IR 1838 T TRANSISTOR Search Results

IR 1838 T TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

IR 1838 T TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IR 1838 Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250 Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing	Original	PD-95740 HFA16TB120PbF 260nC HFA16TB120 HFA06TB120 IR 1838 IRFP250 datasheet B120 HFA06TB120 IRFP250	PDF
transistor 2sk Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k	OCR Scan	2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796	PDF
IR 1838 T Abstract: B120 HFA06TB120 HFA16TB120 IRFP250 Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing	Original	PD-95740 HFA16TB120PbF 260nC HFA16TB120 12-Mar-07 IR 1838 T B120 HFA06TB120 IRFP250	PDF
C2335 Contextual Info: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode	OCR Scan	IRG4PH50UD O-247AC C2335	PDF
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing	Original	PD-95740 HFA16TB120PbF 260nC HFA16TB120 08-Mar-07	PDF
DS2003 Abstract: DS9667 ds2004 Contextual Info: DS2003/DS9667/DS2004 National Semiconductor & DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers General Description The DS2003/DS9667/DS2004 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To	OCR Scan	DS2003/DS9667/DS2004 DS2003/DS9667/DS2004 DS2003/DS9667 DS2004 TL/F/9647-16 TL/F/9647-17 DS2003 DS9667	PDF
vs 1838 b Abstract: 98-I Contextual Info: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies	OCR Scan	IRG4PF50WD O-247AC vs 1838 b 98-I	PDF
IR 1838 Abstract: irm 1838 HFA30PB120 Contextual Info: Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI	Original	HFA30PB120 490nC HFA30PB120 IR 1838 irm 1838	PDF
TL 1838 Abstract: IRG4PH50KD Contextual Info: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,	OCR Scan	IRG4PH50KD 10fis, TL 1838 IRG4PH50KD	PDF
IR 1838 3v Abstract: IR 1838 irm 1838 DIODE 76A HFA16TB120 Contextual Info: Preliminary Data Sheet PD -2.492 05/97 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI	Original	HFA16TB120 260nC HFA16TB120 IR 1838 3v IR 1838 irm 1838 DIODE 76A	PDF
2SC1811 Abstract: 2SA896 138D 2SA1015 Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	250nS 190nS 2SC1811 2SA896 138D 2SA1015	PDF
IR 1838 3v Abstract: IR 1838 HFA16PB120 CECC40101 Contextual Info: PD -2.364A HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching	Original	HFA16PB120 260nC HFA16PB120 IR 1838 3v IR 1838 CECC40101	PDF
C1030 transistor Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032 Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5\|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses	OCR Scan	IRGPH50KD2 -10jjs C-1035 O-247AC C-1036 C1030 transistor c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1032	PDF
Contextual Info: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,	OCR Scan	IRG4PH50UD 55M52 002023b	PDF

lt 332 diode Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE Contextual Info: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V	Original	IRG4ZH50KD SMD-10 lt 332 diode GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE	PDF
IR 1838 T Abstract: IR 1838 T transistor irm 1838 IR 1838 Contextual Info: Preliminary Data Sheet PD -2.492 05/97 International IO R Rectifier H F A 16T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche	OCR Scan	HFA16TB120 IR 1838 T IR 1838 T transistor irm 1838 IR 1838	PDF
transistor c429 Abstract: diode 47C hfa30pb120 Contextual Info: International lO R Rectifier HEXFRED Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions	OCR Scan	HFA30PB120 490nC HFA30PB120 transistor c429 diode 47C	PDF
IR 1838 T Abstract: 1838 t Contextual Info: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions	OCR Scan	HFA16TB120S 260nC HFA16TB120S IR 1838 T 1838 t	PDF
IR 1838 3v Abstract: IR 1838 HFA16TB120S Contextual Info: Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI	Original	HFA16TB120S 260nC HFA16TB120S IR 1838 3v IR 1838	PDF
TL 1838 Abstract: DS9668CN DS9666CN DS2002CJ DS9667 DS2001 DS2002 DS9666 J16A DS2002CN Contextual Info: DS2001/DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 High Current/Voltage Darlington Drivers General Description The DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature	OCR Scan	DS2001 /DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 /DS9665 DS2002/DS9666 DS2004/DS9668 TL/F/9647-4 TL 1838 DS9668CN DS9666CN DS2002CJ DS9667 DS2002 DS9666 J16A DS2002CN	PDF
IR 1838 T Abstract: IGBT W 20 NK 50 Z IRG4PH50UD Contextual Info: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter	Original	IRG4PH50UD O-247AC IR 1838 T IGBT W 20 NK 50 Z IRG4PH50UD	PDF
IRG4PH50UD Abstract: IR 1838 T Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter	Original	1573A IRG4PH50UD O-247AC IRG4PH50UD IR 1838 T	PDF
smd TRANSISTOR code marking 2F Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838 Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits	Original	PD-20605 HFA16TB120S 260nC HFA16TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838	PDF
IRG4PH50UD Abstract: IR 1838 T Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter	Original	1573A IRG4PH50UD O-247AC p52-7105 IRG4PH50UD IR 1838 T	PDF

IR 1838 T TRANSISTOR Search Results

IR 1838 T TRANSISTOR Result Highlights (5)

IR 1838 T TRANSISTOR Datasheets Context Search

IR 1838

transistor 2sk

IR 1838 T

C2335

DS2003

vs 1838 b

IR 1838

TL 1838

IR 1838 3v

2SC1811

IR 1838 3v

C1030 transistor

lt 332 diode

IR 1838 T

transistor c429

IR 1838 T

IR 1838 3v

TL 1838

IR 1838 T

IRG4PH50UD

smd TRANSISTOR code marking 2F

IRG4PH50UD