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    Untitled

    Abstract: No abstract text available
    Text: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application


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    PDF 1608C O-220 4AS5455

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed


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    PDF IRL3402

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q


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    PDF 1276B IRFZ34N O-220 002473b

    irl3705n

    Abstract: T3A marking hp ds 870 CJ 53B
    Text: International I R Rectifier ro-9.1370* IRL3705N preliminary HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


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    PDF IRL3705N O-220 Q2553E T3A marking hp ds 870 CJ 53B