IPD10 Search Results

100484

Abstract: 100A484 100474 D-20 100476LL
Contextual Info: N E C ELECTRONICS INC blE D • ÆJJ W NEC Electronics Inc. L4E752S GG3534fl IGT « N E C E #iPD10500 262,144 X 1-Bit 10K BiCMOS ECL RAM T ' t t » -o 2 3 - ¿>5 - Description Pin Configuration The iPD10500 is a very high-speed BiCMOS RAM with a 10K ECL interface. Its unique design uses blended

4N060

Abstract: 4N06 4n0603 IPD100N06S4-03 D100A PG-TO252-3-11 J350-6 ipd100n
Contextual Info: IPD100N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 100 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

105N03L

Contextual Info: Type OptiMOS 3 Power-Transistor IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters V 10.5 ID mΩ 35 A 1) • Qualified according to JEDEC for target applications

10N03LA

Abstract: 10n03l FET K 1358 IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA PG-TO252-3-11
Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

Contextual Info: Type OptiMOS 3 Power-Transistor IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters V 10.5 ID mΩ 35 A 1) • Qualified according to JEDEC for target applications

105N03L

Contextual Info: Type OptiMOS 3 Power-Transistor IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters V 10.5 ID mΩ 35 A 1) • Qualified according to JEDEC for target applications

10N03LA

Abstract: 10N03 10N03L FET K 1358 K 1358 fet transistor IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11
Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

10N03L

Abstract: 10N03LA FET K 1358 10N03 K 1358 fet transistor M1698 IPD10N03LA PG-TO252-3-11 IPF10N03LA IPS10N03LA
Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

10N03LA

Abstract: 10N03L FET K 1358 K 1358 fet transistor IPU10N03LA P-TO251-3-1 P-TO252-3-11 IPS10N03LA IPD10N03LA IPF10N03LA
Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

IPD100N04S4-02

Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
Contextual Info: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

105n03l

Abstract: TO252-3 IPD105N03L IPS105N03L PG-TO252-3-11
Contextual Info: Type OptiMOS 3 Power-Transistor IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters V 10.5 ID mΩ 35 A 1) • Qualified according to JEDEC for target applications

105N03L

Abstract: IPS105N03L PG-TO251 IPD105N03L IEC61249-2-21 PG-TO252-3-11
Contextual Info: Type OptiMOS 3 Power-Transistor IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters V 10.5 ID mΩ 35 A • Qualified according to JEDEC1) for target applications

105N04L

Abstract: IPD105N04L JESD22 C6150 IPD105N04L G
Contextual Info: Type IPD105N04L G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 40 R DS on ,max • Optimized technology for DC/DC converters 10.5 ID 40 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

10n03la

Abstract: 10n03l Q67042-S4286 10n03
Contextual Info: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

IPD1-06-D

Abstract: IPD1-06-D-P 51C11 IPD10
Contextual Info: REVISION G IPD1-XX-D-X FIG. 1 C1 IPD1-06-D SHOWN No OF POSITIONS -02 THRU -25 PER ROW [SEE FIG. 2 FOR -02 POSITION] .007 .003 (No OF POSITIONS x .100) + .055) .078±.010 .050 .035±.010 C2 G DO NOT SCALE FROM THIS PRINT *NOT RELEASED FOR PRODUCTION +.005

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

Contextual Info: REVISION AL DO NOT SCALE FROM THIS PRINT NOTES: MMSDX-XX-XXX-X-XX.XX-X-X-XXX 1. C REPRESENTS A CRITICAL DIMENSION. FEP CABLE OPTION 2. BURR ALLOWANCE: .003[.08] MAX. -T: FEP INSULATION OPTION 3. PARTS TO BE MOLDED TO POSITION. LEAVE BLANK FOR STANDARD 4. MINIMUM PIN PULLOUT FORCE: 4.000LB[17.79N]

Contextual Info: REVISION AD DO NOT SCALE FROM THIS PRINT NOTES: MMSDX-XX-XXX-X-XX.XX-X-X-XXX 1. REPRESENTS A CRITICAL DIMENSION. FEP CABLE OPTION 2. BURR ALLOWANCE: .003[.08] MAX. -T: FEP INSULATION OPTION 3. PARTS TO BE MOLDED TO POSITION. LEAVE BLANK FOR STANDARD 4. MINIMUM PIN PULLOUT FORCE: 4.000LB[17.79N]

Contextual Info: REVISION G IPD1-XX-S-X-X C1 DO NOT SCALE FROM THIS PRINT .007 .003 No OF POSITIONS x .100 + .055) OPTION G *-R: RETENTION LATCH (SEE NOTE 16) (SEE SHEET 3) No OF POSITIONS -02 THRU -10 (PER ROW) [SEE FIG. 2 FOR -02 POSITION] .078±.010 .050 .035±.010

Contextual Info: REVISION L IPD1-XX-S-X-X C1 .007 .003 No OF POSITIONS x .100 + .055) DO NOT SCALE FROM THIS PRINT .078±.010 .050 No OF POS T/B BOW S/S BOW -02 THRU -10 -11 THRU -25 .002 .003 .002 .003 +.006 .505 - .000 .08 C2 TABLE 1 .035±.010 +.005 .220 - .003 SEE NOTE 11

Contextual Info: REVISION X IPD1-XX-D-XX-X FIG 1 C IPD1-06-D SHOWN C +.007 No OF POSITIONS x .100 + .058) - .003 .078±.010 .050 ROW SPECIFICATION -D: DOUBLE .035±.010 DO NOT SCALE FROM THIS PRINT POLARIZATION OPTION -P: POLARIZED (NOT AVAILABLE WITH -K OR-G OPTIONS) (LEAVE BLANK FOR

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather