Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFRARED LIGHT EMITTING DIODE Search Results

    INFRARED LIGHT EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL29044AIROMZ-T7 Renesas Electronics Corporation Low Power Ambient Light and Proximity Sensor with Internal IR-LED and Digital Output, HODFN, /Reel Visit Renesas Electronics Corporation
    ISL29043IROMZ-T7 Renesas Electronics Corporation Low Power Ambient Light and Proximity Sensor with Internal IR-LED and Digital Output, HODFN, /Reel Visit Renesas Electronics Corporation
    ISL29044IROMZ-T7 Renesas Electronics Corporation Low Power Ambient Light and Proximity Sensor with Internal IR-LED and Digital Output, HODFN, /Reel Visit Renesas Electronics Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    INFRARED LIGHT EMITTING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


    Original     		PDF LN189S LN189S

    LN189S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


    Original     		PDF LN189S LN189S

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		PDF LN189M 100mA

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		PDF LN189L LN189L

    LN189L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical


    Original     		PDF LN189L LN189L

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF

    LN162S

    Abstract: GaAs 1000 nm Infrared Emitting Diode
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :


    Original     		PDF LN162S LN162S GaAs 1000 nm Infrared Emitting Diode

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:


    Original     		PDF LN162S CTRLR102-001

    LN162S

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :


    Original     		PDF LN162S LN162S

    LN52

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF

    GaAs 850 nm Infrared Emitting Diode

    Abstract: Infrared Emitting Diode LN52
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF 100mA GaAs 850 nm Infrared Emitting Diode Infrared Emitting Diode LN52

    AP 1100 R1

    Abstract: LN58
    Text: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :


    OCR Scan     		PDF

    infrared detectors

    Abstract: Infrared Emitting Diode LNA2601L
    Text: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


    OCR Scan     		PDF LNA2601L infrared detectors Infrared Emitting Diode LNA2601L

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F

    LN66F

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F LN66F

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2601L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


    OCR Scan     		PDF LNA2601L 25f-power 010Jg.

    a950

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F 0102Q. a950

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA

    LN162S

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P 0 = 3.5 mW typ. • Infrared light emission close to m onochromatic light : A,P = 950 nm (typ.)


    OCR Scan     		PDF LN162S LN162S

    IR Blue Light infrared

    Abstract: LN66
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA IR Blue Light infrared LN66

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)


    OCR Scan     		PDF LN172 100mA

    LNA2801L

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LNA2801L LNA2801L

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LNA2801L