S1226 Search Results

Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

S1226-18BU

Abstract: S1336-18BU
Contextual Info: PHOTODIODE Siフォトダイオード S1226-18BU, S1336-18BU 高出力紫外線モニタ用紫外~可視域精密測光用フォトダイオード S1226-18BU, S1336-18BUはUVガラス窓付TO-18パッケージを使用したSiフォトダイオードです。紫外∼近赤外域までに感度を有し、

S1226-8BK

Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region quartz glass type Optical measurement equipment, etc.

S1226-44BK

Abstract: S1226-18BK
Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications High UV sensitivity: QE=75 % λ=200 nm Analytical equipment Suppressed near IR sensitivity Optical measurement equipment, etc. Low dark current

Contextual Info: Siフォトダイオード S1226シリーズ 紫外～可視精密測光用近赤外感度抑制タイプの フォトダイオード 特長 用途 近赤外感度抑制タイプ 分析機器 紫外域高感度 石英ガラスタイプ 光計測機器

S1226-BQ

Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S1226-8BK

Abstract: S1226 S1226-18BK S1226-18BQ S1226-44BK S1226-44BQ S1226-5BK S1226-5BQ S1226-8BQ S1226-BQ
Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

hamamatsu S1336

Abstract: S1336-18BU uv photodiode UV photodiodes 254 S1226-18BU SE-171 KrF excimer
Contextual Info: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .

S1226-18BK

Abstract: 100-FA IR P 648 H S1226 S1226-18BQ S1226-44BK S1226-44BQ S1226-5BK S1226-5BQ S1226-8BK
Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

S1226-8BK

Abstract: S1226-8BK datasheet S1226-44BQ S1226 S1226-18BK S1226-18BQ S1226-44BK S1226-5BK S1226-5BQ S1226-8BQ
Contextual Info: PHOTODIODE Si photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l High reliability l Analytical equipment

APD InGaAs array

Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Contextual Info: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4

S1336-18BU

Abstract: S1226-18BU SE-171
Contextual Info: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .

Photodiode, TO-5,

Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
Contextual Info: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package

Contextual Info: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .

Contextual Info: Si Photodiodes with Pre-amp Type No. Active Area Feature mm S1406 Series 2.4 X S5590 2.4 X S5591 5.8 X Uses a photodiode chip of the S1226 or S1336 series and a borosilicate glass or quartz glass 2.4 window. Low noise operation suitable for precision measurement at low-light-level.

S1226-44BK

Abstract: S1226-BQ S1226-8BK S1226-8BQ S1226 S1226-18BK S1226-18BQ S1226-44BQ S1226-5BK S1226-5BQ
Contextual Info: PHOTODIODE Siフォトダイオード S1226シリーズ 紫外~可視精密測光用赤外感度抑制タイプのフォトダイオード 特長 用途 l 高紫外感度: QE 75 % λ=200 nm l 赤外感度抑制タイプ l 低暗電流 l 高信頼性

Contextual Info: 313-2SYGD/S530-E2 Li ming ± Soldering Temperature Tsol 260 5 Page: 2 of 6 ± X 234-15UYOC/S400-A7/S1226 313-2SYGD/S530-E2 MADE IN CHINA: Production Place EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C

S1337-33BR

Abstract: s4160 S3407 S1227-66BQ S5107 8S02
Contextual Info: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.

ir remote power meter

Abstract: visible light communication Photodiodes G1126-02
Contextual Info: Selection Guide Spectral Response Range nm 200 400 600 800 1000 1200 . Feature Major Application Type No. Listed Page S1336/S 1337 Series 16, 17 S1226/S 1227 Series 18, 19 S2386/S2387 Series

SQD90P04-9M4L

Contextual Info: SQD90P04-9m4L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0160 ID (A) • Package with Low Thermal Resistance

Contextual Info: SQ4050EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0080 RDS(on) () at VGS = 4.5 V 0.0110 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested

Contextual Info: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097