INTERNATIONAL CMOS TECHNOLOGY Search Results

Contextual Info: International International CMOS CMOS Technology Technology TM 22LV10AZ-25 TM Commercial PEEL PEEL 22LV8Z-25 PEEL 22LV10AZ-25 CMOS Programmable Electrically Erasable Logic Device Features • Low Voltage, Ultra Low Power Operation - Vcc = 2.7 to 3.6 V

Contextual Info: INTERNATIONAL C M O S 5SE D 4flMQ707 DOOQMl 2 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. 7 PEElIM 20CG10-12/PEE! 20CG1 0-15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility

Contextual Info: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —

Contextual Info: 37E D INTERNATIONAL C M O S 4Ô40707 GOQGBTl T MICT Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T—46—19-07 PEEL 273-15 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE SUPERSET REPLACEMENT FOR PLS173

Contextual Info: 37E D INTERNATIONAL C M O S 4040707 000030b b INTERNATIONAL CMOS TECHNOLOGY, INC. Product Preview T-46-19-07 , TM PEEL 173-15 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE — 12 inputs and 10 l/Os

Contextual Info: INTERNATIONAL C M O S MÔ4D7Q7 00DQ3SÖ 1 37E D Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 20CG10-12/PEEL 20CG10=15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility — 92 product temi X 44 input AND array

Contextual Info: INTERNATIONAL C M O S E5E D 4640707 GGGQITE H INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL22CV10 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs

Contextual Info: HÔM07Ü7 0Q003SD 7 M I C I 37E D INTERNATIONAL C M O S Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T -4 6 -1 9 - o T PEEC18CV8-1 0/PEECm 18CV8-12 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • 1-Micron CMOS EEPROM Technology

Contextual Info: INTERNATIONAL SSE D C M O S 4040707 ODOöni 7 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. PEEC"22CV1 0-12/PEEll"22CV10-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — • 132 product term x 44 input AND array

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. INTERNATIONAL C M O S 37E D H March 1991 4640707 0D0043T 1 IS ICT PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Featu res ^ ^ ^ ~<^~7 Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: INTERNATIONAL C M O S 5SE D 4Ö407G7 GDD05D0 T Preliminary INTERNATIONAL CMOS TECHNOLOGY, INC. " P M H 3 - 4 7 PEEL*22CV1OZ "Zero Power” CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

8049 microcontroller APPLICATION

Contextual Info: INTERNATIONAL C M O S K 37E D • MÔ4070? D000307 b INTERNATIONAL CMOS Preliminary Data TECHNOLOGY, INC. _ _ ■ " r - q f c - i 's . 'i r ? l 93C56A/C66A 2,048/4,096-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM)

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. 3 7E D May 1991 27CX256 a 4 8 4 0 7 0 7 0 0 0 0 4 3 4 256K 32K x 8 CMOS High-Speed EPROM INTERNATIONAL C M O S 5 Features • Advanced CMOS EPROM Technology High — — — Reprogrammability — Adds convenience, reduces costs

93C46

Abstract: IC 93c46 93c46 6
Contextual Info: 4ÖM070? OOOüa^b S M I C 37E D INTERNATIONAL C M O S 71 INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Read/Write Non-volatile Memory — Single 5V supply operation

PA7024

Contextual Info: INTERNATIONAL C M O S 25E D 4040707 Qoooasa T Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. ''M f e - a -4 "? TM PA7Ö24 PEEL Array CMOS Programmable Electrically Erasable Logic Array Features Flexible Architecture — Input registers and latches — I/O buried D, T and JK registers with

PEEL22CV10P

Abstract: ict PEEL22cv10p
Contextual Info: INTERNATIONAL C M O S 9: 3 7E 4 0 * 4 0 70 7 D 0Q003bb Product Previev; INTERNATIONAL CMOS TECHNOLOGY, INC. T ^ 6 - Í 9 0 / PEELLm 22CV1 0-12/PEE1T22CV10=15 CMOS Programmable Electrically Erasabi Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153

Contextual Info: INTERNATIONAL C M O S 37E D 4040707 0 0 0 0 3 3 e ö T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8 CMOS Programmable Electrically Erasable Logic Device Features A rchitectural F lexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins

Contextual Info: •4040707 0 0 0 0 3 5 e 3 37E » INTERNATIONAL C M O S T -4 6 -1 3 -0 7 INTERNATIONAL CMOS TECHNOLOGY, INC. PEELIm22CV10 CMOS Programmable Electrically Erasable Logic Dtvice Features Architectural Flexibility — 132 product term x 44 Input AND array — Up to 22 inputs and 10 outputs

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

International CMOS Technology

Abstract: ICT Peel 82S153 pls153 PEEL18CP210 PHIL18CP210 SIGNETICS* 82S153
Contextual Info: INTERNATIONAL CMOS TEC H N O LO G Y INC. Ti Product Preview December 1986 TM (PII1L18CP210 CMOS Programmable Electrically Erasable Logic Device Features ADVANCED CMOS E2PROM TECHNOLOGY — CMOS: 25mA + .7mA/MHz Max — TTL: 35mA + .7mA/MHz Max HIGH PERFORMANCE

es relay

Abstract: Avalanche cmos 600V N MOSFET T0-220
Contextual Info: International M Rectifier Power Integrated Circuits Power Switch IPS & SmartFET SIV-DCMOS For protected power MOSFET switches, International Rectifier employs a self isolated vertical DMOS/CMOS technology. This technology enables IR to provide low voltage (up to 60V) high

93c46

Abstract: tms1000 8051 interfacing with 93c46 93c46 6 93C46 dip instruction set and programming of 8096 memory 93C46 eeprom 93c46 93c46e 8051 interfacing to EEProm
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features ideal For Low-Density Data Storage Advanced CMOS EEPROM Technology — — — • Read/Write Non-volatile Memory