IOR IRK Search Results

IR135DM12C

Contextual Info: Part Number 3& •NTKiNATIO««!. H.C '¡Ml> International IOR Rectifier Diodes www.irf.com Side Dimension >T{AV inches) W VRM 00 Anode metallization Cathode metallization Quantity per Carrier Equivalent Finished Products Die IR135DM08C IR135DM12C IR180DM08C

Contextual Info: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

diode 6300

Contextual Info: International IOR Rectifier Phase Control SCR .'•NN V>h5.a »V I vm/ Part Number 'ism High-Voltage °q (a (A) Vdrm Diode Rating* 't(AV) @ Tc (V) (V) (A) (b) (A) *Q)C(DC) (K/W) Notes Fax on Case Demand Outline | Number Key Thyristor / High Voltage Diode

RKU91-04

Abstract: b25ds120 ior irkt91-12 B25CS120 ior e78996 IRKT IRKT THYRISTOR THYRISTOR MODULE e78996 B25CS60 E78996 ior
Contextual Info: International IOR ]Rectifier Power Modules Thyristor/Thyristor 6 P171 P172 P173 P174 P175 P471 P472 P473 P474 P475 Part Number Vr r m (7) (8) VDRM (V) — — — — — — — — - - >T(AV) @ Tc (A) (°C) RthJC DC Case Outline Number (°C/W) (9) •t s m 0 )

IRKCL91-06S02

Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Contextual Info: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02

0D3G2

Contextual Info: Bulletin 127141 rev. C 09/97 International IOR Rectifier IRK.91 SERIES STANDARD DIODES NEWADD-A-pak Power Modules F e a tu re s • E lectrica lly isolated : D B C b a s e p late ■ 3 5 0 0 V RMS Isolating v o lta g e ■ S ta n d a rd J E D E C p ac kag e

RKC7

Contextual Info: International IOR Rectifier NTL iN A ' O • ; . PtC. tilt». Diodes A N N :V iW iA ir IV*-* Vfb @ * x Part Number VHM V i Fa v @ T c (A) (C) 'F(*V) (A) (V) Fax on Demand Number 1FSM 50 Hi 60Hz Rejc(oq (A) rc/W ) Notes Case Outline Key Power Module Center tap common cathode

Contextual Info: Bulletin 127402 rev. A 09/97 International lO R Rectifier IRKD600. SERIES STANDARD DIODES SUPER MAGN-A-pak Power Modules Features 600 A • High current cap ab ility ■ 3 0 0 0 V RMg isolating v o lta g e with n o n-toxic substrate ■ High surge cap ab ility

1505cma

Abstract: IRK 330
Contextual Info: Bulletin 127090 International IÖ R Rectifier IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ E lectrically isolated base plate ■ 3500 V RMSis o la tin g vo lta g e rev. A 09/97 ■ Industrial standard package

Contextual Info: kitemational l HRectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all 'tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

ior e78996

Contextual Info: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate

switching TRANSISTOR mosfet 30V 40A

Abstract: IRGB440U
Contextual Info: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

tg1g

Abstract: high power thyristor scr 3f scr thyristor irkv 300
Contextual Info: Bulletin 127102 rev. A 10/97 International IQ R Rectifier SCR / SCR and SCR / DIODE Features • High voltage ■ E lectrically isolated base plate ■ 3000 VRMS isolating voltage ■ Industrial standard package ■ S im plified m echanical designs, rapid assem bly

Contextual Info: Bulletin 127096 rev. A 09/97 International IÖ R Rectifier IRK. SERIES INT-A-pak Power Modules STANDARD RECOVERY DIODES Features • High voltage ■ E lectrically isolated base plate ■ 3500 V RMSiso la tin g voltage ■ Industrial standard package ■

Contextual Info: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD - 9 .1 4 5 2D International I R Rectifier IRG4BC30U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optim ized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

M6SS

Contextual Info: Bulletin 127094 rev. A 09/97 International IQR Rectifier IRK.L240 S E R IE S FAST RECOVERY DIODES MAGN-A-pak Power Modules Features • Fa st re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly is o la te d b a se p la te ■ In d u s tria l s ta n d a rd p a c k a g e

83977ef

Abstract: 8042 intel kbc max2050
Contextual Info: W83977EF/CTF WINBOND I/O W83977EF/CTF Data Sheet Revision History Version Pages Dates Version on Web Main Contents First published. 1 N.A. 06/01/98 0.40 2 4, 7, 49, 50, 53, 55, 90, 91 06/16/98 0.41 3 14, 15, 16 08/17/98 0.42 Parallel port pin description correction

bulletin 127900

Abstract: 104MT I27900 SK645FR SX ETFE IRKT 64440211AA 180420-2 IRKT AN
Contextual Info: International IÖ R Rectifier Optional Hardware MT.KB Series 1 2- GATE LEADS Ident No. Device Series Description 644&2112AA 51r 91r 111MT.KB 2 DX connectors with yellow and white leads 64432113lA A 5 2 ,9 2 .112MT.KB 1 S X + 1 DX connectors with yellow and white loads

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: V L S I T e c h n o l o g y , in c . VL16C554 QUAD ASYNCHRONOUS COMMUNICATIONS ELEMENT FEATURES - 5-, 6-, 7- or 8-bit characters - Even-, odd- or no-parity generation and detection - 1 , 1 1 /2, or 2 stop bit generation • Four 16550 C om patible Serial Ports

1RGPC50U

Abstract: IRGPC50U
Contextual Info: International S Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

UMC Floppy Disk Data Separator

Abstract: um8398
Contextual Info: UMC UM8398 WÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊttÊÊÊÊÊÊÊË Single-Chip Floppy Disk M f WÊÊËÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊÊ Controller Wtü Features IBM PC X T /A T drive system com patible Internal w rite precompensation circu it; precompensation