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Rochester Electronics LLC IPI70N12S311AKSA1 MOSFET N-CH 120V 70A TO262-3
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DigiKey	IPI70N12S311AKSA1	Bulk	24,000		263	1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now
Rochester Electronics LLC IPI70N12S3L12AKSA1 PFET, 70A I(D), 120V, 0.0158OHM,
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DigiKey	IPI70N12S3L12AKSA1	Bulk	19,000		263	1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now
Rochester Electronics LLC IPI70N10SL16AKSA1 MOSFET N-CH 100V 70A TO262-3
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DigiKey	IPI70N10SL16AKSA1	Bulk	9,000		192	1 - 10 - 100 - 1000 $1.57 10000 $1.57	Buy Now
Rochester Electronics LLC IPI70N04S406AKSA1 MOSFET N-CH 40V 70A TO262-3
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DigiKey	IPI70N04S406AKSA1	Bulk	4,250		340	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Rochester Electronics LLC IPI70N10S3L12AKSA1 MOSFET N-CH 100V 70A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI70N10S3L12AKSA1	Tube	2,000		371	1 - 10 - 100 - 1000 $0.81 10000 $0.81	Buy Now

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IPI70 Datasheets (14)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IPI70N04S3-07		Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 6.2 mOhm; I_D (max): 70.0 A; R_thJC (max): 1.9 K/W;		Original	PDF
IPI70N04S307AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO262-3		Original	PDF
IPI70N04S4-06		Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 70A TO262-3-1		Original	PDF
IPI70N04S406AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 70A TO262-3-1		Original	PDF
IPI70N10S3-12		Infineon Technologies	Single: N-Channel 100V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T; V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 11.6 mOhm; I_D (max): 70.0 A; R_thJC (max): 1.2 K/W;		Original	PDF
IPI70N10S312AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 70A TO262-3		Original	PDF
IPI70N10S3L-12		Infineon Technologies	Single: N-Channel 100V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T; V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 12.1 mOhm; I_D (max): 70.0 A; R_thJC (max): 1.2 K/W;		Original	PDF
IPI70N10S3L12AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 70A TO262-3		Original	PDF
IPI70N10SL-16		Infineon Technologies	Single: N-Channel 100V MOSFETs; Package: PG-TO262-3; Technology: SIPMOS ; V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 16.0 mOhm; I_D (max): 70.0 A; R_thJC (max): 0.6 K/W;		Original	PDF
IPI70N10SL16AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 70A TO262-3		Original	PDF
IPI70N12S311AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL_100+		Original	PDF
IPI70N12S3L12AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL_100+		Original	PDF
IPI70P04P409AKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO262-3		Original	PDF
IPI70R950CEXKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - CONSUMER		Original	PDF

IPI70 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SMD-2520 Abstract: 3N10L smd diode 104 Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified	Original	IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104	PDF
3n0407 Abstract: 3N04 DIODE smd marking v1 ANPS071E IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 PG-TO263-3-2 Application Note ANPS071E 3N040 Contextual Info: IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1	Original	IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0407 IPI70N04S3-07 3n0407 3N04 DIODE smd marking v1 ANPS071E IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 PG-TO263-3-2 Application Note ANPS071E 3N040	PDF
PG-TO262-3-1 Contextual Info: Preliminary Data Sheet IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 6.8 mΩ ID 70 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1	Original	IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70N04S3-07 IPI70N04S3-07	PDF
3N10L12 Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L Contextual Info: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified	Original	IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L12 IPI70N10S3L-12 3N10L12 IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L	PDF
4P0409 Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3 Contextual Info: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow	Original	IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3	PDF
4N0406 Abstract: IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2 Contextual Info: IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0406 IPI70N04S4-06 4N0406 IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2	PDF
N10L16 Abstract: N10L-16 n10l IPI70N10SL-16 IPB70N10SL-16 IPP70N10SL-16 PG-TO263-3-2 SP0002-25708 SP0002-25700 IPI70 Contextual Info: IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor • N-Channel Product Summary VDS 100 V • Enhancement mode RDS on 16 mΩ • Logic Level ID 70 A Feature • 175°C operating temperature P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 • Avalanche rated	Original	IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 IPP70N10SL-16 PG-TO220-3-1 SP0002-25708 N10L16 N10L-16 n10l IPI70N10SL-16 IPB70N10SL-16 IPP70N10SL-16 PG-TO263-3-2 SP0002-25708 SP0002-25700 IPI70	PDF
3n1012 Abstract: IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2 Contextual Info: IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 11.3 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 70 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified	Original	IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N1012 IPI70N10S3-12 3n1012 IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2	PDF
3N10L Abstract: 3N10L12 PG-TO263-3-2 3N10L1 Contextual Info: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow	Original	IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70N10S3L-12 IPI70N10S3L-12 PG-TO263-3-2 3N10L 3N10L12 3N10L1	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
TLF35584 Abstract: TLE9180 alternator regulator protocol BSS BTN8980 TC27x TLE9834 TC27x data spec alternator BSD TLE9832 Infineon TLE9180 Contextual Info: Ultimate Power – Perfect Control Vehicle Safety, Body and Powertrain Applications www.infineon.com/automotivepower For a comprehensive and reliable portfolio of products for automotive and other applications, look no further than the product range from Infineon. We have used our 40 years of experience	Original		PDF
Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow	Original	IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08	PDF
4P04L08 Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08 Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow	Original	IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08	PDF
TCA965 equivalent Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated	OCR Scan	DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401	PDF

GMLAN Abstract: TLE 4209A tle 8209 TLE8718SA BTS6143D smd code 724g 742T BTS50080-1TMA TLE7240SL tle 7718 Contextual Info: Ultimate Power–Perfect Control Vehicle Safety, Body and Power Applications [ www.infineon.com/automotivepower ] For a comprehensive and reliable portfolio of products for automotive and other applications, look no further than the product range from Infineon. We have used our	Original	12F-1, B124-H9343-G1-X-7600 GMLAN TLE 4209A tle 8209 TLE8718SA BTS6143D smd code 724g 742T BTS50080-1TMA TLE7240SL tle 7718	PDF
TLE4957C Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970 Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!	Original		PDF