chip is used for:

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: SIGC32T120R3E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G

Contextual Info: SIGC109T120R3E IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for:  power modules

Contextual Info: SIGC101T170R3E IGBT3 Power Chip Features: • 1700V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives

Contextual Info: SIGC41T120R3E IGBT3 Power Chip FEATURES: • 600V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling Chip Type SIGC41T120R3E VCE 1200V IC 35A This chip is used for:  power module

IKW40N60H3

Abstract: IKW40N60 L7448
Contextual Info: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target