LN66 Search Results
LN66 Price and Stock
Panasonic Electronic Components LN66FEMITTER IR 950NM 50MA |
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LN66F | Bag |
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Panasonic Electronic Components LN660000REMITTER IR 950NM 100MA T 1 3/4 |
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LN660000R |
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STL STL-N-6604-PORT PCIE 2.5GB REALTEK ETHERN |
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STL-N-660 | Box |
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Ruland Manufacturing Co Inc IPLN-6-6-1-2X13-FINDEXING PLUNGER WITH LOCK-OUT |
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IPLN-6-6-1-2X13-F | Bag | 1 |
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Ruland Manufacturing Co Inc IPLN-6-6-M12X1.5-FINDEXING PLUNGER WITH LOCK-OUT |
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IPLN-6-6-M12X1.5-F | Bag | 1 |
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LN66 Datasheets (37)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GaAs Infrared Light Emitting Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GaAs Infrared Light Emitting Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66 | Unknown | The Optical Devices Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Light Emitting Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Light Emitting Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Light Emitting Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Light Emitting Diodes LED | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN660000R |
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Infrared, UV, Visible Emitters, Optoelectronics, INFRARED LIGHT EMITTING DIODE | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A |
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GaAs infrared light emitting diode For optical control systems | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A |
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GaAs Infrared Light Emitting Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A | Unknown | The Optical Devices Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A |
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Light Emitting Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A |
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Light Emitting Diodes LED | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66A |
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Light Emitting Diodes LED | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| LN66AL |
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GaAs infrared light emitting diode For optical control systems | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66F |
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GaAs Infrared Light Emitting Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66F |
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GaAs Infrared Light Emitting Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66F | Unknown | The Optical Devices Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66F |
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Light Emitting Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LN66F |
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Light Emitting Diodes LED | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
LN66 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors |
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2002/95/EC) LN66F | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors |
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LN66F | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light em itting spectrum suited for silicon photodetectors • Good radiant pow er output linearity with respect to input current |
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LN66A | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 NC G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors |
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100mA | |
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Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors |
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LN66F | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors |
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2002/95/EC) LNA2902L LN66A | |
LN66LContextual Info: Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW typ. Good radiant power output linearity with respect to input current |
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LN66L LN66L | |
LN66F
Abstract: 1000 nm light emitting diode
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LN66F 100Hz LN66F 1000 nm light emitting diode | |
8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
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MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741 | |
LN66FContextual Info: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors |
OCR Scan |
LN66F LN66F | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current |
OCR Scan |
0102Q. | |
a950Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors |
OCR Scan |
LN66F 0102Q. a950 | |
LN66Contextual Info: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : PO = 8 mW typ. 1.0 For optical control systems Good radiant power output linearity with respect to input current |
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LN66FContextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3 |
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LN66F LN66F | |
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LN66A
Abstract: LNA2903L
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2002/95/EC) LNA2903L LN66A) LN66A LNA2903L | |
ir 21015
Abstract: Infrared Emitting Diode LN66
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current |
OCR Scan |
100mA | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu |
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2002/95/EC) LNA2902L LN66A | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea |
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2002/95/EC) LNA2903L LN66A) | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 L G aAs Infrared Light Em itting Diode Unit : mm 05.O±O.2 For optical control systems • Features • • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors |
OCR Scan |
100mA | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current |
OCR Scan |
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Contextual Info: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 M Di ain sc te on na tin nc ue e/ d Features 1.0 High-power output, high-efficiency : PO = 8 mW typ. Absolute Maximum Ratings (Ta = 25˚C) |
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Infrared Emitting Diode
Abstract: LN66
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100mA Infrared Emitting Diode LN66 | |
VF 100 PANASONIC
Abstract: LN66A
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LN66A VF 100 PANASONIC LN66A | |