IR 106 Search Results

HSDL-4400

Abstract: diode blue stripe EN60825-1 HSDL-4420 HSDL-44XX HSDL-5400 HSDL-5420 HSDL4420 HSDL5420 BLUE CATHODE DIODE THROUGH HOLE
Contextual Info: Agilent High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Data Sheet HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Flat Top Package The HSDL-4400 Series of flat top IR emitters uses an untinted, nondiffused, truncated lens to

Emitter

Abstract: HSDL-4420 HSDL-5420 EN60825-1 HSDL-4400 HSDL-44XX HSDL-5400
Contextual Info: HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Data Sheet Description Features Flat Top Package The HSDL-4400 Series of flat top IR emitters uses an untinted, nondiffused, truncated lens to provide a

IrDA DATA SHEET SMT

Abstract: HSDL-4400 PIN photodiode 420 nm HSDL-4420 ir detector HSDL-5420 GALLIUM ARSENIDE ir detector HSDL 5420 031 HSDL-54XX power supply based ncp1217
Contextual Info: HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Data Sheet Description Features Flat Top Package The HSDL-4400 Series of flat top IR emitters uses an untinted, nondiffused, truncated lens to provide a

Contextual Info: MBR 1060 SCHOTTKY DIE SPECIFICATION General Description: TYPE: MBR1060 RSingle □Dual Anode 60 V 10 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: LfcD Lamps D IO D E Ô21 Ü G H T C M n T iN G «SLS SILICON SENSORS, INC. 1 S IR D S IR D S IR D S IR D S IR D 3 4 5 6 Vu, V 6 6 6 6 6 6 t o o 100 100 100 100 100 60 40 40 100 100 7 3 IR D a S IR D 9 10 =I S D S IR D i l 6 I i (mWl ; ! ! i 4 4 5 5 - i 170

IR LED 940 nm

Contextual Info: S ILICON SENSORS il INC Ï Ë Ï 8 2 5 3 1 5 3 0000211, 0 _ | ~ i LED Lamps SILICON SENSORS, INC. ~\ T -4 1 -1 1 -r+ H f.A ! 'f , 4 / . J 3 LIGHT EMITTING DIODE Infrared Absolute maximum ratings Type No. S IR D S IR D 1 ¿ S IR D 3 S IR D 4 S IR D 5 S IR D 6

Contextual Info: What HEW LETT milUMPACKARD High-Performance IR Em itter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Em itter Series HSDL-54xx IR D etector Series Technical Data Features Description • Subminiature Flat Top and Dom e Package Size - 2x2 mm

KSD303

Abstract: 3A40 SDB30A40 KSD-3034-000 ksd+150+full+safe
Contextual Info: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10uA Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit :

Contextual Info: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10uA Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit : mm

Contextual Info: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10 ㎂ Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit : mm

Contextual Info: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR IR=10uA Typ Ordering Information Type No. SDB10A40 Marking Package Code 1A40 SOD-106 Outline Dimensions unit : mm 1.6

KSD303

Abstract: KSD-3031-000 10A40 silicon controlled rectified SDB10A40
Contextual Info: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR IR=10uA Typ Ordering Information Type No. Marking SDB10A40 10A40 Package Code SOD-106 Outline Dimensions unit : mm 1.6

Contextual Info: SB 1060 SCHOTTKY DIE SPECIFICATION General Description: 60 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) IFAV Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: Data Sheet IR-500 Infrared Thermometer / Voltage Detector / Flashlight A must have tool for everyday applications, the Amprobe IR-500 verifies temperature as well as voltage presence and can be use as a flashlight. 8:1 distance to spot ratio IR temperature measurement with laser pointer

SDL-4420

Contextual Info: Thp\ mHEM HEWLETT PACKARD High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Technical Data Features • Subm iniature Flat Top and D om e Package Size - 2x2 iran • IR E m itter 875 nm TS AIGaAs Intensity -1 7 mW/sr Speed - 40 ns

Contextual Info: Infrared LED Product No: M T51060-IR Peak Emission Wavelength: 1060nm The MT51060-IR is an infrared T 1 3/4, 5mm water clear LED designed for applications requiring high power and high speed packaged with the lens optimized to produce a narrow viewing angle.

D207

Abstract: 838 ir ir 838 7105 st 439 TSSOP8 Package
Contextual Info: IRF7701 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: 310 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: + 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

Contextual Info: Lattica ispLSI and pLSI 2096 I Semiconductor I Corporation High Density Programmable Logic Functional Block Diagram Features • HIGH DENSITY PROGRAMMABLE LOGIC m r ^ ir m ir m ir m O u tp u t R o u tin g P o ol O R P — — — — — 4000 PLD Gates

IR3F01

Abstract: 3F01N IR3F SHARP IC ir3f01n TIC 106 n
Contextual Info: Low P o w er D ual O p e ra tio n a l A m p lifie r IR 3 F 0 1 /IR 3 F 0 1 N IR3F01/IR3F01N • D e s c rip tio n « T rDual0perational ■ T he IR 3F01/IR 3F01N is a high performance low p o w er dual operational am plifier, w hich o p e r a tes from a signal pow er supply over a wide range of vol­

S1226-8BK

Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region quartz glass type Optical measurement equipment, etc.

Z5667

Abstract: osram ostar led driver UM10204 SFH 7773
Contextual Info: Umgebungslicht- und Näherungssensor mit IR Emitter Ambient Light and Proximity Sensor with Integrated IR Emitter Lead Pb Free Product - RoHS Compliant SFH 7773 Preliminary datasheet Wesentliche Merkmale Features • Näherungssensor- Detektionsbereich bis

SFH 7773

Contextual Info: Umgebungslicht- und Näherungssensor mit IR Emitter Ambient Light and Proximity Sensor with Integrated IR Emitter Lead Pb Free Product - RoHS Compliant SFH 7773 Preliminary datasheet Wesentliche Merkmale Features • Näherungssensor- Detektionsbereich bis

proximity sensor block diagram

Abstract: ultrasonic sensor 8 pin UM10204 SFH 7773
Contextual Info: Umgebungslicht- und Näherungssensor mit IR Emitter Ambient Light and Proximity Sensor with Integrated IR Emitter Lead Pb Free Product - RoHS Compliant SFH 7773 Preliminary datasheet Wesentliche Merkmale Features • Näherungssensor- Detektionsbereich bis