INTERNATIONAL RECTIFIER IGBT TO-247 PACKAGE Search Results

Contextual Info: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

Contextual Info: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

Contextual Info: International I«R Rectifier PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

IRGPS66160DPBF

Contextual Info: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding

Contextual Info: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS

n06hd

Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Contextual Info: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and

Contextual Info: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

1084 GE

Abstract: IRG4PSC71
Contextual Info: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTO R WITH ULTRAFAST SO FT RECOVERY DIODE Features Vces = 6 0 0 V • H ole-less clip /p re ssu re m ou nt pa ckag e com p atib le

Contextual Info: International IO R Rectifier PD - 91687 IRG4PSH71K P R E L IM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H ole-less clip/pre ssure m ou nt pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforced pins

Contextual Info: PD - 9 .1 4 5 0 A International I R Rectifier IRG4BC30F P R ELIM IN A R Y Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

schematic e.m.p

Abstract: 100C EMP15P12D diode EB 24 1200V15A
Contextual Info: Bulletin I27181 rev 1.4 06/03 EMP15P12D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 15A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.7Vtyp @ 15A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

ECONOPACK

Abstract: 100C EMP15P12D schematic e.m.p rev 1.5 driver motherboard
Contextual Info: Bulletin I27181 rev 1.5 08/05 EMP15P12D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 15A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.7Vtyp @ 15A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

high frequency inverter for induction heating

Abstract: solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding
Contextual Info: IXYSPOWER Efficiency Through Technology N E W P R O D U C T B R I E F 1200V GenX3 IGBTs next generation 1200V igbts for power conversion applications march 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor IGBT portfolio to 1200

Contextual Info: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve

Inverter Welder

Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM

UM 42A

Contextual Info: International IO R Rectifier PD - 91687 IRG4PSH71K P R E LIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H ole-less clip /pressu re m ou nt pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforced pins

Contextual Info: International I«R Rectifier PD -91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H o le-less clip/pre ssure m ount pa ckag e com p atib le w ith T O -2 4 7 and T O -264, w ith reinforce d pins

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package

Contextual Info: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Rectifier, 70A, 1000V

Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Contextual Info: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

AN-994

Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.