IQC6 Search Results

MAS 10 RCD

Abstract: PJ 3139
Contextual Info: Â I W M H S I 1 D M F K IM lÄ ,irD @ M In te l8 225636 256K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range _ P a ra m e te rs 2 2 5 6 3 6 -0 8 2 2 5 6 3 6 -1 0 Units A c c e s s T im e fro m RAS tRAc

Contextual Info: IBM11S4325BP IBM11S4325BM 4M x 32 SO D IM M M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAc RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns 30ns 35ns U a Access Time From Address ìrc Cycle Time tHPC EDO Mode Cycle Time

Contextual Info: KM41C258 J CMOS DRAM 2 5 6 K x 1 Bit C M O S Dynamic R A M with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 b i t x 1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high pe rform ance ap p lica tio n s

Contextual Info: IBM11S4360DN IBM11S4360DL 4M x 36 SODIMM M odule Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: tRAC RAS Access Time ICAC CAS Access Time -60 -70 60ns 70ns 15ns 20ns Iaa Access Time From Address 30ns 35ns I rc Cycle Time 110ns 130ns

MSM5117805A

Contextual Info: O K I Semiconductor_ M S M 5 1 1 7 8 0 5 A _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power

sti 1320

Abstract: iqc6
Contextual Info: STI36161OOA 72-PIN SIMMS 16M X 36 Bits DRAM SIMM with Fast Page Mode FPM FEATURES GENERAL DESCRIPTION Performance range: tRC tRAC tCAC STI.-60X 60ns 15ns 110ns 40ns STI.-70X 70ns 20 ns 130ns 45ns The STI3616100A is a 16M x 36 bit Dynamic RAM (DRAM) high density memory m odule. The Sim ple Technology

MAS 10 RCD

Abstract: cas number ci
Contextual Info: infer 251236 512K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range Parameters Acces Time from RAS Iraq Access Time from CAS (tcAc) Read Cycle Time (tRc) 251236-08 80 20 150 512K x 36-Bit Organization Industry Standard Pin-Out in a 72-Pin

ICE ICC3

Abstract: KMM581000A-8 KMM581000A-10 KMM581000A10 km41c1000aj 30-pin simm memory KMM481000A-8
Contextual Info: SAMSUNG S EM ICONDUCTOR INC E3E D • 7^4142 000Ô523 S ■ T KMM481000A/KMM581000A - ï b - Z Z - l ' ? MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are

Contextual Info: CELESTICA 2M x 32 EDO SOOIMM FEATURES • • • 72-pin industry standard four-byte small outline dual-in-line memory module JEDEC compliant: 21 -C, Fig. 4-15 Release 6 No. 95 M0-160 High performance, CMOS Single 3.0 ± 0.3V power supply LVTTL-compatible inputs and outputs